DMS6014E

DMS6014E Depletion-Mode Power MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ➢ ESD improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available BVDSX RDS(ON) (Max.) IDSS,min 600V 150 Ω 100mA SOT-223 Applications ➢ ➢ ➢ ➢ ➢ ➢ Normally-on Switches SMPS Start-up Circuit Linear Amplifier Converters Constant Current Source Telecom G D S Ordering Information Part Number Package Marking Remark DMS6014E SOT-223 6014 Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter DMS6014E Unit VDSX Drain-to-Source Voltage[1] 600 V VDGX Drain-to-Gate Voltage[1] 600 V ID Continuous Drain Current 0.08 IDM Pulsed Drain Current[2] 0.32 PD Power Dissipation 1.50 W VGS Gate-to-Source Voltage ±20 V TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ and TSTG Operating and Storage Temperature Range A ℃ -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1 /6 DMS6014E Unit 83 K/W Rev. 1.1 Aug. 2021 DMS6014E Electrical Characteristics OFF Characteristics Symbol BVDSX ID(OFF) IGSS TA =25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Unit Test Conditions 600 -- -- V VGS=-5V, ID=250µA -- -- 1 µA VDS=600V，VGS= -5V -- -- 100 µA VDS=600V，VGS= -5V TJ=125℃ -- -- 20 -- -- -20 Drain-to-Source Leakage Current Gate-to-Source Leakage Current ON Characteristics Symbol IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage gfs Forward Transconductance Typ. Max. Unit Test Conditions 100 -- -- mA VGS=0V, VDS=25V -- 110 150 Ω VGS=0V，ID=50mA [3] -3.3 -- -1.5 V VDS =3V, ID=8µA -- 77 -- mS VDS =10V, ID=5mA Parameter Essentially independent of operating temperature Min. Typ. Max. CISS Input Capacitance -- 62 -- COSS Oput Capacitance -- 13 -- CRSS Reverse Transfer Capacitance -- 9 -- QG Total Gate Charge -- 8 -- QGS Gate-to-Source Charge -- 0.6 -- QGD Gate-to-Drain (Miller) Charge -- 3 -- Resistive Switching Characteristics td(ON) trise td(OFF) tfall VGS=-20V, VDS=0V Min. Dynamic Characteristics Symbol VGS=+20V, VDS=0V TA =25℃ unless otherwise specified Parameter Symbol uA Parameter Test Conditions pF VGS=-5V VDS=25V f=1.0MHZ nC VGS=-5V~5V VDS=300V, ID=7mA Essentially independent of operating temperature Min. Typ. Max. Turn-on Delay Time -- 10 -- Rise Time -- 22 -- Turn-off Delay Time -- 35 -- Fall Time -- 210 -- ARK Microelectronics Co., Ltd. Unit www.ark-micro.com 2 /6 Unit Test Conditions ns VGS = -5V~5V VDD = 300V, ID=7mA RG = 20Ω Rev. 1.1 Aug. 2021 DMS6014E Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- 1.2 V ISD =100 mA, VGS = -10 V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3 /6 Rev. 1.1 Aug. 2021 DMS6014E Typical Characteristics Figure 2. Maximum Continuous Drain Current vs. Case Temperature 1.6 90 1.4 80 ID,Drain Current(mA) PD，Power Dissipation（W） Figure 1. Maximum Power Dissipation vs. Case Temperature 1.2 1 0.8 0.6 0.4 0.2 70 60 50 40 30 20 10 0 25 50 75 100 125 0 150 25 50 TC,Case Temperature(℃) ID,Drain Current(mA) 180 VGS=0.2V VGS=0.1V VGS=0V VGS=-0.1V 160 140 VGS=-0.2V 120 100 80 60 40 20 VDS=3V 30 25 20 15 10 5 0 -2.0 10 20 30 40 50 -1.5 60 Figure 5. Typical Capacitance vs. Drainto-Source Voltage VGS,Gate-to-Source Voltage(V) C,Capacitance(pF) 80 70 CISS 50 40 30 COSS 10 CRSS 0 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 5 4 3 2 1 0 -1 -2 -3 -4 -5 0 45 2 4 6 8 10 QG,Gate Charge(nC) VDS,Drain Voltage(V) ARK Microelectronics Co., Ltd. -0.5 Figure 6. Typical Gate Charge vs. Gateto-Source Voltage 90 20 -1.0 VGS,Gate-to-source Voltage(V) VDS,Drain-to-Source(V) 60 150 35 0 0 125 Figure 4. Typical Transfer Characteristics ID,Drain-to-Source Current(mA) VGS=0.5V VGS=0.4V VGS=0.3V 100 TC,Case Temperature(℃) Figure 3.Typical Output Characteristics 200 75 www.ark-micro.com 4 /6 Rev. 1.1 Aug. 2021 DMS6014E Package Dimensions SOT-223 ARK Microelectronics Co., Ltd. www.ark-micro.com 5 /6 Rev. 1.1 Aug. 2021 DMS6014E Published by ARK Microelectronics Co., Ltd. ADD: D26,UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan. All Rights Reserved. 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A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 6 /6 Rev. 1.1 Aug. 2021