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NSI83085A-DSWR

NSI83085A-DSWR

  • 厂商:

    NOVOSENSE(纳芯微)

  • 封装:

    SOIC16_300MIL

  • 描述:

    高可靠性隔离半双工和全双工RS-485收发器,500kbps 3V~5.5V

  • 数据手册
  • 价格&库存
NSI83085A-DSWR 数据手册
NSi83085x/NSi83086x High Reliability Isolated Half and Full-Duplex RS-485 Transceivers Datasheet (EN) 1.4 Product Overview NSi83085x is a high reliability isolated half duplex RS-485 transceiver based on NOVOSENSE digital isolation technology, while NSi83086x is an isolated full duplex RS485 transceiver. Both devices are safety certified by UL1577 support 5kVrms insulation withstand voltages, while providing high electromagnetic immunity and low emissions at low power consumption. The Bus pins of NSi83085x/NSi83086x are protected from ±10kV system level ESD to GND2 on Bus side. These devices feature fail-safe circuitry, which guarantees a logic-high receiver output when the receiver inputs are open or shorted. The devices have a 1/8-unit-load receiver input impedance that allows up to 256 transceivers on the bus. The data rate of NSi83085x is 500kbps. The device is slew limited to reduce EMI and reflections with improperly terminated transmission line. The data rate of NSi83086x is up to 16Mbps. Key Features  Up to 5000Vrms Insulation voltage  Bus side power supply voltage: 3.0V to 5.5V Safety Regulatory Approvals  UL recognition: up to 5000Vrms for 1 minute per UL1577  CQC certification per GB4943.1-2011  CSA component notice 5A  DIN VDE V 0884-11:2017-01 Applications  Industrial automation system  Isolated RS-485 communication  Smart electric meter and water meter  Security and protection monitoring Device Information Part Number NSI8308xA-DSWR Package SOW16 Body Size 10.30mm × 7.50mm NSI8308x SOW16 10.30mm × 7.50mm  VDD1 supply voltage: 2.5V to 5.5V  High CMTI: ±150kV/us  High system level EMC performance: Functional Block Diagrams Bus Pins meet IEC61000-4-2 ±10kV ESD  Fail-safe protection receiver  Up to 256 transceivers on the bus  Isolation Barrier Life: >60 years  Operation temperature: -40℃~105℃  RoHS-compliant packages: SOW16 Copyright © 2020, NOVOSENSE VDD1 1 GND1 2 R 3 16 VDD 2 VDD1 1 16 VDD2 15 GND2 GND1 2 15 GND2 14 NC R 3 14 A /RE 4 13 B /RE 4 13 B DE 5 12 A DE 5 12 Z D 6 11 NC GND1 7 GND1 8 NSi83085 D 6 10 GND2 GND1 7 9 GND2 GND 1 8 11 Y 10 GND2 NSi83086 9 GND2 Figure 1. NSi83085x & NSi83086x Block Diagrams Page 1 NSi83085x/NSi83086x Datasheet (EN) 1.4 INDEX 1. ABSOLUTE MAXIMUM RATINGS ...................................................................................................................................... 3 2. SPECIFICATIONS ................................................................................................................................................................... 3 2.1. DC ELECTRICAL CHARACTERISTICS ...................................................................................................................................... 3 2.2. SWITCHING ELECTRICAL CHARACTERISTICS.......................................................................................................................... 5 2.3. TYPICAL PERFORMANCE CHARACTERISTICS ................................................................................................................. 7 2.4. PARAMETER MEASUREMENT INFORMATION ......................................................................................................................... 