AO7800

AO7800 www.VBsemi.com Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.086 at VGS = 4.5 V 2.6a 0.110 at VGS = 2.5 V 2.5 a 0.180 at VGS = 1.8 V 2.3 a VDS (V) 20 Qg (Typ.) 5.0 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Typical ESD Protection 2100 V HBM • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications SOT-363 SC-70 D1 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 G1 D2 G2 Top View S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Parameter TC = 70 °C TA = 25 °C 2.2a ID 2.3a, b, c 1.8b, c TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C Maximum Power Dissipation TA = 25 °C 2.3 IS 2.10b, c 2.70 1.70 PD W 1.5 b, c 1.0 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 8 TC = 25 °C TC = 70 °C V 2.6a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Symbol Typical Maximum Maximum Junction-to-Ambientb, d Parameter t≤5s RthJA 130 170 Maximum Junction-to-Foot (Drain) Steady State RthJF 80 100 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. 服务热线：400-655-8788 1 AO7800 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) ID = 250 µA VDS = VGS, ID = 250 µA V 20 0.5 2.0 VDS = 0 V, VGS = ± 8 V ± 25 VDS = 0 V, VGS = ± 4.5 V 1 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1 A 0.086 RDS(on) VGS = 2.5 V, ID = 1 A 0.110 VGS = 1.8 V, ID = 0.2 A 0.180 VDS = 4 V, ID = 1.5 A 4 VDS = 10 V, VGS = 8 V, ID = 1.5 A 5.0 VDS = 10 V, VGS = 4.5 V, ID = 1.5 A 1.0 Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C - 2.3 4 V µA µA A Ω S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 3.0 nC 2.0 f = 1 MHz 0.4 1.9 3.8 43 65 80 120 480 720 tf 220 330 td(on) 22 33 td(on) tr td(off) tr td(off) VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω tr 46 70 645 968 215 323 kΩ ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 2.6 A 4 IS = 1.2 A, VGS = 0 V IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C 0.8 1.2 V 9 18 ns 2 4 nC 5 4 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 AO7800 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-3 0.5 10-4 10-5 IG - Gate Current (A) IG - Gate Current (mA) 0.4 0.3 TJ = 25 °C 0.2 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 0.1 10-9 10-10 0 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) 0 15 Gate Current vs. Gate-to-Source Voltage 3 6 9 12 VGS - Gate-to-Source Voltage (V) 15 Gate Current vs. Gate-to-Source Voltage 1.0 4 V GS = 5 V thr u 3 V 0.8 ID - Drain Current (A) ID - Drain Current (A) 3 V GS = 1.5 V 2 0.6 T C = 25 °C 0.4 T C = 125 °C 1 0.2 V GS = 1 V 0 0.0 0.5 1.0 1.5 0.0 0.0 2.0 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 8 VGS - Gate-to-Source Voltage (V) 0.25 RDS(on) - On-Resistance (Ω) T C = - 55 °C V GS = 1.8 V 0.20 0.15 V GS = 2.5 V 0.10 V GS = 4.5 V 0.05 0 1 2 3 4 ID = 1.5 A 6 V DS = 10 V V DS = 16 V V DS = 5 V 4 2 0 0.0 0.5 1.0 1.5 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge 2.0 服务热线：400-655-8788 3 AO7800 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 ID = 1 A 1.5 V GS = 2.5 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 1.7 1.3 V GS = 4.5 V 1.1 T J = 150 °C T J = 25 °C 1 0.9 0.7 - 50 0.1 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 0.0 150 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.80 0.4 0.65 0.3 ID = 250 μA T J = 125 °C 0.2 VGS(th) (V) RDS(on) - On-Resistance (Ω) ID = 1 A T J = 25 °C 0.50 0.35 0.1 0.20 - 50 0.0 1 2 3 4 5 - 25 0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 Threshold Voltage 10 5 Limited by RDS(on)* 100 μs ID - Drain Current (A) Power (W) 4 3 2 1 1 ms 10 ms 0.1 100 ms 1 TA = 25 °C Single Pulse 0 0.01 0.1 1 10 100 Time (s) Single Pulse Power, Junction-to-Ambient 600 0.01 0.1 1 s, 10 s DC BVDSS Limited 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 AO7800 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.4 ID - Drain Current (A) 1.8 Package Limited 1.2 0.6 0.0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 1.5 0.75 1.2 0.60 0.9 0.45 Power (W) Power (W) Current Derating* 0.6 0.3 0.30 0.15 0.0 0.00 0 25 50 75 100 TF - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 AO7800 www.VBsemi.com TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 170 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 AO7800 SCĆ70: www.VBsemi.com 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom A1 服务热线：400-655-8788 7 AO7800 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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