AKF20P45D

AKF20P45D Dual P-Channel 20V Enhancement Mode MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ Product Summary Fast Switching Speed Low On-Resistance Small Footprint Typical ESD Protection:2500V RoHS Compliant Halogen-free Available BVDSS -20V RDS(ON) (Max.) ID 35mΩ @VGS=-4.5V -4.5A 50mΩ @VGS=-2.5V -4.5A 100mΩ @VGS=-1.8V -4.5A 160mΩ @VGS=-1.5V -1.5A Applications ➢ ➢ Charger Switches and Load Switches for Portable Devices DC/DC Converters D2 D1 DFN2×2 S2 G2 D2 G1 S2 G2 S1 D2 D1 G1 S1 Ordering Information Part Number Package Marking Remark AKF20P45D DFN2*2 20P45 Halogen Free TA=25℃ unless otherwise specified Absolute Maximum Ratings Rating Unit Voltage[1] -20 V ID Continuous Drain Current -4.5 IDM Pulsed Drain Current[2] -15 PD Power Dissipation 7.8 W VGS Gate-to-Source Voltage ±8 V TL Soldering Temperature 260 Symbol VDSS TJ and TSTG Parameter Drain-to-Source A Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case ARK Microelectronics Co., Ltd. www.ark-micro.com 1 /7 Rating Unit 16 ℃/W Rev. 1.0 Jan. 2020 AKF20P45D Electrical Characteristics OFF Characteristics Symbol TA =25℃ unless otherwise specified Parameter BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Min. Typ. Max. Unit Test Conditions -20 -- -- V VGS=0V, ID=-250µA -- -- -1 µA VDS=-20V，VGS=0V -- -- -100 µA VDS=-20V，VGS=0V TJ=125℃ -- -- 15 Gate-to-Source Leakage Current -- -- -15 Electrical Characteristics ON Characteristics Symbol RDS(ON) VGS=+8V, VDS=0V µA VGS=-8V, VDS=0V TA =25℃ unless otherwise specified Parameter Min. Typ. Max. Unit Test Conditions -- 29 35 mΩ VGS=-4.5V, ID=-3.8A[3] -- 35 50 mΩ VGS=-2.5V, ID=-3.3A[3] -- 42 100 mΩ VGS=-1.8V, ID=-1A[3] -- 55 160 mΩ VGS=-1.5V, ID=-0.5A[3] -0.5 -- -1.0 V VGD=0V, ID=-250µA -- 23 -- S VDS=-10V, IDS=-3.8A[3] Static Drain-to-Source On-Resistance VGS(th) Gate-to-Source Threshold Voltage GFS Forward Transconductance Dynamic Characteristics Symbol Essentially independent of operating temperature Parameter Min. Typ. Max. QG Total Gate Charge -- 10 -- QGS Gate-to-Source Charge -- 1.5 -- QGD Gate-to-Drain (Miller) Charge -- 2.5 -- Resistive Switching Characteristics Symbol Parameter Test Conditions nC VGS=-4.5V VDS=-10V, ID=-4.9A Essentially independent of operating temperature Min. Typ. Max. td(ON) Turn-on Delay Time -- 18 -- trise Rise Time -- 20 -- td(OFF) Turn-off Delay Time -- 35 -- tfall Fall Time -- 12 -- ARK Microelectronics Co., Ltd. Unit www.ark-micro.com 2 /7 Unit Test Conditions ns VGS=-4.5V VDD=-10V, ID=-3.9A RG=1Ω Rev. 1.0 Jan. 2020 AKF20P45D TA=25℃ unless otherwise specified Source-Drain Diode Characteristics Symbol Parameter Min Typ. Max. Units Test Conditions ISD Continuous Source Current -4.5 A ISM Maximum Pulsed Current -15 A Integral P-N Diode in MOSFET VSD Diode Forward Voltage V ISD=-3.9A[3], VGS=0V -- -- -1.2 NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3 /7 Rev. 1.0 Jan. 2020 AKF20P45D Typical Characteristics Figure 1. Typical Transfer Characteristics ID, Drain-to-Source Current(A) ID, Drain-to-Source Current (A) Figure 2. Typical Output Characteristics 12 5 4 3 2 1 VGS=-1.7V 10 VGS=-2.0V VGS=-5.0V VGS=-1.5V 8 6 VGS=-1.3V 4 2 VGS=-1.0V 0 0 0 0.5 1 VGS, Gate-to-Source Voltage,(V) 1.5 0 Figure 3. Maximum Power Dissipation vs. Case Temperature 8 8.00 1 2 VDS, Drain-to-Source Voltage(V) 3 Figure 4. Maximum Continuous Drain Current vs Case Temperature 6 6.00 ID, Drain Current (A) PD, Power Dissipation (W) 7.00 4 2 5.00 4.00 3.00 2.00 1.00 0.00 0 25 50 75 100 125 TC, Case Temperature (℃) ARK Microelectronics Co., Ltd. 25 150 50 75 100 125 TC, Case Temperature (℃) www.ark-micro.com 4 /7 150 Rev. 1.0 Jan. 2020 AKF20P45D Figure 5. Maximum Effective Thermal Impedance, Junction-to-Ambient 1 ZθJA, Thermal Impedance(Normalized) 50% 0.1 20% 10% 5% 2% 0.01 1% single pulse 0.001 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tP, Rectangular Pulse Duration(s) Figure 6. Maximum Safe Operation Area ID, Drain Current(A) 100 10 100us 1ms 1 Operating in this area may be limited by RDS(ON) 10ms DC 0.1 0 ARK Microelectronics Co., Ltd. 1 10 VDS, Drain-to-Source Voltage(V) www.ark-micro.com 5 /7 100 Rev. 1.0 Jan. 2020 AKF20P45D Package Dimensions ARK Microelectronics Co., Ltd. www.ark-micro.com 6 /7 Rev. 1.0 Jan. 2020 AKF20P45D Published by ARK Microelectronics Co., Ltd. ADD: 4F, D26, UESTC National Science Park No. 1 Shuangxing Avenue, Gongxing Street, Shuangliu District, Chengdu, China (Sichuan) Pilot Free Trade Zone. Tel：+86-28-8523-2215 Email: sales@ark-micro.com http://www.ark-micro.com All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. 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As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 7 /7 Rev. 1.0 Jan. 2020