TSM60NC196CM2
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 28A, 196mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
● Super-Junction technology
PARAMETER
VALUE
UNIT
VDS
600
V
RDS(on) (max)
196
mΩ
Qg
39
nC
● High performance, small RDS(ON)*Qg figure of merit (FOM)
● High ruggedness performance
● 100% UIS & Rg tested
● High commutation performance
● ROHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Power Supply
● AC/DC LED Lighting
2
TO-263-2L (D PAK-2L)
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±20
V
28
A
18
A
IDM
84
A
PD
152
W
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
(Note 1)
ID
TC = 100°C
(Note 2)
Total Power Dissipation @ TC = 25°C
Single Pulse Avalanche Energy
(Note 3)
EAS
440
mJ
Single Pulse Avalanche Current
(Note 3)
IAS
4.2
A
TJ, TSTG
-55 to +150
°C
SYMBOL
MAXIMUM
UNIT
Junction to Case Thermal Resistance
RӨJC
0.82
°C/W
Junction to Ambient Thermal Resistance
RӨJA
40
°C/W
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while RӨCA is
determined by the user’s board design.
1
Version: C2209
TSM60NC196CM2
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mA
BVDSS
600
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 1mA
VGS(TH)
3
4.2
5
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
1
µA
RDS(on)
--
182
196
mΩ
Qg
--
39
--
Qgs
--
12
--
Qgd
--
17
--
Ciss
--
1566
--
Coss
--
46
--
Crss
--
11
--
Rg
--
2.3
4.6
td(on)
--
32
--
tr
--
31
--
td(off)
--
55
--
tf
--
11
--
Body-Diode Continuous Forward Current
IS
--
--
20
A
Body-Diode Pulsed Current
ISM
--
--
60
A
VSD
--
--
1.5
V
Drain-Source On-State Resistance
(Note 4)
Dynamic
VGS = 10V, ID = 9.5A
(Note 5)
Total Gate Charge
VDS = 300V, ID = 20A,
Gate-Source Charge
VGS = 10V
Gate-Drain Charge
Input Capacitance
VDS = 300V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
nC
pF
Ω
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
VDD = 300V, RG = 10Ω,
Turn-Off Delay Time
ID = 10A, VGS = 10V,
Turn-Off Fall Time
ns
Source-Drain Diode
Forward Voltage
(Note 4)
IS = 20A, VGS = 0V
Reverse Recovery Time
IS = 20A
trr
--
420
--
ns
Reverse Recovery Charge
dIF/dt = 100A/μs
Qrr
--
8.4
--
μC
Notes:
1.
Current limited by package.
2.
Pulse width limited by the maximum junction temperature.
3.
L = 50mH, IAS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
4.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
5.
For DESIGN AID ONLY, not subject to production testing.
6.
Switching time is essentially independent of operating temperature.
o
ORDERING INFORMATION
ORDERING CODE
TSM60NC196CM2 RNG
PACKAGE
PACKING
2
800pcs / 13” Reel
TO-263-2L (D PAK-2L )
2
Version: C2209
TSM60NC196CM2
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
20
20
ID, Drain Current (A)
ID, Drain Current (A)
VGS= 10V
VGS= 8V
15
VGS= 7V
VGS= 6.5V
10
VGS= 6V
5
0
10
150℃
-55℃
5
25℃
0
0
1
2
3
4
VDS, Drain to Source Voltage (V)
0
5
On-Resistance vs. Drain Current
VGS, Gate to Source Voltage (V)
0.3
0.2
0.1
VGS=10V
0
5
10
15
ID, Drain Current (A)
RDS(on), Drain-Source On-Resistance
(Normalized)
3
2.5
2
1.5
1
VGS=10V
ID=9.5A
0
-75 -50 -25
0
25
50
3
4
5
6
7
8
9
10
10
8
6
4
75 100 125 150 175
VDS=300V
ID=20A
2
0
0
20
On-Resistance vs. Junction Temperature
0.5
2
Gate-Source Voltage vs. Gate Charge
0.4
0
1
VGS, Gate to Source Voltage (V)
10
20
30
40
Qg, Gate Charge (nC)
RDS(on), Drain-Source On-Resistance (Ω)
RDS(on), Drain-Source On-Resistance (Ω)
15
TJ, Junction Temperature (°C)
On-Resistance vs. Gate-Source Voltage
0.4
0.3
0.2
0.1
ID=9.5A
0
6
7
8
9
10
VGS, Gate to Source Voltage (V)
3
Version: C2209
TSM60NC196CM2
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
BVDSS (Normalized)
Drain-Source Breakdown Voltage
10000
C, Capacitance (pF)
CISS
1000
100
COSS
10
CRSS
1
0
100
200
300
400
500
1.2
1.1
1
0.9
ID=1mA
0.8
-75 -50 -25
600
25
50
75 100 125 150 175
TJ, Junction Temperature (°C)
VDS, Drain to Source Voltage (V)
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
100
IS, Reverse Drain Current (A)
100
RDS(ON)=196mΩ
ID, Drain Current (A)
0
10
1
SINGLE PULSE
RӨJC=0.82°C/W
TC=25°C
10
150℃
-55℃
1
25℃
0.1
0.1
0.1
1
10
100
0.2
1000
VDS, Drain to Source Voltage (V)
0.4
0.6
0.8
1
1.2
VSD, Body Diode Forward Voltage (V)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case
10
SINGLE PULSE
RӨJC=0.82°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZNORMALIZED x RӨJC
0.01
0.1
1
t, Square Wave Pulse Duration (sec)
4
Version: C2209
TSM60NC196CM2
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-263
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
60NC196
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
5
Version: C2209
TSM60NC196CM2
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular
purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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6
Version: C2209