9 3. HIGH VOLTAGE FEATURE DESCRIPTION ....................................................................................................................10 3.1. INSULATION AND SAFETY RELATED SPECIFICATIONS .............................................................................................................10 3.2. DIN VDE V 0884-11(VDE V 0884-11):2017-01 INSULATION CHARATERISTICS ............................................................ 11 3.3. REGULATORY INFORMATION.................................................................................................................................................12 4. FUNCTION DESCRIPTION .................................................................................................................................................12 4.1. DATA RATE ...........................................................................................................................................................................12 4.2. TRUE FAIL-SAFE RECEIVER INPUTS ......................................................................................................................................12 4.3. TRUTH TABLES .....................................................................................................................................................................12 4.4. THERMAL SHUTDOWN ..........................................................................................................................................................13 5. APPLICATION NOTE ............................................................................................................................................................13 5.1. 256 TRANSCEIVERS ON THE BUS ...........................................................................................................................................13 5.2. ESD PROTECTION.................................................................................................................................................................13 5.3. LAYOUT CONSIDERATIONS ...................................................................................................................................................14 5.4. TYPICAL APPLICATION ..........................................................................................................................................................14 6. PACKAGE INFORMATION .................................................................................................................................................15 7. TAPE AND REEL INFORMATION ......................................................................................................................................17 8. ORDER INFORMATION .......................................................................................................................................................19 9. REVISION HISTORY ............................................................................................................................................................19 Copyright © 2020, NOVOSENSE Page 2 NSi83085x/NSi83086x Datasheet (EN) 1.4 1. Absolute Maximum Ratings Parameters Symbol Min Power Supply Voltage VDD1, VDD2 -0.5 6 V Maximum Input Voltage /RE, DE, TxD -0.4 VDD+0.4 V VA, VB, VY, VZ -7 12 V Differential input voltage,A with repect to B VID -18 18 V Receiver Output Current Io -15 15 mA Maximum Surge Isolation Voltage VIOSM 4.62 kV Operating Temperature Topr -40 105 ℃ Storage Temperature Tstg -40 150 ℃ HBM (Bus pins and GND) ±8000 V HBM(All pins) ±6000 V CDM ±2000 V Driver Output/Receiver Input Voltage Electrostatic discharge Typ Max Unit Comments 2. Specifications 2.1. DC Electrical characteristics (VDD1=2.5V~5.5V, VDD2=3.0V~5.5V, Ta=-40℃ to 105℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃) Parameters Symbol Min VDD1 VDD 2 Typ Max Unit Comments 2.5 5.5 V 3.0 5.5 V Bus Side 2.97 4.98 mA VDD1=5V, DE=high, /RE=D =low, no load 2.94 4.89 mA VDD1=3V, DE=high, /RE=D =low, no load 2.83 5.02 mA VDD2=5V, DE=high, /RE=D =low, no load(NSi83085x) 2.15 3.23 mA VDD2=5V, DE=high, /RE=D =low, no load(NSi83086x) Power supply voltage Logic-side supply current Bus-side supply current Thermal-Shutdown Threshold Copyright © 2020, NOVOSENSE IDD1 IDD2 TTS 165 ℃ Page 3 NSi83085x/NSi83086x Thermal-Shutdown Hysteresis Common Mode Transient Immunity Datasheet (EN) 1.4 TTSH ℃ 15 CMTI ±100 Input High Voltage VIH 2 Input Low Voltage VIL ±150 kV/us Logic Side 0.8 V DE, D, /RE V DE, D, /RE VIT 1.6 V Input Threshold at rising edge VIT_HYS 0.4 V Input Threshold Hysteresis uA DE,/RE Input Threshold Input Pull up Current IPU 20 Input Pull down Current IPD -20 uA DI Output Voltage High VOH VDD10.3 V IOH = -4mA Output Voltage Low VOL 0.3 V IOL = 4mA Output Short-Circuit Current IOSR 150 mA 0 ≤ VR ≤VDD1 Three-State Output Current IOZ uA 0 ≤ VR ≤ VDD1 , /RE = high Input Capacitance CIN pF DE, D, /RE VDD2 V No Load 2.7 VDD2 V See Figure 2.4.1, RL=100Ω (RS-422),VDD2=5V 1.5 VDD2 V See Figure 2.4.1, RL=100Ω (RS-422),VDD2=3.3V 2.1 VDD2 V See Figure 2.4.1, RL=54Ω (RS-485),VDD2=5V 1.3 VDD2 V See Figure 2.4.1, RL=54Ω (RS-485),VDD2=3.3V 0.2 V See Figure 2.4.1, RL=100Ω or RL=54Ω V See Figure 2.4.1, RL=100Ω or RL=54Ω 0.2 V See Figure 2.4.1, RL=100Ω or RL=54Ω 250 mA 0 ≤ VOUT ≤ +12 V mA −7V ≤ VOUT ≤ VDD2 -15 2 Driver Differential Output Voltage Change in magnitude of the | VOD | Δ|VOD | differential output voltage Common-Mode Output Voltage | VOC | Change in Magnitude of Δ|VOC | VDD2/2 Common-Mode Voltage Driver Short-Circuit Output Current Copyright © 2020, NOVOSENSE IOSD -250 Page 4 NSi83085x/NSi83086x Output Leakage Current (Y and Z) Full-Duplex Datasheet (EN) 1.4 200 uA DE=GND, VIN=12V uA DE=GND, VIN=-7V uA DE=GND, VDD2=GND, VIN=12V uA DE=GND, VDD2=GND, VIN=7V mV −7V ≤ VCM ≤ 12V mV VA+VB=0 kΩ −7V ≤ VCM ≤ 12V, DE=low IO -150 Receiver IA , I B 200 Input Current (A and B) -150 Receiver Differential Threshold Voltage VTH -200 Receiver Input Hysteresis ΔVTH Receiver Input Resistance RIN -125 -10 15 96 2.2. switching Electrical characteristics (VDD1=2.5V~5.5V, VDD2=3.0V~5.5V, Ta=-40℃ to 105℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃) Parameters Symbol Min Typ Max Unit Comments Maximum Data Rate fMAX 0.5 Driver Propagation Delay t PLH 24.4 60 ns See Figure 2.4.2, RL=54Ω,CL=50pF t PHL 24.2 60 ns See Figure 2.4.2, RL=54Ω,CL=50pF PWD 0.2 ns See Figure 2.4.2, RL=54Ω,CL=50pF tF 14.4 ns See Figure 2.4.2, RL=54Ω,CL=50pF tR 14.4 ns See Figure 2.4.2, RL=54Ω,CL=50pF Driver Enable to Output High tZH 20.4 60 ns See Figure 2.4.3, RL=110Ω,CL=50pF Driver Enable to Output Low tZL 24.4 60 ns See Figure 2.4.3, RL=110Ω,CL=50pF Driver Output High to Disable tHZ 32.8 60 ns See Figure 2.4.3, RL=110Ω,CL=50pF Driver Output Low to Disable tLZ 28.6 60 ns See Figure 2.4.3, RL=110Ω,CL=50pF Driver (NSi83085x) Driver Pulse Width Distortion,|t PHL – t PLH | Driver Output Falling Time or Rising time Mbps Receiver (NSi83085x) Copyright © 2020, NOVOSENSE Page 5 NSi83085x/NSi83086x Datasheet (EN) 1.4 Maximum Data Rate fMAX 0.5 Mbps Receiver Propagation Delay t PLH 75 153 ns See Figure 2.4.4, CL=15pF t PHL 74 138 ns See Figure 2.4.4, CL=15pF Receiver Pulse Width Distortion PWD 1 ns |t PHL – t PLH |,See Figure 2.4.4, CL=15pF Receiver Output Falling Time or Rising time tF 2.5 5 ns See Figure 2.4.4, CL=15pF tR 2.5 5 ns