FTS01N15G

FTS01N15G 150V N-Channel Enhancement Mode MOSFET General Features ➢ ➢ ➢ ➢ ➢ ESD improved capability High dense cell design for extremely low RDS(ON). Rugged polysilicon gate cell structure RoHS compliant Halogen-free available BVDSX RDS(ON) (Typ.) ID 150V 0.45 Ω 1.3A SOT-223 ➢ ➢ ➢ D D Applications G Relay driver High speed line driver Logic level translator G D S S Ordering Information Part Number Package Marking Remark FTS01N15G SOT-223 01N15G Halogen Free Absolute Maximum Ratings Symbol TA =25℃ unless otherwise specified Parameter FTS01N15G Unit VDSX Drain-to-Source Voltage[1] 150 V VDGX Drain-to-Gate Voltage[1] 150 V ID Continuous Drain Current 1.3 IDM Pulsed Drain Current[2] 5.2 Power Dissipation 1.5 W 0.012 W/℃ ±20 V PD VGS VESD TL TJ and TSTG Derating Factor above 25℃ Gate-to-Source Voltage Gate Source ESD[3] A 6000 Source to Gate ESD[3] 5000 Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 Operating and Storage Temperature Range V ℃ -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1 /7 FTS01N15G Unit 83.3 ℃/W Rev. 1.0 Feb. 2022 FTS01N15G Electrical Characteristics OFF Characteristics Symbol BVDSX TA =25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current Min. Typ. Max. Unit Test Conditions 150 -- -- V VGS=0V, ID=250µA -- -- 1 µA VDS=150V，VGS=0V -- -- 20 -- -- -20 ON Characteristics Symbol µA VGS=+20V, VDS=0V VGS=-20V, VDS=0V TA =25℃ unless otherwise specified Parameter Min. Typ. Max. Unit Test Conditions RDS(ON) Static Drain-to-Source On-Resistance -- 0.45 1 Ω VGS=5V，ID=1A [4] VGS(th) Gate Threshold Voltage 1.5 -- 2.5 V VGD=0V, ID=250µA Forward Transconductance -- 860 -- mS VDS=5V, ID=175mA gfs Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature Min. Typ. Max. CISS Input Capacitance -- 320.5 -- COSS Output Capacitance -- 120.5 -- CRSS Reverse Transfer Capacitance -- 27.4 -- QG Total Gate Charge -- 9.5 -- QGS Gate-to-Source Charge -- 2.1 -- QGD Gate-to-Drain (Miller) Charge -- 3.8 -- Resistive Switching Characteristics Symbol Parameter Min. Typ. Max. Turn-on Delay Time -- 6.5 -- trise Rise Time -- 5.8 -- td(off) Turn-off Delay Time -- 67.0 -- Fall Time -- 16.0 -- ARK Microelectronics Co., Ltd. Test Conditions pF VGS=0V VDS=10V f=1.0MHZ nC VDS=60V ID=1.8A VGS=5V Essentially independent of operating temperature td(on) tfall Unit www.ark-micro.com 2 /7 Unit Test Conditions ns VGS=10V VDD=50V RG=50 Ω RD=250 Ω Rev. 1.0 Feb. 2022 FTS01N15G Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA =25℃ unless otherwise specified Min Typ. Max. Unit Test Conditions -- -- 1.2 V ISD=1A[4], VGS=0V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] The test is based on JEDEC EIA/JESD22-A114 (HBM). [4] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3 /7 Rev. 1.0 Feb. 2022 FTS01N15G Typical Characteristics Figure 2. Maximum Continuous Drain Current vs. Case Temperature 1.6 1.4 ID，Drain Current(A) PD，Power Dissipation（W） Figure 1. Maximum Power Dissipation vs. Case Temperature 1.2 0.8 0.4 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 25 50 TC，Case Temperature(℃) Figure 3.Typical Output Characteristics ID，Dranin-to-Source Current(A) ID，Drain Current(A) VGS=4.5V 5 VGS=4V 4 VGS=3.5V 2 VGS=3V VGS=2V 0 0 2 VDS=3V 6 5 4 3 2 1 0 4 6 8 VDS，Drain Voltage(V) 0 10 1 Figure 5. Typical Capacitance vs. Drain-to-Source Voltage 2 3 4 5 6 7 8 9 VGS，Gate-to-Source Voltage(V) 10 Figure 6. Typical Gate Charge vs. Gate-to-Source Voltage 500 VGS，Gate-to-Source Voltage（V） 5 450 400 C，Capacitance(pF) 150 Figure 4. Typical Transfer Characteristics VGS=5V 1 125 7 7 3 100 TC，Case Temperature(℃) 8 6 75 350 CISS 300 250 200 150 100 COSS 50 CRSS 5 10 15 20 VDS，Drain Voltage(V) ARK Microelectronics Co., Ltd. 3 2 1 0 0 0 4 0 25 www.ark-micro.com 4 /7 2 4 6 QG，Gate Charge（nC） 8 10 Rev. 1.0 Feb. 2022 FTS01N15G Figure 8. Drain-to-Source On-Resistance vs. Drain Current 1.6 1.4 1 1.2 RDS(ON) (Ω) ID，Dranin-to-Source Current(A） Figure 7. Maximum Rated Safe Operating Area 10 0.1 0.01 1.0 0.8 0.6 0.4 0.2 0.001 0.0 1 10 VDS，Drain Voltage(V) 100 0 Figure 9. Drain-to-Source On-Resistance vs. Junction Temperature 2 3 4 5 6 7 8 ID，Dranin-to-Source Current(A) 9 10 Figure 10. Gate Threshold Voltage vs. Junction Temperature 2.4 1 2.2 VGS(th) (V) 0.8 RDS(ON) (Ω) 1 0.6 0.4 2 1.8 1.6 0.2 1.4 1.2 0 -50 0 50 100 Tj，Junction Temperature(℃) ARK Microelectronics Co., Ltd. -50 150 www.ark-micro.com 5 /7 0 50 100 Tj，Junction Temperature(℃) 150 Rev. 1.0 Feb. 2022 FTS01N15G Package Dimensions SOT-223 ARK Microelectronics Co., Ltd. www.ark-micro.com 6 /7 Rev. 1.0 Feb. 2022 FTS01N15G Published by ARK Microelectronics Co., Ltd. ADD: D26,UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan. All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. 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As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructionsfor used provided in the labeling, can be reasonably expected to result in significantinjury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 7 /7 Rev. 1.0 Feb. 2022