DMX1315E

DMZ1315E/DMX1315E UltraVt® Depletion-Mode Power MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ESD Improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Proprietary Advanced Ultrahigh Vth Technology RoHS Compliant Halogen-free Available BVDSX VGS(off) IDSS,min 130V -17V to -27V 100mA SOT-89 SOT-23 D D Applications ➢ ➢ ➢ ➢ D S G G Quick Charger Current Source Voltage Source Type-C/PD charger D G S S General Description This novel depletion mode MOSFET, developed and manufactured by ARK proprietary UltraVt® technology. It has a high threshold voltage. By using the sub threshold characteristics, the depletion mode MOSFET can provide stably power to the load, and the voltage can be clamped to protect the load without Zener diode, and the circuit consumption is reduced. Ordering Information Part Number Package Marking Remark DMZ1315E SOT-23 1315 Halogen Free DMX1315E SOT-89 1315 Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter DMZ1315E DMX1315E VDSX Drain-to-Source Voltage[1] 130 ID Continuous Drain Current 0.1 IDM Pulsed Drain Current[2] 0.4 PD Power Dissipation VGS Gate-to-Source Voltage VESD TL TJ and TSTG Unit V A 0.5 W 1.0 ±30 V ESD[3] 700 V Source to Gate ESD[3] 700 V Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 Gate to Source Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. DMZ1315E DMX1315E Unit 250 125 K/W www.ark-micro.com 1 /8 Rev. 1.0 Mar. 2022 DMZ1315E/DMX1315E Electrical Characteristics OFF Characteristics Symbol TA =25℃ unless otherwise specified Parameter BVDSX Drain-to-Source Breakdown Voltage ID(OFF) Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current Min. Typ. Max. Unit Test Conditions 130 -- -- V VGS=-30V, ID=250uA -- -- 10 µA VDS=130V，VGS= -30V -- -- 20 VGS=+30V, VDS=0V µA -- -- -20 VGS=-30V, VDS=0V ON Characteristics Symbol IDSS TA =25℃ unless otherwise specified Parameter Saturated Drain-to-Source Current Min. Typ. Max. Unit Test Conditions 100 -- -- mA VGS=0V, VDS=25V -- 11 30 Ω VGS=0V，ID=50mA[4] RDS(ON) Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage -17 -- -27 V VDS=9V, ID=8µA VCL Source-to-Gate Clamp Voltage -11.5 -- -- V VDS=9V, ID=5mA Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- 1.2 V ISD=100mA, VGS=-30V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] The test is based on JEDEC EIA/JESD22-A114 (HBM). [4] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 2 /8 Rev. 1.0 Mar. 2022 DMZ1315E/DMX1315E Typical and highlight Characteristics DMZ1315E/DMX1315E is an UltraVt® depletion mode MOS device. A stable output voltage source or current source is implemented by using the sub-threshold characteristics of the device. Its basic application is shown as Figure 1: DMZ1315E/DMX1315E S Vout + Vin+ D G RL Vout - Vin- Figure1. Drain Current ID is decided by Load Resistance Figure 3. Clamp Voltage vs. Drain Current Figure 2. Clamp Voltage vs. Input Voltage 26 VCL，Clamp Voltage(V) VCL，Clamp Voltage(V) 20 16 12 8 TA=25℃ RL=5KΩ 4 0 0 20 40 60 80 Vin，Input Voltage(V) VCL，Clamp Voltage(V) 18 100 24 TA=25℃ Vin=40V 22 20 18 16 14 12 10 10 100 1000 ID，Drain Current(uA) Figure 4. Clamp Voltage vs. Junction Tempreature 17 Vin=40V ID=5mA 16 15 14 13 12 11 10 -20 ARK Microelectronics Co., Ltd. 0 20 40 60 80 TJ，Junction Tempreature(℃) www.ark-micro.com 3 /8 100 Rev. 1.0 Mar. 2022 DMZ1315E/DMX1315E Typical Application In the QC2.0/3.0 and Type-C/PD charger circuits, using DMZ1315E/DMX1315E as a high voltage linear regulators can make the PWM IC power supply circuit more simplified, as shown below: In Figure 5, the transistor Q is used to provide power, and the zener diode Z is used to clamp voltage, the power supply circuit of IC is composed of several components. + DMZ6005E PD controller Synchronous rectifier IC Q VCC PWM IC Z Figure 5. Normal Circuit with Transistor and Diode In Figure 6, providing power and clamp voltage use only one device—DMZ1315E/DMX1315E, the circuit is simplified. + DMZ6005E PD controller DMZ1315E /DMX1315E Synchronous rectifier IC VCC PWM IC - Figure 6. Circuit with DMZ1315E/DMX1315E From the above function, we can see the depletion mode MOSFET operate in sub-threshold region, the Vout is always below or closed to the threshold voltage or Gate-to-Source Cut-off Voltage VGS(OFF), no matter how the input voltage Vin changes. Therefore, in addition to provide power for load like IC, the output voltage Vout can be clamped to the VGS(OFF), the IC is then protected from variable voltage or current. DMZ1315E/DMX1315E can support up to 130V input voltage. Vout and Vin have relations following the formulas: ARK Microelectronics Co., Ltd. www.ark-micro.com 4 /8 Rev. 1.0 Mar. 2022 DMZ1315E/DMX1315E If Vin＜∣VGS(OFF)∣, then Vout ≈ Vin If Vin ≥∣VGS(OFF)∣, then Vout ≤ VGS(OFF) The Ultrahigh Vth Depletion Mode Power MOSFET--DMZ1315E/DMX1315E, was developed by ARK Microelectronics proprietary and patent technology. The threshold voltage VGS(OFF) of DMZ1315E/ DMX1315E is between -17V and -27V, can provide sufficient voltage for load such like a PWM IC in the primary side of a Flyback converter. ARK Microelectronics Co., Ltd. www.ark-micro.com 5 /8 Rev. 1.0 Mar. 2022 DMZ1315E/DMX1315E Package Dimensions ARK Microelectronics Co., Ltd. www.ark-micro.com 6 /8 Rev. 1.0 Mar. 2022 DMZ1315E/DMX1315E ARK Microelectronics Co., Ltd. www.ark-micro.com 7 /8 Rev. 1.0 Mar. 2022 DMZ1315E/DMX1315E Published by ARK Microelectronics Co., Ltd. ADD: D26,UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan. All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd’s terms and conditions supplied at the time of order acknowledgement. ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessary performed. ARK Microelectronics Co., Ltd. does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using ARK Microelectronics Co., Ltd’s components. To minimize risk, customers must provide adequate design and operating safeguards. ARK Microelectronics Co., Ltd. does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in ARK Microelectronics Co., Ltd’s data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for such altered documentation. Resale of ARK Microelectronics Co., Ltd’s products with statements different from or beyond the parameters stated by ARK Microelectronics Co., Ltd. for the product or service voids all express or implied warrantees for the associated ARK Microelectronics Co., Ltd’s product or service and is unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for any such statements. Life Support Policy: ARK Microelectronics Co., Ltd’s products are not authorized for use as critical components in life devices or systems without the expressed written approval of ARK Microelectronics Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 8 /8 Rev. 1.0 Mar. 2022