See Figure 2.4.4, CL=15pF Receiver Enable to Output High tZH 22 60 ns See Figure 2.4.5, RL=1kΩ,CL=15pF Receiver Enable to Output Low tZL 22 60 ns See Figure 2.4.5, RL=1kΩ,CL=15pF Receiver Disable to Output High tHZ 23 60 ns See Figure 2.4.5, RL=1kΩ,CL=15pF Receiver Disable to Output Low tLZ 23 60 ns See Figure 2.4.5, RL=1kΩ,CL=15pF Driver (NSi83086x) Maximum Data Rate fMAX Driver Propagation Delay t PLH 15.2 25 ns See Figure 2.4.2, RL=54Ω,CL=50pF t PHL 16.4 20.25 ns See Figure 2.4.2, RL=54Ω,CL=50pF PWD 1.2 ns See Figure 2.4.2, RL=54Ω,CL=50pF tF 7.4 15 ns See Figure 2.4.2, RL=54Ω,CL=50pF tR 8.4 15 ns See Figure 2.4.2, RL=54Ω,CL=50pF Driver Enable to Output High tZH 15.4 30 ns See Figure 2.4.3, RL=110Ω,CL=50pF Driver Enable to Output Low tZL 15.4 30 ns See Figure 2.4.3, RL=110Ω,CL=50pF Driver Disable to Output High tHZ 28.2 50 ns See Figure 2.4.3, RL=110Ω,CL=50pF Driver Disable to Output Low tLZ 28.2 50 ns See Figure 2.4.3, RL=110Ω,CL=50pF Driver Pulse Width Distortion,|t PHL – t PLH | Driver Output Falling Time or Rising time 16 Mbps Receiver (NSi83086x) Maximum Data Rate Copyright © 2020, NOVOSENSE fMAX 16 Mbps Page 6 NSi83085x/NSi83086x Receiver Propagation Delay Datasheet (EN) 1.4 t PLH 65 100 ns See Figure 2.4.4, CL=15pF t PHL 98 150 ns See Figure 2.4.4, CL=15pF Receiver Pulse Width Distortion, |t PHL – t PLH | PWD 33 ns See Figure 2.4.4, CL=15pF Receiver Output Falling Time or Rising time tF 2.3 5 ns See Figure 2.4.4, CL=15pF tR 2.1 5 ns See Figure 2.4.4, CL=15pF Receiver Enable to Output High tZH 12 20.7 ns See Figure 2.4.5, RL=1kΩ,CL=15pF Receiver Enable to Output Low tZL 13 18.9 ns See Figure 2.4.5, RL=1kΩ,CL=15pF Receiver Disable to Output High tHZ 13.6 21 ns See Figure 2.4.5, RL=1kΩ,CL=15pF Receiver Disable to Output Low tLZ 14 20.1 ns See Figure 2.4.5, RL=1kΩ,CL=15pF 2.3. TYPICAL PERFORMANCE characteristics Figure 2.1 NSi83085x VDD1 supply current vs Temperature Copyright © 2020, NOVOSENSE Figure 2.2 NSi83085x VDD2 supply current vs Temperature Page 7 NSi83085x/NSi83086x Figure 2.3 NSi83086x VDD1 supply current vs Temperature Figure 2.5 Receiver output current vs Output low voltage Figure 2.7 NSi83085x Transmitter Propagation Delay vs Temperature Temperature Figure 2.9 NSi83086x Transmitter Propagation Delay vs Temperature Copyright © 2020, NOVOSENSE Datasheet (EN) 1.4 Figure 2.4 NSi83086x VDD2 supply current vs Temperature Figure 2.6 Receiver output current vs Output High voltage Figure 2.8 NSi83085x Receiver Propagation Delay vs Figure 2.10 NSi83086x Receiver Propagation Delay vs Temperature Page 8 NSi83085x/NSi83086x Datasheet (EN) 1.4 2.4. Parameter Measurement Information Y RL/2 VOD RL/2 VOC Z Figure 2.4.1 Driver DC Test Load Y D VOD RL CL Z Figure 2.4.2 Driver Timing Test Circuit and waveform GND or VDD1 Y D OUT DE Z CL VDD2 50ohm Figure 2.4.3 Driver Enable Disable Timing Test Circuit and waveform A R OUT B RE 15pF Figure 2.4.4 Receiver Propagation Delay Test Circuit and waveform Copyright © 2020, NOVOSENSE Page 9 NSi83085x/NSi83086x +1.5V A -1.5V B Datasheet (EN) 1.4 R OUT RE 15pF VDD1 50ohm Figure 2.4.5 Receiver Enable Disable Timing Test Circuit and waveform GND1 VDD1 VDD2 R VOUT 15pF /RE B D VDD1 0.8V or 2V A DE GND1 GND2 Figure 2.4.6 Common-Mode Transient Immunity Test Circuit 3. High Voltage Feature Description 3.1. insulation and safety related specifications Parameters Symbol Value Unit Comments Minimum External Air Gap (Clearance) L(I01) 8.0 mm Shortest terminal-to-terminal distance through air Minimum External Tracking (Creepage) L(I02) 8.0 mm Shortest terminal-to-terminal distance across the package surface Minimum internal