TSM230N06CP ROG

TSM230N06CP 60V N-Channel Power MOSFET TO-252 (DPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 60 V RDS(on) (max) VGS = 10V 23 VGS = 4.5V 28 Qg 28 nC Block Diagram Features ● ● mΩ 100% avalanche tested Fast Switching Ordering Information Ordering code Package Packing TSM230N06CP ROG TO-252 2.5kpcs / 13” Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V 50* A 32* A IDM 200 A EAS 42 mJ Power Dissipation @ TC = 25°C PD 53 W Operating Junction Temperature TJ 150 °C TSTG -55 to +150 °C Continuous Drain Current Pulsed Drain Current Tc = 25°C (Note 1) Tc = 100°C (Note 2) Single Pulse Avalanche Energy (Note 3) Storage Temperature Range ID Thermal Performance Parameter Symbol Limit Thermal Resistance - Junction to Case RӨJC 2 Thermal Resistance - Junction to Ambient RӨJA 62 1/6 Unit °C/W Version: D1802 TSM230N06CP 60V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 60 -- -- -- V 20 23 -- 23 28 1.2 1.8 2.5 -- -- 1 -- -- 10 IGSS -- -- ±100 nA gfs -- 9 -- S Qg -- 28 -- Qgs -- 3.5 -- Qgd -- 6.5 -- Ciss -- 1680 -- Coss -- 115 -- Crss -- 85 -- td(on) -- 7.2 -- VDD = 30V, ID = 1A, tr -- 38 -- VGS = 10V, RG = 6Ω td(off) -- 34 -- tf -- 8.2 -- IS -- -- 50 A ISM -- -- 200 A VGS = 0V, IS = 1A VSD -- -- 1 V VGS = 0V, IS = 1A trr -- 19.6 -- ns -- 14.2 -- nC Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 20A VGS = 4.5V, ID = 12A VDS = VGS, ID = 250µA Zero Gate Voltage Drain Current Gate Body Leakage VDS = 60V, VGS = 0V VDS = 48V, TJ = 125°C VGS = ±20V, VDS = 0V Forward Transconductance (Note 4) VDS = 10V, ID = 10A RDS(ON) VGS(TH) IDSS mΩ V µA Dynamic (Note 4,5) Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) (Note 4,5) Input Capacitance VDS = 30V, ID = 15A, VGS = 10V VDS = 25V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance f = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time (Note 4,5) Turn-Off Delay Time Turn-Off Fall Time (Note 4,5) (Note 4,5) (Note 4,5) ns Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode Maximum Pulse Drain-Source Diode in the MOSFET Forward Current Diode-Source Forward Voltage Reverse Recovery Time (Note 4) (Note4) dIF/dt = 100A/µs Reverse Recovery Charge Qrr Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. L = 0.1mH, IAS = 29A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 5. Switching time is essentially independent of operating temperature. 2/6 Version: D1802 TSM230N06CP 60V N-Channel Power MOSFET Electrical Characteristics Curve RDSON vs. Continuous Drain Current RDSON, On Resistance (m) ID, Continuous Drain Current (A) Continuous Drain Current vs. T C ID, Continuous Drain Current (A) TC, Case Temperature (°C) Gate Charge C, Capacitance (pF) VGS, Gate to Source Voltage (V) Capacitance Qg, Gate Charge (nC) VDS, Drain to Source Voltage (V) Threshold Voltage vs. Junction Temperature Normalized On Resistance Normalized Gate Threshold Voltage On-Resistance vs. Junction Temperature TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 3/6 Version: D1802 TSM230N06CP 60V N-Channel Power MOSFET Electrical Characteristics Curve Normalized Thermal Transient Impedance ID, Drain Current (A) Normalized Thermal Response Maximum Safe Operating Area Square Wave Pulse Duration (s) VDS, Drain to Source Voltage (V) 4/6 Version: D1802 TSM230N06CP 60V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters SUGGESTED PAD LAYOUT (Unit: Millimeters) Marking Diagram Y M 230N06 YML L = Year Code = Month Code O =Jan P =Feb S =May T =Jun W =Sep X =Oct = Lot Code (1~9, A~Z) Q =Mar U =Jul Y =Nov 5/6 R =Apr V =Aug Z =Dec Version: D1802 TSM230N06CP 60V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: D1802