25P06

25P06 P-Channel Enhancement Mode Power MOSFET Description The 25P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) 100% Avalanche Tested -60V -25A < 32mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging 25P06 TO-252 25P06 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -25 A IDM -100 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 100 W EAS 110 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 40 ºC/W Maximum Junction-to-Case RthJC 1.25 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1302-V1.1) 25P06 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.4 -3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -12A -- 25 32 mΩ Forward Transconductance gFS VDS = -10V,ID = -12A -- 25 -- S -- 2527 -- -- 172 -- -- 147 -- -- 37 -- -- 10.3 -- -- 8.1 -- -- 15 -- -- 12 -- -- 38 -- -- 15 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -12A, VGS = -10V VDD = -30V, ID = -12A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -25 A Body Diode Voltage VSD TJ = 25ºC, ISD = -12A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 107 -- nC Reverse Recovery Time Trr -- 23 -- ns IF = -12A, VGS = 0V di/dt=-500A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1302-V1.1) 25P06 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1302-V1.1) 25P06 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 60 -10V VDS= -5V -4.5V -5.5V 50 -ID, Drain Current (A) -ID, Drain Current (A) 60 Figure 2. Transfer Characteristics -4V 40 30 -3.5V 20 VGS=-3.3V 10 0 50 40 30 25℃ 20 10 0 1 2 3 0 4 0 -VDS, Drain-to-Source Voltage (V) -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 50 40 VGS= -10V 20 10 4 8 12 16 20 8 10 10 24 -ID-Drain Current (A) VDD = -30V ID = -12A 8 6 4 2 0 0 6 Figure 4. Gate Charge 60 0 4 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 30 2 0 10 20 30 40 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Capacitance(pF) 3000 -Is, Reverse Drain Current (A) 3500 Ciss 2500 2000 1500 1000 Coss 500 0 Crss 0 10 20 30 40 50 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1302-V1.1) 25P06 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V ID = -12A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 1.25°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1302-V1.1) 25P06 TO-252 Package Information E c H D D1 L5 L3 b3 E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL mm MIN NOM MAX 2.30 2.40 A 2.20 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 2.90REF 0.51BSC L3 0.88 - 1.28 L4 0.50 - 1.00 L5 1.65 1.80 1.95 - 8° θ www.gofordsemi.com 0° TEL：0755-29961263 FAX:0755-29961466(A1302-V1.1)