gap DTI 20 um Distance through insulation Tracking Resistance(Comparative Tracking Index) CTI >600 V DIN EN 60112 (VDE 0303-11); IEC 60112 Material Group Copyright © 2020, NOVOSENSE Ⅰ Page 10 NSi83085x/NSi83086x Datasheet (EN) 1.4 3.2. DIN VDE V 0884-11(VDE V 0884-11):2017-01 insulation charateristics Description Test Condition Symbol Value Unit Installation Classification per DIN VDE 0110 For Rated Mains Voltage ≤ 150Vrms Ⅰto Ⅳ For Rated Mains Voltage ≤ 300Vrms Ⅰto Ⅳ For Rated Mains Voltage ≤ 400Vrms Ⅰto Ⅳ Climatic Classification 40/125/21 Pollution Degree per DIN VDE 0110, Table 1 2 Maximum repetitive isolation voltage Input to Output Test Voltage, Method B1 AC Voltage(Bipolar) VIORM 1131 Vpeak AC Voltage(TDDB) VIORM 800 Vrms DC Voltage VIORM 1131 Vdc V IORM × 1.5 = V pd (m) , 100% production test, V pd (m) 1749 Vpeak t ini = t m = 1 sec, partial discharge < 5 pC Input to Output Test Voltage, Method A After Environmental Tests Subgroup 1 V IORM × 1.3 = V pd (m) , t ini = 60 sec, t m = 10 sec, partial discharge < 5 pC V pd (m) 1399 Vpeak After Input and /or Safety Test Subgroup 2 and Subgroup 3 V IORM × 1.2= V pd (m) , t ini = 60 sec, t m = 10 sec, partial discharge < 5 pC V pd (m) 1399 Vpeak t = 60 sec VIOTM 7000 Vpeak Test method per IEC60065,1.2/50us waveform, VTEST=1.3×VIOSM VIOSM 5384 Vpeak Isolation resistance VIO =500V RIO >109 Ω Isolation capacitance f = 1MHz CIO 0.6 pF Input capacitance CI 2 pF Total Power Dissipation at 25℃ Ps 1499 mW 237 mA 150 ℃ Maximum transient isolation voltage Maximum Surge Isolation Voltage θJA = 84 °C/W, V I = 5.5 V, T J = 150 °C, T A = 25 °C Case Temperature Copyright © 2020, NOVOSENSE Ts Page 11 Saftey Limiting Current (mA) NSi83085x/NSi83086x Datasheet (EN) 1.4 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature (℃) Figure 3.1 NSi83085x/NSi83086x Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 3.3. Regulatory information The NSi83085x/NSi83086x are approved or pending approval by the organizations listed in table. CUL VDE UL 1577 Component Recognition Program1 Single Protection, 5000Vrms Isolation voltage Approved under CSA Component Acceptance Notice 5A DIN VDE V 0884-11(VDE V 0884-11):2017-012 Single Protection, 5000Vrms Isolation voltage Basic Insulation 1131Vpeak, VIOSM=4615Vpeak File (E500602) File (5024579-4880-0001) File (E500602) 1 CQC Certified by CQC11471543-2012 GB4943.1-2011 Basic insulation File (pending) In accordance with UL 1577, each NSi83085x/NSi83086x is proof tested by applying an insulation test voltage ≥ 6000 V rms for 1 sec. 2 In accordance with DIN VDE V 0884-11, each NSi8100W/NSi8101W is proof tested by applying an insulation test voltage ≥ 1273 V peak for 1 sec (partial discharge detection limit = 5 pC). The * marking branded on the component designates DIN VDE V 0884-11 approval. 4. Function Description NSi83085x is a high reliability isolated half duplex RS-485 transceiver , while NSi83086x is an isolated full duplex RS-485 transceiver. Data isolation is achieved using Novosense integrated capacitive isolation that allows data transmission between the logic side and the Bus side. Both devices are safety certified by UL1577 support 5kVRMS insulation withstand voltages. 