GC11N65M

GC11N65M N-Channel Enhancement Mode Power MOSFET Description The GC11N65M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) 100% Avalanche Tested < 650V 11A 360mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-263 Ordering Information Device Package Marking Packaging GC11N65M TO-263 GC11N65 800pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 650 V ID 11 A IDM 44 A Gate-Source Voltage VGS ±30 V Power Dissipation PD 78 W EAS 211 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W Maximum Junction-to-Case RthJC 1.6 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1507-V1.1) GC11N65M Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 650 -- -- V IDSS VDS = 650V, VGS = 0V -- -- 1 μA IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 3.5 4.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5.5A -- 320 360 mΩ Forward Transconductance gFS VGS = 5V, ID = 5.5A -- 6 -- S -- 768 -- -- 19 -- -- 0.3 -- -- 21 -- -- 4.5 -- -- 7 -- -- 42 -- -- 20 -- -- 122 -- -- 6 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 325V, f = 1.0MHz VDD = 325V, ID = 5.5A, VGS = 10V VDD = 325V, ID = 5.5A, RG = 25Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 11 A Body Diode Voltage VSD TJ = 25ºC, ISD = 5.5A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 3 -- nC Reverse Recovery Time Trr IF = 5.5A, VGS = 0V di/dt=100A/us -- 280 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1507-V1.1) GC11N65M Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1507-V1.1) GC11N65M Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 6 6 10V ID, Drain Current (A) 5 ID, Drain Current (A) VDS= 5V 6V 5.5V 4 5.3v 3 5V 2 1 0 1 2 4 3 25℃ 2 1 VGS= 4.5V 0 5 3 0 4 0 VDS, Drain-to-Source Voltage (V) 2 RDS(on),On-Resistance（mΩ） 500 400 VGS= 10V 200 100 0 2 4 6 8 8 10 Figure 4. Gate Charge Vgs Gate-Source Voltage（V） Figure 3. Drain Source On Resistance 0 6 VGS, Gate-to-Source Voltage (V) 600 300 4 10 8 6 4 2 0 10 ID-Drain Current（A） VDD = 325V ID = 5.5A 0 5 10 15 20 25 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 7000 Capacitance(pF) 6000 5000 4000 3000 2000 Ciss 1000 0 Coss Crss 0 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1507-V1.1) GC11N65M Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS = 10V ID = 5.5A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 1.6°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1507-V1.1) GC11N65M TO-263 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1507-V1.1)