DMZ6005EH

DMZ6005EH Depletion-Mode Power MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ➢ ESD improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available RDS(ON) (Max.) IDSS,min 600V 700 Ω 5mA SOT-23 D Drain Applications ➢ ➢ ➢ ➢ ➢ ➢ BVDSX Source Normally-on Switches SMPS Start-up Circuit Linear Amplifier Converters Constant Current Source Telecom G Gate S Ordering Information Part Number Package Marking Remark DMZ6005EH SOT-23 605E Halogen Free Absolute Maximum Ratings Symbol TA =25℃ unless otherwise specified Parameter DMZ6005EH Unit VDSX Drain-to-Source Voltage[1] 600 V VDGX Drain-to-Gate Voltage[1] 600 V ID Continuous Drain Current 0.02 IDM Pulsed Drain Current[2] 0.08 PD Power Dissipation 0.50 W VGS Gate-to-Source Voltage ±20 V TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ and TSTG Operating and Storage Temperature Range A ℃ -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1 /6 DMZ6005EH Unit 250 K/W Rev. 1.0 Dec. 2021 DMZ6005EH Electrical Characteristics OFF Characteristics Symbol BVDSX ID(OFF) IGSS TA =25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Unit Test Conditions 600 -- -- V VGS=-5V, ID=250µA -- -- 0.1 µA VDS=600V，VGS= -5V -- -- 10 µA VDS=600V，VGS= -5V TJ=125℃ -- -- 20 -- -- -20 Drain-to-Source Leakage Current Gate-to-Source Leakage Current ON Characteristics Symbol µA VGS=+20V, VDS=0V VGS=-20V, VDS=0V TA =25℃ unless otherwise specified Parameter Min. Typ. Max. Unit Test Conditions IDSS Saturated Drain-to-Source Current 5 -- 25 mA VGS=0V, VDS=25V RDS(ON) Static Drain-to-Source On-Resistance -- 500 700 Ω VGS=0V，ID=3mA [3] VGS(OFF) Gate-to-Source Cut-off Voltage -2.39 -- -1.96 V VDS =3V, ID=8µA gfs Forward Transconductance -- 15.4 -- mS VDS =10V, ID=5mA Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature Min. Typ. Max. CISS Input Capacitance -- 12.3 -- COSS Oput Capacitance -- 2.6 -- CRSS Reverse Transfer Capacitance -- 1.8 -- QG Total Gate Charge -- 1.55 -- QGS Gate-to-Source Charge -- 0.12 -- QGD Gate-to-Drain (Miller) Charge -- 0.56 -- Min. Typ. Max. Turn-on Delay Time -- 4 -- Rise Time -- 9 -- Turn-off Delay Time -- 14 -- Fall Time -- 84 -- Resistive Switching Characteristics Symbol td(ON) trise td(OFF) tfall Parameter ARK Microelectronics Co., Ltd. Unit Test Conditions pF VGS=-5V VDS=25V f=1.0MHZ nC VGS=-5V~5V VDS=300V, ID=7mA Essentially independent of operating temperature www.ark-micro.com 2 /6 Unit Test Conditions ns VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 Ω Rev. 1.0 Dec. 2021 DMZ6005EH Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA =25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- 1.2 V ISD =3.0 mA, VGS = -10 V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs;duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3 /6 Rev. 1.0 Dec. 2021 DMZ6005EH Figure 1. Maximum Power Dissipation vs. Case Temperature 25.0 0.5 20.0 0.4 ID, Drain Current (mA) PD, Power Dissipation (W) 0.6 Figure 2. Maximum Continuous Drain Current vs Case Temperature 0.3 0.2 0.1 15.0 10.0 5.0 0.0 0 25 50 75 100 125 25 150 50 TC, Case Temperature (℃) VGS=1V VGS=10V VGS=-0.5V 30 20 10 0 0 20 40 60 80 100 VDS = 3V 6 5 4 3 2 1 0 -2 -1.5 VDS, Drain-to-Source Voltage(V) 5 VGS. Gate-to-Source Voltage(V) 16 C,Capacitance(pF) 14 CISS 12 10 8 6 4 COSS CRSS 2 0 0 10 20 30 -0.5 0 0.5 1 40 Figure 6. Typical Gate Charge vs. Gate-toSource Voltage 4 3 2 1 0 -1 -2 -3 -4 -5 0 0.2 0.4 0.6 0.8 VDS,Drain Voltage(V) ARK Microelectronics Co., Ltd. -1 VGS, Gate-to-Source Voltage,(V) Figure 5. Typical Capacitance vs. Drain-toSource Voltage 18 150 Figure 4. Typical Transfer Characteristics ID, Drain-to-Source Current (mA) ID, Drain Current(mA) 40 125 7 VGS=0.5V VGS=0.2V VGS=0.1V VGS=-0.1V VGS=-0.2V 50 100 TC, Case Temperature (℃) Figure 3. Typical Output Characteristics 60 75 1 1.2 1.4 1.6 1.8 2 QG, Gate Charge(nC) www.ark-micro.com 4 /6 Rev. 1.0 Dec. 2021 DMZ6005EH Package Dimensions ARK Microelectronics Co., Ltd. www.ark-micro.com 5 /6 Rev. 1.0 Dec. 2021 DMZ6005EH Published by ARK Microelectronics Co., Ltd. ADD: D26,UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan. All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd’s terms and conditions supplied at the time of order acknowledgement. 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As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructionsfor used provided in the labeling, can be reasonably expected to result in significantinjury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 6 /6 Rev. 1.0 Dec. 2021