GT045N10M

GT045N10M N-Channel Enhancement Mode Power MOSFET Description The GT045N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) 100% Avalanche Tested < 100V 120A 4.5mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-263 Ordering Information Device Package Marking Packaging GT045N10M TO-263 GT045N10 800pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 100 V ID 120 A IDM 480 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 180 W EAS 240 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W Maximum Junction-to-Case RthJC 0.69 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1683-V1.0) GT045N10M Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- V IDSS VDS = 100V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 3 4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 30A -- 3.8 4.5 mΩ Forward Transconductance gFS VGS = 5V, ID = 30A -- 37 -- S -- 4284 -- -- 1321 -- -- 43 -- -- 60 -- -- 21 -- -- 11 -- -- 58 -- -- 13 -- -- 39 -- -- 8 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 50V, f = 1.0MHz VDD = 50V, ID = 30A, VGS = 10V VDD = 50V, ID = 30A, RG = 4.7Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 120 A Body Diode Voltage VSD TJ = 25ºC, ISD = 30A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 140 -- nC Reverse Recovery Time Trr IF = 30A, VGS = 0V di/dt=100A/us -- 60 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1683-V1.0) GT045N10M Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1683-V1.0) GT045N10M Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 4.5V 5.5V 100 ID, Drain Current (A) 120 10V VDS= 5V 4V ID, Drain Current (A) 120 Figure 2. Transfer Characteristics 80 60 3.5V 40 20 0 1 2 80 25℃ 60 40 20 VGS= 3.3V 0 100 3 0 4 0 VDS, Drain-to-Source Voltage (V) RDS(on),On-Resistance（mΩ） 7 6 5 VGS= 10V 2 1 0 10 20 30 40 50 8 10 10 60 ID-Drain Current（A） VDD = 50V ID = 30A 8 6 4 2 0 0 6 Figure 4. Gate Charge Vgs Gate-Source Voltage（V） Figure 3. Drain Source On Resistance 3 4 VGS, Gate-to-Source Voltage (V) 8 4 2 0 20 40 60 80 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Capacitance(pF) 5000 Is, Reverse Drain Current (A) 6000 Ciss 4000 3000 Coss 2000 1000 0 Crss 0 10 20 30 40 50 25℃ 60 VDS Drain-Source Voltage(V) www.gofordsemi.com 125℃ TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1683-V1.0) GT045N10M Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS = 10V, ID = 30A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 0.69°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1683-V1.0) GT045N10M TO-263 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1683-V1.0)