MJD41C-QJ

MJD41C-Q 100 V, 6 A NPN high power bipolar transistor 17 May 2021 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD42C-Q 2. Features and benefits • • • • • • High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD41 series Low collector emitter saturation voltage Fast switching speeds Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • • • • • • Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 100 V VEBO emitter-base voltage open collector - - 6 V ICM peak collector current single pulse; tp ≤ 1 ms - - 10 A hFE DC current gain VCE = 4 V; IC = 0.3 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 30 - - VCE = 4 V; IC = 3 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 15 - - MJD41C-Q Nexperia 100 V, 6 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base 2 C collector 3 E emitter mb C mounting base; connected to collector Graphic symbol mb E B C; mb 2 1 aaa-029889 3 DPAK (SOT428C) 6. Ordering information Table 3. Ordering information Type number Package MJD41C-Q Name Description Version DPAK Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428C 7. Marking Table 4. Marking codes Type number Marking code MJD41C-Q MJD41CA 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC601134). Symbol Parameter Conditions Min Max Unit VCEO collector-emitter voltage open base - 100 V VEBO emitter-base voltage open collector - 6 V IC collector current - 6 A ICM peak collector current single pulse; tp ≤ 1 ms - 10 A Ptot total power dissipation Tmb ≤ 25 °C [1] - 15 W Tamb ≤ 25 °C [2] - 1.6 W Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Total power dissipation junction to mounting base. 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided 70 µm copper, tin-plated mounting pad for collector 1 cm . MJD41C-Q Product data sheet All information provided in this document is subject to legal disclaimers. 17 May 2021 © Nexperia B.V. 2021. All rights reserved 2 / 10 MJD41C-Q Nexperia 100 V, 6 A NPN high power bipolar transistor aaa-029909 2.0 Ptot (W) 1.5 1.0 0.5 0 -50 0 50 100 150 200 Tamb (°C) 2 FR4 PCB, single-sided 70 µm copper, tin-plated, mounting pad for collector 1 cm . Fig. 1. Power derating curves SOT428C 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-mb) thermal resistance from junction to mounting base [1] [1] Min Typ Max Unit - - 79 K/W - - 9 K/W 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided 70 µm copper, tin-plated mounting pad for collector 1 cm . 102 Zth(j-a) (K/W) 10 aaa-029910 duty cycle = 1 0.75 0.50 0.33 0.20 0.10 0.05 1 0.01 10-1 10-5 0.02 0 10-4 10-3 10-2 10-1 1 102 10 2 tp (s) 103 FR4 PCB, single-sided 70 µm copper, tin-plated, mounting pad for collector 1 cm . Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values MJD41C-Q Product data sheet All information provided in this document is subject to legal disclaimers. 17 May 2021 © Nexperia B.V. 2021. All rights reserved 3 / 10 MJD41C-Q Nexperia 100 V, 6 A NPN high power bipolar transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICES collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C current - - 1 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 1 µA hFE DC current gain VCE = 4 V; IC = 0.3 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 30 - - VCE = 4 V; IC = 3 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 15 - - VCEsat collector-emitter saturation voltage IC = 6 A; IB = 600 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - - 1.5 V VBE base-emitter voltage VCE = 4 V; IC = 6 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - - 2 V hfe small-signal current gain VCE = 10 V; IC = 500 mA; f = 1 kHz; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 20 - - fT transition frequency VCE = 10 V; IC = 500 mA; f = 100 MHz; Tamb = 25 °C 3 - - aaa-033340 400 hFE aaa-033341 6 IB (mA) = 240 200 IC (A) 300 MHz 160 120 100 80 (1) 4 60 (2) 200 40 20 2 (3) 100 0 10 10 102 103 IC (mA) VCE = 2 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3. 0 104 0 1 2 3 4 VCE (V) 5 Tamb = 25 °C Fig. 4. Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values MJD41C-Q Product data sheet All information provided in this document is subject to legal disclaimers. 17 May 2021 © Nexperia B.V. 2021. All rights reserved 4 / 10 MJD41C-Q Nexperia 100 V, 6 A NPN high power bipolar transistor aaa-033342 1.6 aaa-033343 1.6 VBE (V) VBEsat (V) 1.2 1.2 (1) (1) 0.8 0.8 (2) (2) (3) (3) 0.4 0 1 10 102 0.4 103 IC (mA) 0 104 VCE = 4 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig. 5. 1 102 10 103 IC (mA) 104 IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values Fig. 6. aaa-033344 10 Base-emitter saturation voltage as a function of collector current; typical values aaa-033345 2.0 VCEsat (V) VCEsat (V) 1.6 1 (1) (2) 1.2 (3) (1) (2) (3) 10-1 0.8 10-2 10-3 0.4 1 10 102 103 IC (mA) 0 10-3 104 IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 7. Product data sheet 10-1 IB (A) 1 Tamb = 25 °C (1) IC = 1 A (2) IC = 2.5 A (3) IC = 5 A Collector-emitter saturation voltage as a function of collector current; typical values MJD41C-Q 10-2 Fig. 8. Collector-emitter saturation region as a function of base current; typical values All information provided in this document is subject to legal disclaimers. 17 May 2021 © Nexperia B.V. 2021. All rights reserved 5 / 10 MJD41C-Q Nexperia 100 V, 6 A NPN high power bipolar transistor aaa-033346 103 C (pF) (1) 102 (2) 10 1 10-1 10-1 1 10 V (V) 102 Tamb = 25 °C (1) Ce (2) Cc Fig. 9. Input/output capacitance as a function of input/output voltage 11. Test information Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 6.73 6.47 2.38 2.22 10.40 9.60 2 1 3 Dimensions in mm 19-08-28 Fig. 10. Package outline DPAK (SOT428C) MJD41C-Q Product data sheet All information provided in this document is subject to legal disclaimers. 17 May 2021 © Nexperia B.V. 2021. All rights reserved 6 / 10 MJD41C-Q Nexperia 100 V, 6 A NPN high power bipolar transistor 13. Soldering Footprint information for reflow soldering of DPAK (SOT428C) package SOT428C 7 6.15 5.9 5.8 1.8 1 4.725 4.6 5.75 5.65 6.5 1.15 3.6 6 2.45 6 6.125 0.3 2.4 2.3 1.3 1.5 1.4 1.65 4.57 occupied area solder resist solder lands solder paste Dimensions in mm Issue date 19-09-06 sot428c_fr Fig. 11. Reflow soldering footprint for DPAK (SOT428C) MJD41C-Q Product data sheet All information provided in this document is subject to legal disclaimers. 17 May 2021 © Nexperia B.V. 2021. All rights reserved 7 / 10 MJD41C-Q Nexperia 100 V, 6 A NPN high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes MJD41C-Q v.1 Product data sheet - - MJD41C-Q Product data sheet 20210517 All information provided in this document is subject to legal disclaimers. 17 May 2021 © Nexperia B.V. 2021. All rights reserved 8 / 10 MJD41C-Q Nexperia 100 V, 6 A NPN high power bipolar transistor equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. 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In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or MJD41C-Q Product data sheet All information provided in this document is subject to legal disclaimers. 17 May 2021 © Nexperia B.V. 2021. All rights reserved 9 / 10 MJD41C-Q Nexperia 100 V, 6 A NPN high power bipolar transistor Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 3 10. Characteristics............................................................ 4 11. Test information.......................................................... 6 12. Package outline.......................................................... 6 13. Soldering..................................................................... 7 14. Revision history..........................................................8 15. Legal information........................................................9 © Nexperia B.V. 2021. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 17 May 2021 MJD41C-Q Product data sheet All information provided in this document is subject to legal disclaimers. 17 May 2021 © Nexperia B.V. 2021. All rights reserved 10 / 10