DMX4022E

DMX4022E/DMS4022E Depletion-Mode Power MOSFET eneral Features ➢ ➢ ➢ ➢ ➢ ➢ Depletion Mode (Normally On) Proprietary Advanced Planar Technology Small Package Low Leakage Current RoHS Compliant Halogen-free Available Part Number BVDSX RDS(ON) (Max.) ID DMX4022E 400V 25Ω 0.20A DMS4022E 400V 25Ω 0.24A Applications ➢ ➢ ➢ ➢ ➢ ➢ ➢ ➢ Transient Protect Start-up Converters Normally On Switches LED Drive Circuits Power Supplies Current Source Voltage Source Ordering Information Part Number Package Marking Remark DMX4022E SOT-89 4022 Halogen Free DMS4022E SOT-223 4022 Halogen Free Absolute Maximum Ratings Symbol TA=25℃unless otherwise specified Parameter DMX4022E [1] DMS4022E Unit VDSX Drain-to-Source Voltage 400 V VDGX Drain-to-Gate Voltage[1] 400 V ID Continuous Drain Current 0.20 0.24 IDM Pulsed Drain Current[2] 0.80 0.96 1 1.5 W 0.008 0.012 W/℃ PD VGS VESD TL TJ and TSTG Power Dissipation Derating Factor above 25℃ Gate-to-Source Voltage A ±20 V 3000 V Source to Gate ESD[3] 3000 V Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 Gate Source ESD [3] Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJC Parameter DMX4022E Thermal Resistance, Junction-to- Case ARK Microelectronics Co., Ltd. 125 www.ar k- micro.com 1/7 DMS4022E 83 Unit ℃/W Rev. 2.2 Au g . 2021 DMX4022E/DMS4022E Electrical Characteristics OFF Characteristics Symbol BVDSX TA =25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ID(OFF) Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current Min. Typ. Max. Unit Test Conditions 400 -- -- V VGS=-5V, ID=250µA -- -- 1 µA VDS=400V，VGS=-5V -- -- 1 mA VDS=400V，VGS=-5V TJ=125℃ -- -- 5 -- -- -5 ON Characteristics Symbol IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage gfs Forward Transconductance Min. Typ. Max. Unit Test Conditions 0.2 -- -- A VGS=0V, VDS=25V[4] -- 12 25 Ω VGS=0V，ID=200mA[4] -- 11 23 Ω VGS=10V，ID=200mA[4] -3.3 -- -1.5 V VDS=3V, ID=8µA -- 193 -- mS VDS=10V, ID=200mA[4] Dynamic Characteristics Parameter Essentially independent of operating temperature Min. Typ. Max. CISS Input Capacitance -- 103.2 COSS Output Capacitance -- 17.7 CRSS Reverse Transfer Capacitance -- 5.2 QG Total Gate Charge -- 359.6 ----- QGS Gate-to-Source Charge -- 61.6 -- QGD Gate-to-Drain (Miller) Charge -- 130 -- Resistive Switching Characteristics Symbol td(ON) trise td(OFF) tfall Parameter Unit Test Conditions pF VGS=-5V VDS=25V f=1.0MHZ nC VGS=-5V~5V VDD=100V, ID=200mA Essentially independent of operating temperature Min. Typ. Max. Turn-on Delay Time -- 6.6 -- Rise Time -- 9.2 -- Turn-off Delay Time -- 18.8 -- Fall Time -- 356 -- Unit Test Conditions ns VGS=-5V~5V VDD=100V, ID=200mA RG=10 Ω Source-Drain Diode Characteristics Symbol VSD VGS=-20V, VDS=0V TA =25℃ unless otherwise specified Parameter Symbol VGS=+20V, VDS=0V µA Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- 0.8 1.5 V ISD=200mA[4] ,VGS=-10V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3]The test is based on JEDEC EIA/JESD22-A114(HBM). [4] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ar k- micro.com 2/7 Rev. 2.2 Au g . 2021 DMX4022E/DMS4022E Typical Characteristics Figure 1. Maximum Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 3.Typical Output Characteristics Figure 4. Typical Transfer Characteristics Figure 5. Typical Capacitance vs. Drain-to-Source Voltage ARK Microelectronics Co., Ltd. Figure 6. Typical Gate Charge vs. Gate-to-Source Voltage www.ar k- micro.com 3/7 Rev. 2.2 Au g . 2021 DMX4022E/DMS4022E Figure 7. Maximum Rated Safe Operating Area Figure 9. Drain-to-Source On-Resistance vs. Junction Temperature ARK Microelectronics Co., Ltd. Figure 8. Drain-to-Source On-Resistance vs. Drain Current Figure 10. Gate-to-Source Cut-off Voltage vs. Junction Temperature www.ar k- micro.com 4/7 Rev. 2.2 Au g . 2021 DMX4022E/DMS4022E Package Dimensions SOT-89 ARK Microelectronics Co., Ltd. www.ar k- micro.com 5/7 Rev. 2.2 Au g . 2021 DMX4022E/DMS4022E SOT-223 ARK Microelectronics Co., Ltd. www.ar k- micro.com 6/7 Rev. 2.2 Au g . 2021 DMX4022E/DMS4022E Published by ARK Microelectronics Co., Ltd. ADD: 4F, D26, UESTC National Science Park No. 1 Shuangxing Avenue, Gongxing Street, Shuangliu District, Chengdu, China (Sichuan) Pilot Free Trade Zone. 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A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ar k- micro.com 7/7 Rev. 2.2 Au g . 2021