DMX0622E

DMZ0622E/ DMX0622E Ultrahigh Threshold Voltage Depletion-Mode Power MOSFET General Features       ESD improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Proprietary Advanced Ultrahigh Vth Technology RoHS Compliant Halogen-free available BVDSX VGS(off),min IDSS,min 70V -25V 120mA SOT-89 Applications    SOT-23 D Quick Charge (QC4.0)/ Type C PD Charger or Adapter Current Source Voltage Source D D S G G D G S S General Description DMZ0615E/ DMX0615E / DMZ0622E/ DMX0622E /DMX1015E- novel series of depletion mode MOSFETs are designed with ARK Microelectronics proprietary and patent ultrahigh threshold voltage technology. DMZ0622E is a wide range voltage (up to 70V) regulator. Its input voltage can be 70V high, and it also can provide stable output voltage from about 11V to 23V in accordance with different work conditions. It is very suitable for Quick Charge (QC4.0) / Type C PD Charger application which have variable charging voltage output ( 5-20V). By using the sub threshold characteristics, the depletion mode MOSFET DMZ0622E can provide stable power to the load, and the voltage of load can be clamped to protect the load without zener diode. DMZ0622E can endure wide voltage input up to 70V, and can provide with proper voltage to the load. These characteristics are fit for the application of Quick Charge (QC4.0) /Type C PD Charger, and its PWM control IC need to be powered with stable voltage. Ordering Information Part Number Package Marking Remark DMZ0622E SOT-23 0622 Halogen Free DMX0622E SOT-89 0622 Halogen Free Absolute Maximum Ratings Symbol Parameter VDSX Drain-to-Source Voltage VDGX ID TA=25℃ unless otherwise specified DMZ0622E [1] DMX0622E Unit 70 V Drain-to-Gate Voltage[1] 70 V Continuous Drain Current 0.1 [2] A IDM Pulsed Drain Current PD Power Dissipation VGS Gate-to-Source Voltage ±30 V VESD(G-S) Gate Source ESD IEC, C=150pF, R=330Ω 400 V Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TL TJ and TSTG 0.4 0.5 Operating and Storage Temperature Range 1.0 W ℃ -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. ARK Microelectronics Co., Ltd. www.ark-micro.com 1/8 Rev. 2.2 May. 2020 DMZ0622E/ DMX0622E Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient DMZ0622E DMX0622E Unit 250 125 K/W Electrical Characteristics OFF Characteristics Symbol BVDSX Parameter Drain-to-Source Breakdown Voltage ID(OFF) Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current TA =25℃ unless otherwise specified Min. 70 Typ. -- Max. -- Unit V Test Conditions VGS=-30V, ID=250µA -- -- 15 µA VDS=70V，VGS= -30V -- -- 1.0 mA --- --- 20 -20 µA ON Characteristics Symbol IDSS Parameter Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage gfs Forward Transconductance TA =25℃ unless otherwise specified Min. 120 Typ. -- Max. -- Unit mA Test Conditions VGS=0V, VDS=25V -- 10 15 Ω VGS=0V，ID=100mA [3] -19 -22 -25 V VDS =20V, ID=8µA -- 130 -- mS VDS =20V, ID=5mA Dynamic Characteristics Symbol CISS COSS CRSS QG QGS QGD Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Essentially independent of operating temperature Min. ------- Typ. 1.5 2.6 0.74 9 1.5 2.3 Resistive Switching Characteristics Symbol td(ON) trise td(OFF) tfall Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Parameter Diode Forward Voltage Max. ------- Unit Test Conditions pF VGS=-30V VDS=25V f=1.0MHZ nC VGS= -30V~0V VDS=30V, ID=100mA Essentially independent of operating temperature Min. ----- Typ. 17 200 11 4 Source-Drain Diode Characteristics Symbol VSD VDS=70V，VGS= -30V TJ=125℃ VGS=+30V, VDS=0V VGS=-30V, VDS=0V Max. ----- Unit Test Conditions us VGS = -30V~-0V VDD = 35V, ID=100mA RG = 20Ohm TA=25℃ unless otherwise specified Min -- Typ. -- Max. 1.2 Units V Test Conditions ISD =100 mA, VGS = -30 V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 2/8 Rev. 2.2 May. 2020 DMZ0622E/ DMX0622E Typical and highlight Characteristics 0.12 0.10 0.8 ID, Drain Current (A) PD, Power Dissipation (W) 1 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Maximum Power Dissipation vs. Case Temperature SOT-89 0.6 0.4 SOT-23 0.2 0.08 0.06 0.04 0.02 0.00 0 25 50 75 100 125 25 150 50 TC, Case Temperature (℃) 75 100 125 TC, Case Temperature (℃) 150 DMZ0622E/DMX0622E can be used as a current or voltage source to supply power to the load, as shown in Figure 3. Figure 3. DMZ0622E/DMX0622E as a voltage source The output voltage Vout is determined by the load RL, current ID and VGS(OFF) :. ID = IDSS(1+IDRL/VGS(OFF))2 Vout = -VGS = IDRL 1.E-02 20 ID Vout 1.E-03 16 1.E-04 12 1.E-05 1.E-06 1E+02 Vout, Output Voltage(V) ID, Drain Current(A) Figure 4. DMZ0622E/DMX0622E output Characteristics vs. Load Resistance 1.E-01 24 8 1E+03 ARK Microelectronics Co., Ltd. 1E+04 1E+05 1E+06 RL, Load Resistance(ohm) www.ark-micro.com 3/8 1E+07 Rev. 2.2 May. 2020 DMZ0622E/ DMX0622E From the above function, we can see the depletion mode MOSFET operate in sub-threshold region, the Vout is always below or closed to the threshold voltage or Gate-to-Source Cut-off Voltage VGS(OFF), no matter how the input voltage Vin changes. Therefore, in addition to provide power for load like IC, the output voltage Vout can be clamped to the VGS(OFF), the IC is then protected from variable voltage or current. DMZ0622E/DMX0622E can support up to 70V input voltage. Vout and Vin have relations following the formulas: If Vin ＜∣VGS(OFF)∣, then If Vin ≥∣VGS(OFF)∣, then Vout ≈ Vin Vout ≤ VGS(OFF) The Ultrahigh Threshold Voltage Depletion Mode Power MOSFET--DMZ0622E/DMX0622E, was developed by ARK Microelectronics proprietary and patent technology. The threshold voltage VGS(OFF) of DMZ0622E/DMX0622E is between -19V and -25V, can provide sufficient voltage for load such like a PWM IC in the primary side of a Flyback converter. Since DMZ0622E/DMX0622E has a variation distribution of VGS(OFF), from -19V to -25V, so its output voltage is different with different VGS(OFF). Figure 5 shows the characteristics of output voltage Vout vs. junction temperature of two DMZ0622E/DMX0622E MOSFETS which has the highest VGS(OFF),=-19V and lowest VGS(OFF),=-25V respectively. This means the clamped voltage of Vout will also change with temperature and VGS(OFF). Figure 5. Output voltage vs. Junction Trmperature Vout, Output voltage(V) 28 Load Current=8uA 26 VGS(OFF)=-25V 24 22 20 VGS(OFF)=-19V 18 -10 10 30 50 70 90 110 TJ, Junction Temperature(℃) 130 150 Fig 6 and Fig 7 shows the characteristics of output voltage Vout vs. load current IRL and junction temperature TJ of two DMZ0622E/DMX0622E MOSFETS which has the highest VGS(OFF),=-19V and lowest VGS(OFF),=-25V respectively. Figure 6. Output Voltage vs. Load Current 26 Figure 7. Output Voltage vs. Load Current 26 VGS(OFF)=-19V Vout, Output voltage(V) VGS(OFF)=-25V Vout, Output voltage(V) 22 TJ=150℃ 18 TJ=25℃ 14 24 22 TJ=150℃ 20 TJ=25℃ 18 TJ=-10℃ TJ=-10℃ 16 10 0 2 4 6 ID, Drain Current(mA) ARK Microelectronics Co., Ltd. 8 10 0 2 www.ark-micro.com 4/8 4 6 8 ID, Drain Current(mA) 10 Rev. 2.2 May. 2020 DMZ0622E/ DMX0622E Typical applications: Figure 8 is a typical schematic of a primary side of a Flyback power source, it serves as a quick charger with TypeC PD or Quick Charge( QC) protocols. These kind of quick chargers can provide variable charging voltage (from 5-20V) output, these voltages will turn back to the primary side, so that the voltage of auxilary coil, which is used as a power source to PWM IC has to be changed in a wide ranges, even it can be too high to use for PWM IC. The normal solution is using a transistor and zener diode and some resistors to provide PWM IC with stable voltage. But the circuit is complicated and the BOM cost is higher. The alternate cost effective solution is represent in Figure 9. The transistor, zener diode and resistors in Figure 8 can be simply replaced with DMZ0622E/DMX0622E, then the space of PCB is saved with fewer components, and the cost will be down. The depletion mode MOSFET DMZ6005E is used for start-up, when the charger start to work, the auxilary coil will supply voltage for the PWM IC, then DMZ6005E is shut off, so that the standby power dispation of system will be significantly low. The documents of DMZ6005E can be accessed in ARK’s website. Figure 8. Normal circuit with transistor and diode Figure 9. Circuit with DMZ0622E/DMX0622E ARK Microelectronics Co., Ltd. www.ark-micro.com 5/8 Rev. 2.2 May. 2020 DMZ0622E/ DMX0622E Package Dimensions ARK Microelectronics Co., Ltd. www.ark-micro.com 6/8 Rev. 2.2 May. 2020 DMZ0622E/ DMX0622E ARK Microelectronics Co., Ltd. www.ark-micro.com 7/8 Rev. 2.2 May. 2020 DMZ0622E/ DMX0622E Published by ARK Microelectronics Co., Ltd. ADD: 4F, D26, UESTC National Science Park No. 1 Shuangxing Avenue, Gongxing Street, Shuangliu District, Chengdu, China (Sichuan) Pilot Free Trade Zone. Tel：+86-28-8523-2215 Email: sales@ark-micro.com http://www.ark-micro.com All Rights Reserved Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. 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Life Support Policy: ARK Microelectronics Co., Ltd.’s products are not authorized for use as critical components in life devices or systems without the expressed written approval of ARK Microelectronics Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 8/8 Rev. 2.2 May. 2020