4.1. Data rate The data rate of NSi83085x is 500kbps. The device is slew limited to reduce EMI and reflections with improperly terminated transmission line. The data rate of NSi83086x is up to 16Mbps. 4.2. True Fail-safe receiver inputs The devices feature fail-safe circuitry, which guarantees a logic-high receiver output when the receiver inputs are open or shorted. The receiver threshold is fixed between -50mV and -200mV, which meets EIA/TIA-485 standard. If the differential input voltage (VA-VB) is greater than or equal to -50mV, receiver output R is logic high. In the case of a terminated bus with all transmitters disabled, the differential input voltage is pulled to zero by the termination resistors. Due to the receiver threshold, the receiver output R is logic high. 4.3. Truth tables Table 4.1 Driver Function Table VDD1 status VDD2 status Copyright © 2020, NOVOSENSE Input Enable Input Outputs1 Page 12 NSi83085x/NSi83086x Datasheet (EN) 1.4 (D) (DE) A/Y B/Z PU PU H H H L PU PU L H L H PU PU X L Z Z PU PU X OPEN Z Z PU PU OPEN H H L PD PU X X Z Z PU PD X X Z Z PD PD X X Z Z 1 PD= Powered down; PU= Powered up; H= Logic High; L= Logic Low; X= Irrelevant; Z= High Impedance; Driver output pins are Y and Z for NSi83086x, A and B for NSi83085x; Table 4.2 Reciever Function Table1 VDD1 status VDD2 status Differential Input Enable Input Output (VA-VB) (/RE) (R) PU PU ≥-50mV L/Open H PU PU ≤-200mV L/Open L PU PU Open/Short L/Open H PU PU X H Z PU PU Idle L H PD PU X X Z PU PD X X H PD PD X X Z 1 PD= Powered down; PU= Powered up; H= Logic High; L= Logic Low; X= Irrelevant; Z= High Impedance. 4.4. Thermal shutdown The device is protected from over temperature damage by integrated thermal shutdown circuitry. When the junction temperature (TJ) exceeds +165°C (typ), the driver outputs go high-impedance. The device resumes normal operation when TJ falls below +145°C (typ). 5. Application Note 5.1. 256 transceivers on the bus The devices have a 1/8-unit-load receiver input impedance (96kΩ) that allows up to 256 transceivers on the bus. Connect any combination of these devices, and/or other RS-485 devices, for a maximum of 32 unit-loads to the line. 5.2. ESD protection ESD protection structures are enhanced on all pins to protect against electrostatic discharge encountered during handing and assembly. The Bus pins have extra protection against static electricity to both the logic side (VDD1 side) and bus side (VDD2 side). ESD protection can be tested in various ways. Below is the ESD spec of the devices. Copyright © 2020, NOVOSENSE Page 13 NSi83085x/NSi83086x Datasheet (EN) 1.4 Bus pins:  ± 8kV HBM.  ±10kV using the Contact Discharge method specified in IEC 61000-4-2 Other pins except bus pins:  ±6kV HBM.  ±7kV using the Contact Discharge method specified in IEC 61000-4-2 5.3. Layout considerations The NSi83085x/NSi83086x requires a 0.1 µF bypass capacitor between VDD and GND. The capacitor should be placed as close as possible to the package. To eliminate line reflections, each cable end is terminated with a resistor, whose value matches the characteristic impedance of the cable. It’s good practice to have the bus connectors and termination resistor as close as possible to the A and B, Y and Z pins. 5.4. Typical application GND1 VDD1 VDD2 GND2 R MICROPROCESSOR AND UART /RE B DE A D Figure 5.1 NSi83085x typical application circuit R R /RE B B /RE DE A A DE D D B R /RE A DE D Figure 5.2 Typical isolated Half-Duplex RS-485 application GND1 MICROPROCESSOR AND UART VDD1 VDD2 GND2 R A /RE B DE Z D Y Figure 5.3 NSi83086x typical application circuit Copyright © 2020, NOVOSENSE Page 14 NSi83085x/NSi83086x Datasheet (EN) 1.4 R A Y D /RE B Z DE Z B /RE Y A R Master Z Y A B Slave Slave R /RE DE D Figure 5.4 Typical isolated Full-Duplex RS-485 application 6. Package Information VDD1 1 16 VDD2 GND1 2 15 GND2 R 3 14 NC /RE 4 13 B DE 5 12 A D 6 11 NC GND1 7 GND1 8 10 GND2 NSi83085 9 GND2 Figure 6.1 NSi83085x Package VDD1 1 16 VDD2 GND1 2 15 GND2 3 14 A /RE 4 13 B DE 5 12 Z 6 11 Y R D GND1 7 GND1 8 10 GND2 NSi83086 9 GND2 Figure 6.2 NSi83086x Package Copyright © 2020, NOVOSENSE Page 15 NSi83085x/NSi83086x Datasheet (EN) 1.4 Figure 6.3 SOIC16 Package Shape and Dimension in millimeters and (inches) Table6.1 NSi83085x Pin Configuration and Description NSi83085x PIN NO. SYMBOL FUNCTION 1 VDD1 Power Supply for Isolator Side 1 2 GND1 Ground 1, the ground reference for Isolator Side 1 3 R Receive output 4 /RE Receive enable input. This is an active low input. 