BYC5-1200PQ

BYC5-1200P Hyperfast power diode Rev.01 - 12 October 2017 Product data sheet 1. General description EEPPTM- Efficiency Enhanced Pt Planar rectifier in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits • • • • • • • • Fast switching Reduces switching losses with improved lower reverse recovery charge Soft recovery characteristics Low thermal resistance Low leakage current Planar termination structure High operating temperature capability (Tj (max) = 175°C) Higher IFSM capability 3. Applications • • • Switched-Mode Power Supplies Power factor correction diode Uninterrupted Power Supply 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating VRRM repetitive peak reverse voltage 1200 V IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 141 °C; Fig. 1; Fig. 2; Fig. 3 5 A IFRM repetitive peak forward current δ = 0.5 ; tp = 25 μs; Tmb ≤ 141 °C; square-wave pulse 10 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 55 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse 60 A Symbol Parameter Conditions Min Typ Max Unit IF = 5 A; Tj = 25 °C; Fig. 6 - 2.4 3.2 V IF = 5 A; Tj = 150 °C; Fig. 6 - 2.0 - V IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 7 - 36 - ns Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time BYC5-1200P WeEn Semiconductors Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 mb A mb anode mounting base; connected to cathod K A 001aaa020 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description BYC5-1200P TO-220AC Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC Version SOD59 7. Marking Table 4. Marking codes Type number Marking codes BYC5-1200P BYC5-1200P BYC5-1200P Product data sheet All information provided in this document is subject to legal disclaimers. 12 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 2 / 10 BYC5-1200P WeEn Semiconductors Hyperfast power diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Values Unit repetitive peak reverse voltage 1200 V VRWM crest working reverse voltage 1200 V VR reverse voltage DC 1200 V IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 141 °C; Fig. 1; Fig. 2; Fig. 3 5 A IFRM repetitive peak forward current δ = 0.5 ; tp = 25 μs; Tmb ≤ 141 °C; square-wave pulse 10 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 55 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse 60 A Tstg storage temperature -65 to 175 °C Tj junction temperature 175 °C Ptot (W) auf12-001 24 Ptot (W) δ=1 20 auf12-002 16 a = 1.57 1.9 2.2 12 2.8 0.5 16 4.0 0.2 12 8 0.1 8 4 4 0 0 0 1 2 3 4 5 6 7 8 IF(AV) (A) IF(AV) = IF(RMS) × √δ Vo = 2.101 V; Rs = 0.1025 Ω Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values BYC5-1200P Product data sheet 0 1 2 3 4 5 IF(AV) (A) a = form factor = IF(RMS) / IF(AV) Vo = 2.101 V; Rs = 0.1025 Ω Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 12 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 3 / 10 BYC5-1200P WeEn Semiconductors Hyperfast power diode IF(AV) (A) auf12-004 104 IFSM (A) auf12-003 6 141°C IFSM IF 5 t tp Tj(init) = 25 °C max 103 4 3 102 2 1 0 -50 0 50 100 Fig. 3. Forward current as a function of mounting base temperature; maximum values BYC5-1200P Product data sheet 10 10-5 150 200 Tmb (°C) 10-4 10-3 tp (s) 10-2 Fig. 4. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 12 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 4 / 10 BYC5-1200P WeEn Semiconductors Hyperfast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient free air Fig. 5 in free air Min Typ Max Unit - - 2.2 K/W - 60 - K/W auf12-005 10 Zth(j-mb) (K/W) δ = 0.5 δ = 0.3 δ = 0.1 δ = 0.05 1 P 10-1 10-5 δ = 0.02 δ = 0.01 single pulse 10-4 δ= tp 10-3 10-2 10-1 1 tp T t T tp (s) 10 Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BYC5-1200P Product data sheet All information provided in this document is subject to legal disclaimers. 12 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 5 / 10 BYC5-1200P WeEn Semiconductors Hyperfast power diode 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 5 A; Tj = 25 °C; Fig. 6 - 2.4 3.2 V IF = 5 A; Tj = 150 °C; Fig. 6 - 2.0 - V VR = 1200 V; Tj = 25 °C - - 100 μA VR = 1200 V; Tj = 150 °C - - 0.5 mA IF = 5 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 - 151 - nC IF = 5 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 - 299 - nC IF = 5 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 - 326 - nC IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 7 - 36 - ns IF = 5 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 - 42 - ns IF = 5 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 - 63 - ns IF = 5 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 - 72 - ns IF = 5 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 - 7.2 - A IF = 5 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 - 8.7 - A IF = 5 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 - 9.0 - A Static characteristics VF forward current IR reverse current Dynamic characteristics Qr reverse charge trr reverse recovery time IRM peak reverse recovery current IF (A) auf12-006 10 IF dlF dt 8 trr 6 time (2) (1) (3) 25 % 4 100 % Qr 2 IR IRM 003aac562 0 0 1 2 3 VF (V) 4 Vo = 2.101 V; Rs = 0.1025 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 6. Forward current as a function of forward voltage BYC5-1200P Product data sheet Fig. 7. Reverse recovery definitions; ramp recovery All information provided in this document is subject to legal disclaimers. 12 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 6 / 10 BYC5-1200P WeEn Semiconductors Hyperfast power diode 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 E A A1 P q D1 D H Q b1 L 1 2 c b e 0 5 Dimensions Unit mm max nom min 10 mm scale A A1 b b1(1) c D D1 E 4.7 1.40 0.95 1.7 0.65 15.8 6.8 10.30 4.3 1.15 0.70 1.3 0.45 15.6 6.4 9.65 e H 5.08 (REF) L P Q q 16.25 15.0 3.80 2.6 2.9 15.70 12.5 3.65 2.2 2.7 Note 1. Protruded dambar are included in the dimension. Outline version SOD59 BYC5-1200P Product data sheet sod059_po References IEC JEDEC JEITA European projection Issue date 09-08-25 12-11-27 2-lead TO-220AC All information provided in this document is subject to legal disclaimers. 12 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 7 / 10 BYC5-1200P WeEn Semiconductors Hyperfast power diode Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 12. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Product [short] data sheet Production This document contains the product specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 12 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 8 / 10 BYC5-1200P WeEn Semiconductors Hyperfast power diode Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYC5-1200P Product data sheet All information provided in this document is subject to legal disclaimers. 12 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 9 / 10 BYC5-1200P WeEn Semiconductors Hyperfast power diode 13. Contents 1. General description........................................................1 2. Features and benefits....................................................1 3. Applications....................................................................1 4. Quick reference data......................................................1 5. Pinning information........................................................2 6. Ordering information......................................................2 7. Marking............................................................................2 8. Limiting values...............................................................3 9. Thermal characteristics.................................................5 10. Characteristics.............................................................6 11. Package outline............................................................7 12. Legal information.........................................................8 13. Contents......................................................................10 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 12 October 2017 BYC5-1200P Product data sheet All information provided in this document is subject to legal disclaimers. 12 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 10 / 10