AKF30N10S

AKF30N10S 30V N-Channel Enhancement Mode MOSFET General Features       Low RDS(ON) Low Gate Charge Advanced high Cell density Trench Technology RoHS Compliant Halogen-free available 100% Avalanche Tested BVDSS RDS(ON) @VGS=10V RDS(ON) @VGS=4.5V 30V 7.3mΩ 9.0 mΩ ID 45A PDFN3333 Applications    D D Power Management in Inverter System Synchronous Rectification G Load Switch S S S G S Ordering Information Part Number Package Marking Remark AKF30N10S PDFN3333 30N10S Halogen Free Absolute Maximum Ratings Symbol TA=25°C unless otherwise specified Parameter Rating Unit VDSS Drain-Source Voltage[1] 30 V VGS Gate –Source Voltage ±20 V TC=25°C 45 A TC=100°C 28 A ID Continuous Drain Current IDP 300us Pulsed Drain Current Tested[2] 180 A Single Pulse Avalanche Energy[3] 25 mJ Power Dissipation 30 W 0.24 W/°C -55 ~ 150 °C EAS PD TJ and TSTG Derating Factor above 25°C Operating and Storage Temperature Range *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter Rating Unit RθJA Thermal Resistance, Junction-to-Ambient 34 °C /W RθJC Thermal Resistance, Junction-to-Case 4.2 °C /W ARK Microelectronics Co., Ltd. www.ark-micro.com 1/9 Rev. 2.0 Jan. 2020 AKF30N10S Electrical Characteristics OFF Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Min. Typ. Max. Unit Test Conditions BVDSS Drain-Source Breakdown Voltage 30 -- -- V VGS=0V, ID=250µA IDSS Zero Gate Voltage Drain Current -- -- 1 µA VDS=24V, VGS=0V -- -- 100 nA IGSS Gate Leakage Current VGS=20V, VDS=0V -- -- -100 nA VGS=-20V, VDS=0V Min. Typ. Max. Unit Test Conditions -- 7.3 9.3 mΩ VGS=10V, ID=15A -- 9.0 12 mΩ VGS=4.5V, ID=10A On Characteristics Symbol Parameter RDS(ON) Drain-Source On-Resistance[4] VGS(TH) Gate Threshold Voltage 1.0 1.4 2.0 V VDS = VGS, ID=250µA Forward Transconductance -- 47 -- S VDS=5V, ID=15A Min. Typ. Max. GFS Dynamic Characteristics Symbol Parameter Ciss Input Capacitance -- 1374 -- Coss Output Capacitance -- 165 -- Crss Reverse Transfer Capacitance -- 102 -- Qg Total Gate Charge -- 9.6 -- Qgs Gate-Source Charge -- 3.1 -- Qgd Gate-Drain Charge -- 3.3 -- Rg Gate Resistance -- 8 -- Min. Typ. Max. Turn-On Delay Time -- 23 -- Turn-On Rise Time -- 24 -- Unit Test Conditions pF VGS=0V,VDS=15V, f=1MHz nC VDS=15V,VGS=4.5V, ID=10A Ω f=1MHz Resistive Switch Characteristics Symbol td(on) tr td(off) tf Parameter Turn-Off Delay Time -- 185 -- Turn-Off Fall Time -- 71 -- ARK Microelectronics Co., Ltd. www.ark-micro.com 2/9 Unit Test Conditions ns VDD=15V ID=15A,VGS=10V RG=3.3Ω Rev. 2.0 Jan. 2020 AKF30N10S Source-Drain Diode Characteristics Symbol Parameter Min. Typ. Max. Unit -- -- 45 A -- -- 180 A Test Conditions ISM Continuous Source Current(Body Diode) Maximum Pulsed Current(Body Diode) VSD Diode Forward Voltage -- -- 1.2 V ISD=1A,VGS=0V trr Reverse Recovery Time -- 47 -- ns Qrr Reverse Recovery Charge -- 35 -- nC ISD=15A, dISD/dt=100A/µS ISD Integral P-N diode in MOSFET NOTE： [1] TJ=+25°C to +150°C [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] L=0.5mH, IAS=10A, Starting TJ=25°C. [4] Pulse width≤380µs;duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3/9 Rev. 2.0 Jan. 2020 AKF30N10S Typical Characteristics Figure 1. Typical Output Characteristics