5 DE Driver enable input. This is an active high input 6 D Driver transmit data input. 7 GND1 Ground 1, the ground reference for Isolator Side 1 8 GND1 Ground 1, the ground reference for Isolator Side 1 9 GND2 Ground 2, the ground reference for Isolator Side 2 10 GND2 Ground 2, the ground reference for Isolator Side 2 11 NC No Connection. 12 A Noninverting Driver Output/Receiver Input. When the driver is disabled, or when VDD1 or VDD2 is powered down, Pin A is put into a high impedance state to avoid overloading the bus. 13 B Inverting Driver Output/Receiver Input. When the driver is disabled, or when VDD 1 or VDD2 is powered down, Pin B is put into a high impedance state to avoid overloading the bus. Copyright © 2020, NOVOSENSE Page 16 NSi83085x/NSi83086x Datasheet (EN) 1.4 14 NC No Connection. 15 GND2 Ground 2, the ground reference for Isolator Side 2 16 VDD2 Power Supply for Isolator Side 2 Table6.2 NSi83086x Pin Configuration and Description NSi83086x PIN NO. SYMBOL FUNCTION 1 VDD1 Power Supply for Isolator Side 1 2 GND1 Ground 1, the ground reference for Isolator Side 1 3 R Receive output 4 /RE Receive enable input. This is an active low input. 5 DE Driver enable input. This is an active high input 6 D Driver transmit data input. 7 GND1 Ground 1, the ground reference for Isolator Side 1 8 GND1 Ground 1, the ground reference for Isolator Side 1 9 GND2 Ground 2, the ground reference for Isolator Side 2 10 GND2 Ground 2, the ground reference for Isolator Side 2 11 Y Noninverting Driver Output. When the driver is disabled, or when VDD 1 or VDD2 is powered down, Pin Y is put into a high impedance state to avoid overloading the bus. 12 Z Inverting Driver Output. When the driver is disabled, or when VDD 1 or VDD2 is powered down, Pin Z is put into a high impedance state to avoid overloading the bus. 13 B Inverting Receiver Input. 14 A Noninverting Receiver Input. 15 GND2 Ground 2, the ground reference for Isolator Side 2 16 VDD2 Power Supply for Isolator Side 2 7. Tape and Reel Information Copyright © 2020, NOVOSENSE Page 17 NSi83085x/NSi83086x Copyright © 2020, NOVOSENSE Datasheet (EN) 1.4 Page 18 NSi83085x/NSi83086x Datasheet (EN) 1.4 Figure 7.1 Tape and Reel Information of SOW16 8. Order Information Part No. NSi83085A -DSWR NSi83086A -DSWR NSi83085 NSi83086 Isolation Rating(kVRMS) 5 Duplex MSL Temperature No. of Nodes Package SPQ Half Max Data Rate (Mbps) 0.5 3 -40 to 105℃ 256 SOW16 1000 5 Full 16 3 -40 to 105℃ 256 SOW16 1000 5 Half 0.5 3 -40 to 105℃ 256 SOW16 1000 5 Full 16 3 256 SOW16 1000 -40 to 105℃ NOTE: All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifications and peak solder temperatures. 9. Revision History Copyright © 2020, NOVOSENSE Page 19 NSi83085x/NSi83086x Revision 1.0 1.1 1.2 1.3 1.4 Description Initial version Update format Added MSL information Added NSi83085 and NSi83086 information Correction MSL level Copyright © 2020, NOVOSENSE Datasheet (EN) 1.4 Date 2020/12/5 2021/2/25 2021/3/2 2021/4/8 2021/6/8 Page 20
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NSI83085A-DSWR
  •  国内价格
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库存:97