FTS10N15G

FTS10N15G 150V N-Channel Enhancement Mode MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ESD Improved Capability Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free Available BVDSX RDS(ON) (Typ.) ID 150V 5Ω 0.35A SOT-223 ➢ ➢ ➢ D D Applications G Relay Driver High Speed Line Driver Logic Level Translator G D S S Ordering Information Part Number Package Marking Remark FTS10N15G SOT-223 10N15G Halogen Free Absolute Maximum Ratings Symbol TA =25℃ unless otherwise specified Parameter FTS10N15G Unit VDSX Drain-to-Source Voltage[1] 150 V VDGX Drain-to-Gate Voltage[1] 150 V ID Continuous Drain Current 0.35 IDM Pulsed Drain Current[2] 1.4 Power Dissipation 1.5 W 0.012 W/℃ PD Derating Factor above 25℃ A VGS Gate-to-Source Voltage ±20 V VESD(G-S) Gate-to-Source ESD IEC, C=150pF, R=330Ω 2500 V Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TL TJ and TSTG Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1 /7 FTS10N15G Unit 83.3 ℃/W Rev. 1.1 Apr. 2022 FTS10N15G Electrical Characteristics OFF Characteristics TA =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions BVDSX Drain-to-Source Breakdown Voltage 150 -- -- V VGS=0V, ID=250µA -- 0.15 -- V/℃ Reference to 25℃, ID=250µA -- -- 1 µA VDS=150V, VGS=0V -- -- 100 uA VDS=120V, VGS= 0V TJ=125℃ -- -- 10 -- -- -10 △BVDSS/ △TJ IDSS IGSS Breakdown Coefficient Voltage Temperature Drain-to-Source Leakage Current Gate-to-Source Leakage Current ON Characteristics µA VGS=+20V, VDS=0V VGS=-20V, VDS=0V TA =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions RDS(ON) Static Drain-to-Source On-Resistance -- 5 10 Ω VGS=10V, ID=250mA [3] VGS(th) Gate Threshold Voltage 1.5 -- 2.5 V VGD=0V, ID=250µA Forward Transconductance -- 360 -- mS VDS=5V, ID=175mA[3] gfs Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature Min. Typ. Max. CISS Input Capacitance -- 32.8 -- COSS Output Capacitance -- 17.2 -- CRSS Reverse Transfer Capacitance -- 4.6 -- QG Total Gate Charge -- 1.2 -- QGS Gate-to-Source Charge -- 0.4 -- QGD Gate-to-Drain (Miller) Charge -- 0.7 -- Resistive Switching Characteristics Symbol Parameter Min. Typ. Max. Turn-on Delay Time -- 3.6 -- trise Rise Time -- 7.2 -- td(off) Turn-off Delay Time -- 16.0 -- Fall Time -- 36.8 -- ARK Microelectronics Co., Ltd. Test Conditions pF VGS=0V VDS=10V f=1.0MHZ nC VDS=60V ID=250mA VGS=5V Essentially independent of operating temperature td(on) tfall Unit www.ark-micro.com 2 /7 Unit Test Conditions ns VDD=50V RD=250 Ω RG=50 Ω VGS=10V Rev. 1.1 Apr. 2022 FTS10N15G Source-Drain Diode Characteristics Symbol TA =25℃ unless otherwise specified Parameter Min Typ. Max. Unit Test Conditions ISD=300mA, VGS=0V VSD Diode Forward Voltage -- -- 1.5 V ISD Continuous Source Current (Body Diode) -- -- 0.5 A ISM Maximum Pulsed Current (Body Diode) -- -- 2.0 A Integral P-N diode in MOSFET NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3 /7 Rev. 1.1 Apr. 2022 FTS10N15G Typical Characteristics Figure 2. Maximum Continuous Drain Current vs Case Temperature 1.6 0.5 ID，Drain Current(A) PD，Power Dissipation（W） Figure 1. Maximum Power Dissipation vs. Case Temperature 1.2 0.8 0.4 0.4 0.3 0.2 0.1 0 25 50 75 100 125 0 150 25 50 TC，Case Temperature(℃) ID，Dranin-to-Source Current(mA) VGS=10V 800 ID，Drain Current(mA) 125 150 1,000 900 700 VGS=5V 600 500 400 VGS=4V 300 200 100 VGS=3V 900 TA=25℃ 800 VDS=9V 700 600 500 VDS=3V 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 VDS，Drain-to-Source Voltage(V) 0 10 BVDSS，Drain-to-Source 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 1 10 1.20 1.15 1.10 1.05 1.00 0.95 0.90 -50 100 125 150 -25 0 25 50 75 100 125 150 Tj，Junction Temperature(℃) Tj，Junction Temperature(℃) ARK Microelectronics Co., Ltd. 2 3 4 5 6 7 8 9 VGS，Gate-to-Source Voltage(V) Figure 6. Typical Breakdown Voltage vs. Junction Temperature Figure 5. Typical Drain-to-Source On-Resistance vs. Junction Temperature 2.4 Breakdown Voltage（Normalized） 0 （Normalized） 100 Figure 4. Typical Transfer Characteristics Figure 3.Typical Output Characteristics 1,000 RDS(ON)，Drain-to-Source Resistance 75 TC，Case Temperature(℃) www.ark-micro.com 4 /7 Rev. 1.1 Apr. 2022 FTS10N15G Figure 8. Typical Capacitance vs. Drain-to-Source Voltage 50 1,000 45 40 800 C，Capacitance(pF) ISD，Reverse Drain Current（mA） Figure 7. Typical Body Diode Transfer Characteristics 150℃ 600 25℃ 400 200 CISS 35 30 25 20 COSS 15 10 CRSS 5 0 0 0.5 1 0 1.5 0 5 VSD，Source-to-Drain Voltage（V） 10 15 20 25 30 VDS，Drain Voltage(V) ID，Dranin-to-Source Current(A） Figure 9. Maximum Forward Safe Operating Area 1 0.1 0.01 0.001 1 ARK Microelectronics Co., Ltd. 10 VDS，Drain Voltage(V) 100 www.ark-micro.com 5 /7 Rev. 1.1 Apr. 2022 FTS10N15G Package Dimensions SOT-223 ARK Microelectronics Co., Ltd. www.ark-micro.com 6 /7 Rev. 1.1 Apr. 2022 FTS10N15G Published by ARK Microelectronics Co., Ltd. ADD: D26,UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan. All Rights Reserved. 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A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 7 /7 Rev. 1.1 Apr. 2022