DMZ1511E

DMZ1511E Depletion-Mode Power MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ➢ ESD improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available BVDSX RDS(ON) (Max.) IDSS,min 150V 25 Ω 100mA SOT-23 D Drain Applications ➢ ➢ ➢ ➢ ➢ ➢ ➢ Source G Synchronous Rectification Normally-on Switches Linear Amplifier High Voltage Regulator Constant Current Source Protection Circuits Telecom Gate S Ordering Information Part Number Package Marking Remark DMZ1511E SOT-23 1511 Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter DMZ1511E Unit VDSX Drain-to-Source Voltage[1] 150 V VDGX Drain-to-Gate Voltage[1] 150 V Continuous Drain Current 0.1 ID Current[2] A IDM Pulsed Drain PD Power Dissipation 0.50 W VGS Gate-to-Source Voltage ±20 V TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ and TSTG 0.4 Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1/6 DMZ1511E Unit 250 K/W Rev. 2.1 Aug. 2020 DMZ1511E Electrical Characteristics OFF Characteristics Symbol BVDSX ID(OFF) IGSS TA =25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Unit Test Conditions 150 -- -- V VGS=-5V, ID=250µA -- -- 10 µA VDS=150V，VGS=-5V -- -- 1.0 mA VDS=150V，VGS=-5V TJ=125℃ -- -- 20 -- -- -20 Drain-to-Source Leakage Current Gate-to-Source Leakage Current ON Characteristics Symbol IDSS Parameter Saturated Drain-to-Source Current Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage Forward Transconductance Parameter Typ. Max. Unit Test Conditions 100 -- -- mA VGS=0V, VDS=25V -- -- 25 Ω VGS=0V，ID=50mA[3] -3.3 -- -1.5 V VDS=3V, ID=8µA -- 0.24 -- S VDS=10V, ID=50mA Essentially independent of operating temperature Min. Typ. Max. CISS Input Capacitance -- 12.8 -- COSS Oput Capacitance -- 5.4 -- CRSS Reverse Transfer Capacitance -- 3.3 -- QG Total Gate Charge -- 3 -- QGS Gate-to-Source Charge -- 0.23 -- QGD Gate-to-Drain (Miller) Charge -- 1.1 -- Resistive Switching Characteristics Symbol td(ON) trise td(OFF) tfall VGS=-20V, VDS=0V Min. Dynamic Characteristics Symbol VGS=+20V, VDS=0V TA =25℃ unless otherwise specified RDS(ON) gfs µA Parameter Test Conditions pF VGS=-10V VDS=25V f=1.0MHZ nC VGS=-10V~0V VDS=75V, ID=100mA Essentially independent of operating temperature Min. Typ. Max. Turn-on Delay Time -- 7 -- Rise Time -- 16 -- Turn-off Delay Time -- 25 -- Fall Time -- 120 -- ARK Microelectronics Co., Ltd. Unit www.ar k-micro.com 2 /6 Unit Test Conditions ns VGS=-10V~0V VDD=75V, ID=100mA RG=20Ω Rev. 2.1 Aug. 2020 DMZ1511E Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- 1.2 V ISD=100mA, VGS=-5V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ar k-micro.com 3 /6 Rev. 2.1 Aug. 2020 DMZ1511E Typical Characteristics Figure 2. Maximum Continuous Drain Current vs Case Temperature 0.6 120 0.5 100 ID，Drain Current(mA) PD, Power Dissipation (W) Figure 1. Maximum Power Dissipation vs. Case Temperature 0.4 0.3 0.2 0.1 80 60 40 20 0 0 25 50 75 100 125 150 25 75 100 125 150 TC，Case Temperature(℃) TC, Case Temperature (℃) ARK Microelectronics Co., Ltd. 50 www.ar k-micro.com 4 /6 Rev. 2.1 Aug. 2020 DMZ1511E Package Dimensions ARK Microelectronics Co., Ltd. www.ar k-micro.com 5 /6 Rev. 2.1 Aug. 2020 DMZ1511E Published by ARK Microelectronics Co., Ltd. ADD: 4F,D26,UESTC National Science Park No. 1 Shuangxing Avenue, Gongxing Street , Shuangliu District, Chengdu, China (Sichuan) Pilot Free Trade Zone. 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A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ar k-micro.com 6 /6 Rev. 2.1 Aug. 2020