FTE02P15G

FTE02P15G/FTP02P15G 150V P-Channel Enhancement Mode MOSFET General Features ➢ ➢ ➢ ➢ ➢ High Dense Cell Design for Low RDS(ON) Rugged Polysilicon Gate Cell Structure RoHS Compliant Halogen-free Available 100% Avalanche Tested Part Number BVDSX RDS(ON) (Typ.) ID FTE02P15G -150V 0.20 Ω -2.3A FTP02P15G -150V 0.20 Ω -15A SOP-8 TO-220AB D Applications ➢ ➢ Reset Switch for Active Clamp Reset DC-DC Converters S S G D S D D D D D G S G S Ordering Information Part Number Package Marking Remark FTE02P15G SOP-8 02P15 Halogen Free FTP02P15G TO-220AB 02P15 Halogen Free Absolute Maximum Ratings Symbol TA =25℃ unless otherwise Parameter FTE02P15G FTP02P15G Unit VDSX Drain-to-Source Voltage[1] -150 -150 V VDGX Drain-to-Gate Voltage[1] -150 -150 V Continuous Drain Current -2.3 -15 -9.2 -60 Power Dissipation 2.5 100 W Derating Factor above 25℃ 0.02 0.8 W/℃ ID IDM PD Pulsed Drain Current[2] A VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy[3] 200 mJ IAR Avalanche Current[2] -4.0 A TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ and TSTG ℃ Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter FTE02P15G FTP02P15G Unit 50 1.25 ℃/W Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1 /7 Rev. 1.0 Aug. 2022 FTE02P15G/FTP02P15G Electrical Characteristics OFF Characteristics Symbol BVDSX TA =25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current Min. Typ. Max. Unit Test Conditions -150 -- -- V VGS=0V, IDS=-250µA -- -- -1 µA VDS=-150V，VGS=0V -- -- 100 -- -- -100 ON Characteristics Symbol Parameter Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance Min. Typ. Max. Unit Test Conditions -- 0.20 0.30 Ω VGS=-10V，IDS=-1.3A [4] -1.8 -- -4.0 V VGD=0V, IDS=-250µA -- 4.5 -- S VDS=-50V, IDS=-1.3A Min. Typ. Max. Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature Ciss Input Capacitance -- 1420 -- Coss Output Capacitance -- 180.5 -- Crss Reverse Transfer Capacitance -- 38.4 -- Qg Total Gate Charge -- 35.1 -- Qgs Gate-to-Source Charge -- 9.6 -- Qgd Gate-to-Drain (Miller) Charge -- 13.8 -- Resistive Switching Characteristics Symbol Parameter Unit Test Conditions pF VGS=0V VDS=-25V f=1.0MHZ nC VDS=-120V ID=-1.3A VGS=-10V Essentially independent of operating temperature Min. Typ. Max. td(on) Turn-on Delay Time -- 16.5 -- trise Rise Time -- 14.6 -- td(off) Turn-off Delay Time -- 35.0 -- Fall Time -- 24.6 -- tfall Unit Test Conditions ns VGS=-10V VDD=-75V RG=6.5Ω ID=-1.3A Source-Drain Diode Characteristics Symbol VSD VGS=-20V, VDS=0V TA =25℃ unless otherwise specified RDS(ON) gfs VGS=+20V, VDS=0V nA Parameter Diode Forward Voltage TA =25℃ unless otherwise specified Min Typ. Max. Unit Test Conditions -- -- 1.5 V ISD=1.3A, VGS=0V NOTE： [1] TJ=+25℃ to +150℃. [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] L=25mH,RG=25Ω,IAS=-4.0A,Starting TJ=25°C. [4] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 2 /7 Rev. 1.0 Aug. 2022 FTE02P15G/FTP02P15G Typical Characteristics Figure 1. Maximum Power Dissipation vs. Case Temperature Figure 2. Maximum Power Dissipation vs. Case Temperature 120 PD，Power Dissipation（W） PD，Power Dissipation（W） 3 2.5 2 FTE02P15G 1.5 1 0.5 100 80 FTP02P15G 60 40 20 0 0 25 50 75 100 125 25 150 50 75 100 125 TC，Case Temperature(℃) TC，Case Temperature(℃) Figure 3. Maximum Continuous Drain Current vs. Case Temperature Figure 4. Maximum ContinuousDrain Current vs Case Temperature 2.4 16 14 2 -ID，Drain Current(A) -ID，Drain Current(A) 150 FTE02P15G 1.6 1.2 0.8 FTP02P15G 12 10 8 6 4 0.4 2 0 0 25 50 75 100 125 150 25 50 75 100 125 TC，Case Temperature(℃) TC，Case Temperature(℃) Figure 6. Typical Transfer Characteristics 22 20 VGS=-15V VGS=-12V VGS=-10V VGS=-8V VGS=-7V VGS=-5V 20 18 16 14 -ID，Dranin-to-Source Current(A) -ID，Dranin-to-Source Current(A） Figure 5.Typical Output Characteristics 