STD35NF06L

UMW R STD35NF06 60V N-Channel Enhancement Mode Power MOSFET General Description The STD35NF06 uses advanced trench technology and design to provide excellent R DS(ON) wi t h l ow ga t e c ha r g e. I t c a n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired Application Load Switch PWM Application Power management Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-ContinuousNote3 TC=25℃ TC=25 TC=100℃ Symbol Value Unit VDS 60 V VGS ±20 V 35 A 25 A ID Drain Current-Pulsed IDM 140 A Avalanche Energy EAS 72 mJ PD 105 W TSTG -55 to +150 ℃ TJ -55 to +150 ℃ Note1 Note4 Maximum Power Dissipation TC=25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Parameter Symbol Min. Typ. Max Unit RθJC - - 1.4 ℃/W Thermal Resistance,Junction-to-Case www.umw-ic.com 1 友台半导体有限公司 UMW R STD35NF06 60V N-Channel Enhancement Mode Power MOSFET Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250uA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1.0 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 2 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=30A - 12 20 mΩ VGS=4.5V,IDS=20A - 16 Conditions Min. Typ. Max. - 1300 - - 300 - - 105 - Min. Typ. Max. - 20 - - 50 - - 36 - - 15 - - 44.5 60 - 10.5 - - 17.5 - ON CHARACTERISTICS Parameter mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance CiSS Output Capacitance COSS Reverse Transfer Capacitance Crss VDS =25V, VGS = 0V, f=1MHz Unit pF SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Rise Time Symbol Td(on) tr Turn-Off Delay Time Fall Time Conditions VGS=10V,VDs=30V, RGEN=4.7Ω Td(off) ID=27.5A tf Total Gate Charge at 10V Qg Gate to Source Gate Charge Qgs Gate to Drain“Miller”Charge Qgd VDS=30V,IDS=55A, VGS=10V Unit ns nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit VSD VGS=0V,IDS=35A - - 1.5 V Reverse Recovery Time trr TJ=25℃,IF=25A - 75 - nS Reverse Recovery Charge Qrr di/dt=100A/us - 170 - uC Drain-Source Diode Forward Voltage Notes: 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: EAS condition: L=0.5mH,VDD=10V,VG=10V,VGATE=20V,Start TJ=25℃. www.umw-ic.com 2 友台半导体有限公司 UMW R STD35NF06 60V N-Channel Enhancement Mode Power MOSFET www.umw-ic.com 3 友台半导体有限公司 UMW R STD35NF06 60V N-Channel Enhancement Mode Power MOSFET www.umw-ic.com 4 友台半导体有限公司 UMW R STD35NF06 60V N-Channel Enhancement Mode Power MOSFET www.umw-ic.com 5 友台半导体有限公司 UMW R STD35NF06 60V N-Channel Enhancement Mode Power MOSFET Package Mechanical Data TO-252 E A B2 Dimensions C2 L V1 Ref. Millimeters H D Min. C B G V2 D1 V1 E1 A2 V1 L2 Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 5.30REF E 6.40 E1 4.63 0.248 0.209REF 6.80 0.252 0.268 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 7° V1 DETAIL A Inches Max. A2 D1 DETAIL A Typ. V2 0° 7° 6° 0° 6° Ordering information Order code UMW STD35NF06L www.umw-ic.com Package Baseqty Delivery mode TO-252 2500 Tape and reel 6 友台半导体有限公司