G20P06K

G20P06K P-Channel Enhancement Mode Power MOSFET Description The G20P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a widevariety of applications. General Features l l l l VDS -60V ID (at VGS = -10V) -20A RDS(ON) (at VGS = -10V) < 45mΩ 100% Avalanche Tested Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Device Package Marking Packaging G20P06K TO-252 G20P06 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -20 A IDM -60 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 90 W TJ, Tstg -55 To 150 ºC EAS 56 mJ Symbol Value Unit RthJC 1.4 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Single pulse avalanche energy (note3) Thermal Resistance Parameter Thermal Resistance, Junction-to-Case www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 G20P06K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 uA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.6 -3.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = - 12A -- 31 45 mΩ gFS VDS=10V,ID=-12A -- 25 -- S -- 3430 -- -- 391 -- -- 272 -- -- 46 -- -- 9.5 -- -- 10.5 -- -- 12 -- -- 15 -- -- 38 -- -- 15 -- Static Parameters Forward Transconductance Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -20A, VGS = -10V VDD = -30V, ID = -20A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -25 A Body Diode Voltage VSD TJ = 25ºC, ISD = -12A, VGS = 0V -- -- -1.2 V Reverse Recovery Time Trr IS = -12A, VGS = 0V di/dt=-100A/us -- 47 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 3. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 G20P06K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 G20P06K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics - ID, Drain Current (A) -ID, Drain Current (A) Figure 1. Output Characteristics -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance -Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） Figure 3. Gate Charge 50 40 30 20 10 Qg Gate Charge（nC） 0 5 10 15 20 25 -ID-Drain Current（A） Figure 6. Source-Drain Diode Forward Capacitance(pF) -Is, Reverse Drain Current (A) Figure 5. Capacitance -Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 G20P06K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 G20P06K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com MIN. 2.2 0 0.97 0.68 5.2 0.43 5.98 6.4 4.63 9.4 1.38 0.88 0.5 1.65 0° Dimensions in Millimeters NOM. 2.3 　 1.07 0.78 5.33 0.53 6.1 5.30REF 6.6 　 2.286BSC 10.1 1.5 2.90REF 0.51BSC 　 　 1.8 　 TEL：0755-29961263 MAX. 2.4 0.2 1.17 0.9 5.5 0.63 6.22 6.8 　 10.5 1.75 1.28 1 1.95 8° FAX:0755-29961466