BZT52C7V5S-WC

BZT52C-Series Small Singnal Zener Diodes SOD-323 Plastic-Encapsulate Diodes %=7C9S%=7CS SOD-323 =(1(5 DIODE 0.010 (0.25) 0.019 (0.475) ref. 0.080 (0.0031) 0.018 (0.45) 0.150 (0.0059)  0.108 (2.75) 0.100 (2.55) 8°  0.071(1.80) 0.063(1.60) 0° to  0.047(1.20) 0.008 (0.2 )  0.055(1.40) 0.014(0.35) 0.010(0.25) 0.039 (1.00)  Planar die construction. 7RWDOSRZHUGLVVLSDWLRQ0D[3P: :LGH ]HQHUUHYHUVHYROWDJHUDQJH9WR9 General purpose, medium current . 6PDOOSODVWLFSDFNDJHVXLWDEOHIRUVXUIDFH PRXQWHGGHVLJQ 7ROHUDQFHDSSUR[LPDWHO\“5 0.032 (0.80)  0.008(0.20)max. Cathode bar FEATURES Marking Dimensions in inches and (millimeters) XX= Device code,see table on page2 the marking code The marking bar indicates the cathode Mechanical Data Case : SOD-323 Terminals : Solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.00019 ounce, 0.00548 grams Maximum Ratings(Ta=25 ℃ unless otherwise specified) Characteristic Forward Voltage at IF = 10mA Symbol (Note 2) 0.9 V Pd 20 mW RθJA 17 Tj 150 ℃/W ℃ Tstg -55 ~ +150 ℃ Junction Temperature Storage Temperature Range Unit VF Power Dissipation(Note 1) Typical thermal resistance from junction to ambient(Note 1) Value Notes: 1. Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads. 2.. Short duUDtion test pulse used to minimize self-heating effect 3.. f =kHz DN:T20319A0 http://www.microdiode.com Rev:2020A0 Page :1 BZT52C-Series Small Singnal Zener Diodes ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Dynamic Impedance Zener Voltage Range （1） Type Marking V ZT（at I ZT） Min（V） Reverse Current I ZT Z ZT（at I ZT） IR at V R Max（μA） （V） Nom（V） Max（V） (mA) Max (Ω) BZT52C2V0S WY 1.8 2 2.15 5 100 120 0.5 BZT52C2V2S WZ 2.08 2.2 2.33 5 100 120 0.7 BZT52C2V4S WX 2.28 2.4 2.56 5 100 120 1 BZT52C2V7S W1 2.5 2.7 2.9 5 110 120 1 BZT52C3V0S W2 2.8 3 3.2 5 120 50 1 BZT52C3V3S W3 3.1 3.3 3.5 5 130 20 1 BZT52C3V6S W4 3.4 3.6 3.8 5 130 10 1 BZT52C3V9S W5 3.7 3.9 4.1 5 130 5 1 BZT52C4V3S W6 4 4.3 4.6 5 130 5 1 BZT52C4V7S W7 4.4 4.7 5 5 130 2 1 2 1.5 1 2.5 BZT52C5V1S W8 4.8 5.1 5.4 5 130 BZT52C5V6S W9 5.2 5.6 6 5 80 BZT52C6V2S WA 5.8 6.2 6.6 5 50 1 3 BZT52C6V8S WB 6.4 6.8 7.2 5 30 0.5 3.5 BZT52C7V5S WC 7 7.5 7.9 5 30 0.5 4 BZT52C8V2S WD 7.7 8.2 8.7 5 30 0.5 5 BZT52C9V1S WE 8.5 9.1 9.6 5 30 0.5 6 BZT52C10S WF 9.4 10 10.6 5 30 0.1 7 BZT52C11S WG 10.4 11 11.6 5 30 0.1 8 BZT52C12S WH 11.4 12 12.7 5 35 0.1 9 BZT52C13S WI 12.4 13 14.1 5 35 0.1 10 BZT52C15S WJ 13.8 15 15.6 5 40 0.1 11 BZT52C16S WK 15.3 16 17.1 5 40 0.1 12 BZT52C18S WL 16.8 18 19.1 5 45 0.1 13 BZT52C20S WM 18.8 20 21.2 5 50 0.1 15 BZT52C22S WN 20.8 22 23.3 5 55 0.1 17 BZT52C24S WO 22.8 24 25.6 5 60 0.1 19 BZT52C27S WP 25.1 27 28.9 2 70 0.1 21 BZT52C30S WQ 28 30 32 2 80 0.1 23 BZT52C33S WR 31 33 35 2 80 0.1 25 BZT52C36S WS 34 36 38 2 90 0.1 27 BZT52C39S WT 37 39 41 2 100 0.1 30 BZT52C43S WU 40 43 46 2 130 0.1 33 0.1 36 BZT52C47S WV 44 47 50 2 150 BZT52C51S WW 48 51 54 2 180 0.1 39 BZT52C56S XW 52 56 60 2 200 0.1 43 BZT52C62S 6E 58 62 66 2 215 0.1 47 BZT52C68S 6F 64 68 72 2 240 0.1 52 BZT52C75S 6H 70 75 79 2 265 0.1 56 （1） V ZT is tested with pulses (20 ms) http://www.microdiode.com Rev:2020A0 Page :2 BZT52C-Series Small Singnal Zener Diodes Typical Characterisitics mA 103 mW 500 102 IF 400 10 Ptot TJ = 100 °C 1 300 10-1 TJ = 25 °C 200 10-2 10-3 100 10-4 10-5 0 0.2 0.4 0.6 0.8 0 1V 0 100 VF Fig. 1 - Forward characteristics Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Ω 100 Ω 1000 TJ = 25 °C TJ = 25 °C 5 4 3 2 rzj 200 °C Tamb 5 4 3 rzj 100 5 4 3 33 2 27 22 10 18 2 10 12 3 10 2 2 6.8/8.2 5.6 1 0.1 2 5 1 2 5 10 2 5 100 mA Fig. 3 - Dynamic Resistance vs. Zener Current 0.1 1 5 2 Ω 103 Tj = 25 °C 7 5 4 2 2 Rzth 47 + 51 43 39 36 10 IZ 2 5 100 mA Rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 102 5 4 3 102 2 7 5 4 3 10 5 4 3 2 negative 2 10 0.1 5 Fig. 4 - Dynamic Resistance vs. Zener Current Ω 103 3 6.2 1 IZ Rzj 15 5 4 2.7 3.6 4.7 5.1 5 4 3 positive 1 2 3 4 5 1 2 IZ 3 4 5 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current http://www.microdiode.com 1 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev:2020A0 Page :3 BZT52C-Series Small Singnal Zener Diodes Typical Characterisitics Ω 100 mV/°C 25 7 5 4 Rzj Δ VZ ΔTj 3 20 2 15 10 10 IZ = 5 mA 1 mA 20 mA 7 5 5 4 3 0 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 10 4 5 2 3 4 5 -5 1 100 V 2 3 4 5 Fig. 7 - Dynamic Resistance vs. Zener Voltage V 9 25 0.7 15 VZ at IZ = 5 mA 8 10 0.6 8 43 4 0.2 6.2 5.9 3 0.1 5.6 2 0 51 6 5 7 0.3 VZ at IZ = 2 mA 7 Δ VZ 0.5 0.4 36 1 5.1 0 -1 4.7 3.6 - 0.2 0 20 40 60 80 IZ = 2 mA -1 0 100 120 140 C 20 40 60 80 100 120 140 °C Tj Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature Fig. 10 - Change of Zener Voltage vs. Junction Temperature mV/°C 100 V 1.6 IZ = 5 mA Δ VZ ΔTj 100 V 3 4 5 2 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage V 0.8 Δ VZ 10 VZ at IZ = 5 mA V ≥ 27 V, I = 2 mA VZ Δ VZ = rzth x IZ IZ = 5 mA VZ ≥ 27 V; IZ = 2 mA 1.4 1.2 80 Δ VZ 1 0.8 60 0.6 0.4 40 0.2 0 20 - 0.2 - 0.4 0 0 20 60 40 80 100 V 1 2 3 4 5 Fig. 11 - Temperature Dependence of Zener Voltage vs. Zener Voltage http://www.microdiode.com 10 2 3 4 5 100 V VZ at IZ = 5 mA VZ at IZ = 2 mA Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Rev:2020A0 Page :4 BZT52C-Series Small Singnal Zener Diodes Typical Characterisitics V 5 mA 50 ΔVZ = rzth x IZ 4 Tj = 25 °C 3.9 5.6 2.7 6.8 3.3 4.7 40 lZ Δ VZ 3 8.2 30 IZ = 5 mA 2 20 1 Test current IZ 5 mA 10 IZ = 2.5 mA 0 0 0 20 40 60 80 100 V 0 1 2 3 4 VZ at IZ = 5 mA 5 6 7 8 9 10 V VZ Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mA 30 lZ Fig. 14 - Breakdown Characteristics 10 12 Tj = 25 °C 15 20 18 22 27 Test 10 current IZ 5 mA 33 36 0 0 10 20 30 40 V VZ Fig. 15 - Breakdown Characteristics Test Current IZ 2 mA Fig. 16 - Breakdown Characteristics The curve above is for reference only. http://www.microdiode.com Rev:2020A0 Page :5 BZT52C-Series Small Singnal Zener Diodes Packing information P0 unit:mm P1 d Item E F B A W Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width P D2 T D1 C W1 D Symbol Tolerance A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 SOD-323 2.1 4.0 1.60 1.55 178.00 50.0 13.00 1.75 3.50 4.00 4.00 2.00 0.25 8.15 10.5 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) SOD-323 7" 3,000 4.0 45,000 210*208*203 178 430*430*235 180,000 APPROX. GROSS WEIGHT (kg) Suggested Pad Layout http://www.microdiode.com Symbol Unit (mm) Unit (inch) A 0.028 B 0.7 0.7 C 2.15 0.085 D 1.8 0.071 E 2.85 0.112 0.028 Rev:2020A0 Page :6