VGS=3.0~10V ID, Drain Current(A) 16 20 VGS=2.5V VGS=2.4V ID, Drain-to-Source Current (A) 20 Figure 2. Typical Transfer Characteristics VGS=2.3V 12 VGS=2.2V 8 VGS=2.0V 4 VGS=1.5V 0 0.0 16 12 25℃ 8 4 0 0.5 1.0 1.5 2.0 2.5 VDS, Drain-to-Source Voltage(V) 3.0 0 4 20 ISD, Reverse Drain Current(A) 1.6 RDS(ON), Drain-to-Source Resistance (Normalized) 1 2 3 VGS, Gate-to-Source Voltage,(V) Figure 4. Typical Body Diode Transfer Characteristics Figure 3. Typical Drain-to-Source On Resistance vs. Junction Temperature 1.4 VGS=10V 1.2 VGS=4.5V 1.0 16 125℃ 12 25℃ 8 4 0 0.8 0 25 50 75 100 125 150 TJ, Junction Temperature (℃) 0.0 175 0.2 0.4 0.6 0.8 VSD, Source-to-Drain Voltage(V) 1.0 Figure 6. Typical Gate Charge vs. Gate-toSource Voltage Figure 5. Typical Capacitance vs. Drain-toSource Voltage 10 VGS, Gate-to-Source Voltage(V) 10,000 Ciss C, Capacitance(pF) 125℃ 1,000 Coss 100 Crss 8 VDS=15V, IDS=10A 6 4 2 0 10 0 5 10 15 20 25 VDS, Drain Voltage(V) ARK Microelectronics Co., Ltd. 30 0 5 10 15 QG, Total Gate Charge(nC) www.ark-micro.com 4/9 20 25 Rev. 2.0 Jan. 2020 AKF30N10S Figure 7. Maximum Effective Thermal Impedance, Junction-to-Case 1 ZθJC, Thermal Impedance(Normalized) 50% 0.1 20% 10% 5% 2% 0.01 0.001 1E-06 1% single pulse 1E-05 0.0001 0.001 0.01 tP, Rectangular Pulse Duration(s) 0.1 1 10 Figure 8. Maximum Forward Safe Operation Area 1000 10µ s ID, Drain Current(A) 100 100µ s 10 1ms Operating in this area may be limited by RDS(ON) 1 10ms DC 0.1 0.1 ARK Microelectronics Co., Ltd. 1.0 10.0 VDS, Drain-to-Source Voltage(V) www.ark-micro.com 5/9 100.0 Rev. 2.0 Jan. 2020 AKF30N10S Test Circuit VDS ID ID VDS VGS Miller Region D.U.T VGS VDD VGS(TH) 1mA Qgs Qgd Qg Figure 9. Gate Charge Test Circuit Figure 10. Gate Charge Waveform RL VDS VGS D.U.T RG VDD Figure 11. Resistive Switching Test Circuit VDS 90% 10% VGS td(ON) trise td(OFF) tfall Figure 12. Resistive Switching Waveforms ARK Microelectronics Co., Ltd. www.ark-micro.com 6/9 Rev. 2.0 Jan. 2020 AKF30N10S Current Pump di/dt adj. ID Double Pluse di/dt = 100A/uA VDD D.U.T L Qrr ID trr Figure 13. Diode Reverse Recovery Test Circuit Figure 14. Diode Reverse Recovery Waveform BVDSS Series Switch (MOSFET) L IAS BVDSS D.U.T VDD Commutating Diode VGS 50Ω IAS VDD 0 VGS tAV tp 2 E AS  ID Figure 15. Unclamped Inductive Switching Test Circuit ARK Microelectronics Co., Ltd. I AS L 2 Figure 16. Unclamped Inductive Switching Waveforms www.ark-micro.com 7/9 Rev. 2.0 Jan. 2020 AKF30N10S Package Dimensions PDFN3333 ARK Microelectronics Co., Ltd. www.ark-micro.com 8/9 Rev. 2.0 Jan. 2020 AKF30N10S Published by ARK Microelectronics Co., Ltd. ADD: 4F, D26, UESTC National Science Park, No. 1 Shuangxing Avenue, Gongxing Street, Shuangliu District, Chengdu, China (Sichuan) Pilot Free Trade Zone. Tel：+86-28-8523-2215 Email: sales@ark-micro.com http://www.ark-micro.com All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd.’s terms and conditions supplied at the time of order acknowledgement. ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd deems necessary to support this warrantee. 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A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 9/9 Rev. 2.0 Jan. 2020