BT139-800E

BT139 Series 16A TRIACs 4 Quadrants TRIACs ShenZhenHanKingyuan Electronic CO.,Ltd TRIACs BT139 Series4 Quadrants ShenZhenHanKingyuan Electronic CO.,Ltd 1 2 1 3 2 01. 3 TO-220F Insulated TO-220C 2 1 3 TO-263 FEATURES IT(RMS): 16A VGT: 1.5V VDRM VRRM:800V APPLICATIONS Washing machine,vacuums, massager,solid state relay，AC Motor speed regulation and so on. www.scr-ky.com PAGE.01/06 TRIACs BT139 Series 4 Quadrants ShenZhenHanKingyuan Electronic CO.,Ltd Absolute Maximum Ratings (Tj=25°C unless otherwise specifed) Symbol Parameter Conditions Ratings Unit BT139-600 600 V BT139-800 800 V Tc=110°C 16 A 160/168 A Tp=10ms 144 A²s Tj=125°C 1 W Tj=125°C 4 A Operating Junction Temperature ～40~125 °C Storage Temperature ～40~150 °C VDRM Repetitive Peak Off-State Voltage VRRM IT(RMS) R.M.S On-State Current ITSM I²t tp=16.7ms/ tp=10ms Surge On-State Current I²t for fusing PG(AV) Average Gate Power Dissipation IGM Tj TSTG 02. Peak Gate Current Electrical Characteristics Symbol Parameter (Tj=25°C unless otherwise specifed) Test Conditions Value D E F G Unit Tj=25°C ≤5 uA Tj=125°C ≤1 mA Tj=25°C ≤5 uA Tj=125°C ≤1 mA Forward "on" voltage IT=35A tp=380us 1.55 V VGT Gate trigger voltage VD=12V ,RL=30Ω ≤1.5 V di/dt Critical-rate of rise of I,II,III commutation current. IV IG=2XIGT,tr≤ 100ns,F=100Hz ≥50 A /us ≥10 A /us IGT Gate trigger current IDRM Repetitive Peak Off-State Current IRRM Repetitive Peak Reverse Current VTM IH VDG dv/dt Holding current I,II,III IV VD=12V RL=30Ω IT=0.2A Gate non-trigger VD=VDRM ,RL=30Ω ALL voltage ,TJ=125°C TJ=125°C VD=2/3VDRM Critical-rate of rise of Gate open circuit commutation voltage ≤5 ≤10 ≤25 ≤50 mA ≤10 ≤25 ≤70 ≤100 mA ≤10 ≤25 ≤30 ≤60 mA ≥0.2 ≥5 ≥10 V ≥25 ≥200 V/us Rth(j-c) Thermal resistance Junction to case 1.1 °C/W Rth(j-a) Thermal resistance Junction to ambient 50 °C/W www.scr-ky.com PAGE.02/06 FIG1 FIG2 RMS on-state current versus case temperature Maximum power dissipation versus RMS on-state current P(w) 24 IT(RMS) (A) 24 20 20 16 16 12 12 8 8 4 4 0 0 03. TRIACs BT139 Series 4 Quadrants ShenZhenHanKingyuan Electronic CO.,Ltd 4 8 IT(RMS) (A) 12 16 20 α=180° TO-220C TO-263 TO-220F(Ins) Tc (℃) 0 0 25 FIG3 50 75 100 125 4 5 FIG4 On-state characteristics (maximum values) Surge peak on-state current versus number of cycles ITM (A) ITSM (A) 100 140 t=20ms One cycle 120 Tj=Tjmax 100 80 10 60 40 Tj=25℃ 20 0 1 10 Number of cycles 100 1000 1 0 FIG5 1 VTM (V) 3 2 FIG6 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp