GT650N15K

GOFORD GT650N15K N-Channel Enhancement Mode Power MOSFET Description The GT650N15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS 150V ID (at VGS = 10V) 20A RDS(ON) (at VGS = 10V) < 65mΩ 100% Avalanche Tested Schematic Diagram l RoHS Compliant Application l l l l l Synchronous Rectification in SMPS or LED Driver UPS Motor Control BMS High Frequency Circuit TO-252 Device Package Marking Packaging GT650N15K TO-252 GT650N15 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 150 V ID 20 A IDM 80 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 68 W EAS 65 mJ TJ, Tstg -55 To 175 ºC Symbol Value Unit RthJC 2.2 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Case www.gofordsemi.com (note3) TEL：0755-29961263 FAX:0755-29961466（A1549） GOFORD GT650N15K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 150 -- -- V IDSS VDS = 100V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 3.3 4.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 10A -- 59 65 mΩ Forward Transconductance gFS VDS=5V,ID=10A 15 -- -- S -- 600 -- -- 74.7 -- -- 10.8 -- -- 12 -- -- 5.7 -- -- 2.7 -- -- 9.5 -- -- 5.5 -- -- 12.5 -- -- 3 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 75V, f = 1.0MHz VDS = 75V, ID = 10A, VGS = 10V VDD=75V, RL=7.5Ω VGS=10V,RG=3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- 20 A VSD TJ = 25ºC, ISD = 10A, VGS = 0V -- -- 1.2 V -- 29 -- ns -- 130 -- nC Reverse Recovery Time trr Reverse Recovery Charge Qrr IF=IS,di/dt=100A/μs Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Surface Mounted on FR4 Board, t ≤ 10 sec www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1549） GOFORD GT650N15K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1549） GOFORD GT650N15K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Figure 1. Output Characteristics VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance VDS = 50V ID=14A RDS(on),On-Resistance（mΩ） Vgs Gate-Source Voltage（V） Figure 3. Gate Charge Qg Gate Charge（nC） ID-Drain Current（A） Capacitance(pF) Figure 5. Capacitance vs Vds Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1549） GOFORD GT650N15K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Safe Operation Area ID, Drain Current(A) Normalized On Resistance Figure 6. Normalized On Resistance Characteristics VDS, Drain-Source Voltage(V) Junction Temperature(°C) ZthJC, Thermal Impedance (ºC/W) Figure 8. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1549） GOFORD GT095N10K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com MIN. 2.2 0 0.97 0.68 5.2 0.43 5.98 6.4 4.63 9.4 1.38 0.88 0.5 1.65 0° Dimensions in Millimeters NOM. 2.3 　 1.07 0.78 5.33 0.53 6.1 5.30REF 6.6 　 2.286BSC 10.1 1.5 2.90REF 0.51BSC 　 　 1.8 　 TEL：0755-29961263 MAX. 2.4 0.2 1.17 0.9 5.5 0.63 6.22 6.8 　 10.5 1.75 1.28 1 1.95 8° FAX:0755-29961466