150 12 10 8 6 4 VDS=-5V =5V 18 16 14 12 10 8 6 4 2 2 0 0 0 1 2 3 4 5 6 7 8 9 0 10 1 VDS，Drain Voltage(V) ARK Microelectronics Co., Ltd. www.ark-micro.com 3 /7 2 3 4 5 6 7 8 9 VGS，Gate-to-Source Voltage(V) 10 Rev. 1.0 Aug. 2022 FTE02P15G/FTP02P15G Figure 8. Typical Gate Charge vs. Gate-to-Source Voltage Figure 7. Typical Capacitance vs. Drain-to-Source Voltage 10 -VGS，Gate-to-Source Voltage（V） 2500 C，Capacitance(pF) 2000 CISS 1500 1000 500 COSS CRSS 9 8 7 6 5 4 3 2 1 0 0 0 4 8 12 16 20 24 0 28 4 8 12 16 20 24 28 QG，Gate Charge（nC） -ID，Dranin-to-Source Current(A） Figure 9. Maximum Rated Safe Operating Area 100 FTP02P15G 10 1 FTE02P15G 0.1 0.01 0.001 0.1 1 10 VDS，Drain Voltage(V) RDS(ON)，Drain-to-Source Resistance (Ω) VDS，Drain Voltage(V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 100 ID，Dranin-to-Source Current(A) Figure 12. Gate Threshold Voltage vs. Junction Temperature ID=-1.3A 1.8 1.6 1.4 1.2 1 0.8 0.6 1.2 1.1 （Normalized） VGS(th) ，Gate Threshold Voltage 2.2 （Normalized） RDS(ON)，Drain-to-Source Resistance 36 Figure 10. Drain-to-Source On-Resistance vs. Drain Current Figure 11. Drain-to-Source On-Resistance vs. Junction Temperature 2 32 1 0.9 0.8 0.7 0.6 0.4 -50 -25 0 25 50 75 100 125 -50 150 0 25 50 75 100 125 150 TJ，Junction Temperature(℃) TJ，Junction Temperature(℃) ARK Microelectronics Co., Ltd. -25 www.ark-micro.com 4 /7 Rev. 1.0 Aug. 2022 FTE02P15G/FTP02P15G Package Dimensions SOP-8 SYMBOM MIN NOM MAX A 1.40 1.60 1.80 A1 0.05 0.15 0.25 A2 1.35 1.45 1.55 b 0.30 0.40 0.50 c 0.153 0.203 0.253 D 4.80 4.90 5.00 E 3.80 3.90 4.00 E1 5.80 6.00 6.20 L 0.45 0.70 1.00 θ 2° 4° 6° ARK Microelectronics Co., Ltd. L1 1.04 REF e 1.27 BSC R1 0.07 TYP R2 0.07 TYP www.ark-micro.com 5 /7 Rev. 1.0 Aug. 2022 FTE02P15G/FTP02P15G TO-220AB SYMBOM MIN NOM MAX A 4.30 4.50 4.70 b 0.70 0.80 0.90 b1 -- -- 1.42 b2 1.17 1.27 1.37 c 0.40 0.50 0.60 c1 1.25 1.30 1.35 c2 2.20 2.40 2.60 D 15.45 15.65 15.85 D1 13.20 13.40 13.60 E 9.80 10.0 10.2 E1 8.60 8.70 8.80 E2 7.80 8.00 8.20 e1 4.88 5.08 5.28 L 12.95 13.15 13.35 L1 2.70 2.80 2.90 L2 2.40 2.50 2.60 L3 6.30 6.50 6.70 θ1 3.50 3.60 3.70 θ2 1.35 1.50 1.65 e ARK Microelectronics Co., Ltd. 2.54 BSC www.ark-micro.com 6 /7 Rev. 1.0 Aug. 2022 FTE02P15G/FTP02P15G Published by ARK Microelectronics Co., Ltd. ADD: D26,UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan. All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd’s terms and conditions supplied at the time of order acknowledgement. ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessary performed. ARK Microelectronics Co., Ltd. does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using ARK Microelectronics Co., Ltd’s components. To minimize risk, customers must provide adequate design and operating safeguards. ARK Microelectronics Co., Ltd. does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in ARK Microelectronics Co., Ltd’s data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for such altered documentation. Resale of ARK Microelectronics Co., Ltd’s products with statements different from or beyond the parameters stated by ARK Microelectronics Co., Ltd. for the product or service voids all express or implied warrantees for the associated ARK Microelectronics Co., Ltd’s product or service and is unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for any such statements. Life Support Policy: ARK Microelectronics Co., Ltd’s products are not authorized for use as critical components in life devices or systems without the expressed written approval of ARK Microelectronics Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructionsfor used provided in the labeling, can be reasonably expected to result in significantinjury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 7 /7 Rev. 1.0 Aug. 2022