DMX1072

DMX1072/DMS1072 Depletion-Mode Power MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ➢ Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure ESD Improved Capability Fast Switching Speed RoHS Compliant Halogen-free Available BVDSX RDS(ON) (Max.) ID 100V 3.0Ω 0.3A Applications ➢ ➢ ➢ ➢ Suppressing Surge Current Normally-on Switches Constant Current Source Protection Circuits Ordering Information Part Number Package Marking Remark DMX1072 SOT-89 1072 Halogen Free DMS1072 SOT-223 1072 Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter DMX1072 DMS1072 Unit VDSX Drain-to-Source Voltage[1] 100 V VDGX Drain-to-Gate Voltage[1] 100 V ID Continuous Drain Current 0.3 IDM Pulsed Drain Current[2] 1.2 A Power Dissipation 1.0 1.5 W 0.008 0.012 W/℃ PD Derating Factor above 25℃ VGS Gate-to-Source Voltage ±20 V VESD(G-S) Gate Source ESD IEC, C=150pF, R=330Ω 1500 V Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TL TJ and TSTG Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJC Parameter DMX1072 DMS1072 Unit 125 83 K/W Thermal Resistance, Junction-to-Case ARK Microelectronics Co., Ltd. www.ark-micro.com 1 /7 Rev. 2.1 Aug. 2022 DMX1072/DMS1072 Electrical Characteristics OFF Characteristics Symbol BVDSX ID(OFF) IGSS TA =25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Unit Test Conditions 100 -- -- V VGS=-5V, ID=250µA -- -- 1 µA VDS=100V, VGS=-5V -- -- 1 mA VDS=100V, VGS=-5V TJ=125℃ -- -- 20 Drain-to-Source Leakage Current Gate-to-Source Leakage Current VGS=+20V, VDS=0V µA -- -- -20 VGS=-20V, VDS=0V ON Characteristics Symbol TA =25℃ unless otherwise specified Parameter IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage gfs Forward Transconductance Min. Typ. Max. Unit Test Conditions 0.3 -- -- A VGS=0V, VDS=25V -- -- 3.0 Ω VGS=0V, ID=0.15A [3] -- -- 2.8 Ω VGS=5V, ID=0.15A [3] -3.3 -- -1.5 V VDS=3V, ID=8µA -- 0.46 -- S VDS=20V, ID=0.15A Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature Min. Typ. Max. CISS Input Capacitance -- 81.3 -- COSS Oput Capacitance -- 32.7 -- CRSS Reverse Transfer Capacitance -- 6.6 -- QG Total Gate Charge -- 2.52 -- QGS Gate-to-Source Charge -- 0.69 -- QGD Gate-to-Drain (Miller) Charge -- 0.7 -- Resistive Switching Characteristics Symbol Parameter Typ. Max. Turn-on Delay Time -- 6.2 -- Rise Time -- 4.8 -- Turn-off Delay Time -- 11.6 -- Fall Time -- 17 -- ARK Microelectronics Co., Ltd. www.ark-micro.com trise td(OFF) tfall Test Conditions pF VGS=-5V VDS=25V f=1.0MHZ nC VGS=-5V~5V VDS=50V, ID=0.15A Essentially independent of operating temperature Min. td(ON) Unit 2 /7 Unit Test Conditions ns VGS=-5V~5V VDD=50V, ID=0.15A RG=10 Ω Rev. 2.1 Aug. 2022 DMX1072/DMS1072 Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- 1.5 V ISD=0.15A, VGS=-10V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3 /7 Rev. 2.1 Aug. 2022 DMX1072/DMS1072 Typical Characteristics Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Maximum Power Dissipation vs. Case Temperature 1.6 0.4 1.2 ID，Drain Current(A) PD, Power Dissipation (W) 1.4 DMS1072 1 0.8 0.6 DMX1072 0.4 0.3 0.2 0.1 0.2 0 0 25 25 50 75 100 125 TC, Case Temperature (℃) 75 100 125 150 TC，Case Temperature(℃) Figure 3.Typical Output Characteristics Figure 4. Typical Transfer Characteristics 0.5 4.0 ID，Dranin-to-Source Current(A) VGS=0V ID，Drain Current(A) 50 150 0.4 VGS=-0.2V 0.3 0.2 VGS=-0.5V 3.5 VDS=5V 3.0 2.5 2.0 1.5 1.0 0.1 VGS=-0.8V 0.5 VGS=-1.1V 0.0 0.0 0 VGS, Gate-to-Source Voltage(V) 5 5 10 15 VDS，Drain Voltage(V) -3 20 -2 -1 0 1 2 3 4 5 6 VGS，Gate-to-Source Voltage(V) Figure 5. Typical Gate Charge vs. Gate-toSource Voltage 4 3 2 1 0 -1 -2 -3 -4 -5 0 1 2 QG, Total Gate Charge(nC) ARK Microelectronics Co., Ltd. 3 www.ark-micro.com 4 /7 Rev. 2.1 Aug. 2022 DMX1072/DMS1072 Package Dimensions SOT-89 ARK Microelectronics Co., Ltd. www.ark-micro.com 5 /7 Rev. 2.1 Aug. 2022 DMX1072/DMS1072 SOT-223 ARK Microelectronics Co., Ltd. www.ark-micro.com 6 /7 Rev. 2.1 Aug. 2022 DMX1072/DMS1072 Published by ARK Microelectronics Co., Ltd. ADD: 4F,D26,UESTC National Science Park No. 1 Shuangxing Avenue, Gongxing Street , Shuangliu District, Chengdu, China (Sichuan) Pilot Free Trade Zone. All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. 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As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 7 /7 Rev. 2.1 Aug. 2022