FTX30P35G

FTX30P35G 350V P-Channel Enhancement Mode MOSFET General Features      Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available BVDSS RDS(ON) (Max.) ID -350V 30 Ω -200mA SOT-89 D Applications    Drain High Efficiency SMPS Adaptor/Charger Active PFC G Gate Drain Source S Ordering Information Part Number Package Marking Remark FTX30P35G SOT-89 P35 Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter FTX30P35G Unit V VDSS Drain-to-Source Voltage[1] -350 ID Continuous Drain Current -0.2 [2] A IDM Pulsed Drain Current -0.6 PD Power Dissipation 1.0 W VGS Gate-to-Source Voltage ±20 V TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ and TSTG Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1/5 FTX30P35G Unit 125 K/W Rev. 2.0 Jan. 2020 FTX30P35G Electrical Characteristics OFF Characteristics Symbol TA =25℃ unless otherwise specified Parameter BVDSS Drain-to-Source Breakdown Voltage △BVDSS/△TJ Breakdown Voltage Temperature Coefficient IDSS IGSS Min. Typ. Max. Unit Test Conditions -350 -- -- V VGS=0V, ID=-250µA -- -0.35 -- V/℃ Reference to 25℃, ID=-250µA -- -- -1 µA VDS=-350V，VGS= 0V -- -- -100 µA -- -- 20 -- -- -20 Drain-to-Source Leakage Current Gate-to-Source Leakage Current ON Characteristics Symbol RDS(ON) Static Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Max. Unit Test Conditions -- 18 30 Ω VGS=-10V，ID=-200mA [3] -1 -- -3 V VGD =0V, ID=-250µA Parameter Essentially independent of operating temperature Min. Typ. Max. Input Capacitance -- 43.39 -- COSS Oput Capacitance -- 6.94 -- CRSS Reverse Transfer Capacitance -- 0.84 -- td(ON) Turn-on Delay Time -- 12 -- Rise Time -- 60 -- Turn-off Delay Time -- 136 -- Fall Time -- 320 -- tfall Source-Drain Diode Characteristics Symbol VSD VGS=-20V, VDS=0V Typ. CISS td(OFF) VGS=+20V, VDS=0V Min. Dynamic Characteristics trise TJ=125℃ TA =25℃ unless otherwise specified Parameter Symbol µA VDS=-350V，VGS= 0V Parameter Diode Forward Voltage Unit Test Conditions pF VGS=0V VDS=-25V f=1.0MHZ ns VGS = -10V~0V VDD = -25V, ID=-80mA RG = 25Ohm TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- -1.8 V ISD =-200 mA, VGS =0 V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 2/5 Rev. 2.0 Jan. 2020 FTX30P35G Typical Characteristics 1.2 Figure 1. Maximum Power Dissipation vs. Case Temperature 0.00 -0.05 ID, Drain Current (A) PD, Power Dissipation (W) 1 Figure 2. Maximum Continuous Drain Current vs Case Temperature 0.8 -0.10 0.6 -0.15 0.4 -0.20 0.2 -0.25 0 25 50 75 100 125 TC, Case Temperature (℃) 25 150 50 75 100 125 TC, Case Temperature (℃) 150 Figure 3. Typical Capacitance vs. Drain-toSource Voltage 100 C, Capacitance(pF) Ciss 10 1 Coss Crss 0 -400 -350 -300 -250 -200 -150 -100 -50 0 VDS, Drain Voltage(V) Switching Waveforms and Test Circuit RL VDS VGS VDS D.U.T RG 90% VDD 10% VGS td(ON) trise Figure 5. Resistive Switching Waveforms Figure 4. Resistive Switching Test Circuit ARK Microelectronics Co., Ltd. td(OFF) tfall www.ark-micro.com 3/5 Rev. 2.0 Jan. 2020 FTX30P35G Package Dimensions SOT-89 ARK Microelectronics Co., Ltd. www.ark-micro.com 4/5 Rev. 2.0 Jan. 2020 FTX30P35G Published by ARK Microelectronics Co., Ltd. ADD: 4F, D26, UESTC National Science Park No. 1 Shuangxing Avenue, Gongxing Street, Shuangliu District, Chengdu, China (Sichuan) Pilot Free Trade Zone. Tel：+86-28-8523-2215 Email: sales@ark-micro.com http://www.ark-micro.com All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd.’s terms and conditions supplied at the time of order acknowledgement. ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd deems necessary to support this warrantee. 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A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 5/5 Rev. 2.0 Jan. 2020