BR2N7002K2
Rev.G Oct.-2022
描述
/
DATA SHEET
Descriptions
SOT-23 塑封封装 N 沟道 MOS 场效应管。
N-CHANNEL MOSFET in a SOT-23 Plastic Package.
特征
/ Features
灵敏的控制级触发电流和很低的维持电流。静电保护达 2KV,无卤产品。
Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV,HF Product.
用途
/
Applications
用作一般的开关和相位控制。
Intended for use in general purpose switching and phase control applications.
内部等效电路
引脚排列
PIN1:G
印章代码
/ Equivalent Circuit
/ Pinning
PIN 2:S
PIN 3:D
/ Marking
Marking
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702K2
1/8
BR2N7002K2
Rev.G Oct.-2022
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Drain-Source Voltage
符号
Symbol
VDSS
数值
Rating
60
单位
Unit
V
VDGR
60
V
ID(Ta=25℃)
300
ID(Ta=85℃)
210
IDM
1200
mA
VGSS
±20
V
Power Dissipation
PD
350
mW
Junction Temperature Range
Tj
Tstg
150
℃
-55~150
℃
RθJA(Steady State)
300
RθJA(t≤5s)
92
Drain-Gate Voltage
Drain Current - Continuous
Drain Current - Pulsed(Note 1)
Gate-Source Voltage - Continuous
Storage Temperature Range
Maximum Junction-to-Ambient(Note 2)
mA
℃/W
Note 1) Pulse Width10us, Duty Cycle 1%
Note 2)Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Drain–Source Breakdown Voltage
符号
Symbol
VDSS
测试条件
Test Conditions
VGS=0
ID=250μA
最小值 典型值 最大值
Min
Typ
Max
60
单位
Unit
V
Zero Gate Voltage Drain Current
IDSS
VGS=0
VDS=60V
1.0
μA
Gate-Source Leakage current
IGSS
VDS=0V
VGS=±20V
±10
μA
RDS(on)(1)
VGS=10V
ID=0.5A
2.3
Ω
RDS(on)(2)
VGS=5V
ID=0.05A
2.7
Ω
VSD
VGS=0V
IS=250mA
1.5
V
VGS(th)
VDS=VGS
ID=250uA
1.0
2.5
V
Yfs
VDS=10V
ID=0.2A
80
VGS=0V,
VDS=20V
f=1MHz,
Static Drain-Source On-Resistance
Drain-Source Diode Forward
Voltage
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
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1.7
1.6
mS
25
50
11
25
2.5
5
pF
0.7
VGS=4.5V, VDS=10V;
ID=200 mA
0.1
0.3
nC
0.1
2/8
BR2N7002K2
Rev.G Oct.-2022
电性能参数
DATA SHEET
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
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符号
Symbol
td(ON)
tr
td(OFF)
tf
测试条件
Test Conditions
VGS =10V,
ID=500mA,
VDD=25V,
RG=25Ω
最小值 典型值 最大值
Min
Typ
Max
6.0
5.8
13.2
单位
Unit
ns
8.9
3/8
BR2N7002K2
Rev.G Oct.-2022
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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4/8
BR2N7002K2
Rev.G Oct.-2022
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
10us
RDS(ON)
limited
100us
1ms
10ms
DC
TJ(Max)=150℃
TA=25℃
Single Pulse
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100ms
1s
5/8
BR2N7002K2
Rev.G Oct.-2022
外形尺寸图
DATA SHEET
/ Package Dimensions
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6/8
BR2N7002K2
Rev.G Oct.-2022
印章说明
/
DATA SHEET
Marking Instructions
702K2
说明:
702K2: 为型号代码
Note:
702K2:
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Product Type
7/8
BR2N7002K2
Rev.G Oct.-2022
DATA SHEET
回流焊温度曲线图(无铅)
/
Temperature Profile for IR Reflow Soldering(Pb-Free)
350
Temperature(℃)
300
245±5℃
250
5±0.5 sec
200
150
60~90 sec
100
50
0
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
Time(sec)
说明:
Note:
1、预热温度 150~180℃,时间 60~90sec;
1.Preheating:150~180℃, Time:60~90sec.
2、峰值温度 245±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:245±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:260±5℃
包装规格
Time:10±1 sec
/ REEL
Package Type
封装形式
使用说明
Temp.:260±5℃
/ Packaging SPEC.
卷盘包装
SOT-23
时间:10±1 sec.
Units 包装数量
Dimension
包装尺寸
(unit:mm3)
Units/Reel
只/卷盘
Reels/Inner Box
卷盘/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Reel
Inner Box 盒
Outer Box 箱
3,000
10
30,000
6
180,000
7〞×8
180×120×180
390×385×205
/ Notices
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