BZT52C2V0

BZT52Cxxx Product specification BZT52Cxxx Reference News FEATURES PACKAGE OUTLINE  Planar Die Construction  Ultra-Small Surface Mount Package  General purpose, Medium Current  Ideally Suited for Automated AssemblyProcesses PIN CONFIGURATION SOD-123 Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) Symbol Parameters Power Dissipation Pd 500 Forward Voltage @IF= 10mA Vf 0.9 Storage temperature range Ts -65-+150 ℃ RthA 400 K/W Thermal resistance junction to ambient air Warmewiderstand Sperrschicht –umgebende Luft 1) 2) 3) Unit Value mW 1) V 2) 1) Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm² Short duration test pulse used to minimize self-heating effect f= 1KHz Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Zener Voltage Range Device Marking Vz@ Izt Izt Nom(V) Min(V) Max(V) mA Maximum Zener Impedance Zzk Zzt @Izk @Izt Ω Izk IR VR mA uA V Min Max mA 3) Maximum Reverse Current Typical Temperature coefficent @ IZTC= mV/ ℃ Test Current IZTC BZT52C2V0 WY 2.0 1.80 2.15 5 150 600 1.0 100 1.0 -3.5 0 5 BZT52C2V4 WX 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 Copyright© Msksemi Incorporated www.msksemi.com BZT52Cxxx Maximum Zener Impedance Zener Voltage Range Device Marking Vz@ Izt Izt Nom(V) Min(V) Max(V) mA Zzk @Izk Zzt @Izt Ω Maximum Reverse Current Typical Temperature coefficent @ IZTC= mV/ ℃ Test Current IZTC Izk IR VR mA uA V Min Max mA BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43 WU 43 40.0 46.0 2 100 700 1.0 0.1 32.0 10.0 12.0 5 BZT52C47 WV 47 44.0 50.0 2 100 750 1.0 0.1 35.0 10.0 12.0 5 BZT52C51 WW 51 48.0 54.0 2 125 750 1.0 0.1 38.0 10.0 12.0 5 BZT52C56 XW 56 52.0 60.0 2 135 700 1.0 0.1 39.0 10.0 12.0 5 BZT52C62 6E 62 58.0 66.0 2 200 1000 1.0 0.2 47.0 10.0 12.0 5 BZT52C68 6F 68 64.0 72.0 2 250 1000 1.0 0.2 52.0 10.0 12.0 5 BZT52C75 6H 75 70.0 79.0 2 300 1000 1.0 0.2 57 10.0 12.0 5 Breakdown characteristics at Tj=constant (pulsed) Forward characteristics Copyright© Msksemi Incorporated Admissible power dissipation versus ambient temperature www.msksemi.com BZT52Cxxx Pulse thermal resistance versus pulse duration Dynamic resistance versus Zener current Capacitance versus Zener voltage Dynamic resistance versus Zener current Dynamic resistance versus Zener current Copyright© Msksemi Incorporated Thermal differential resistance versus Zener voltage www.msksemi.com BZT52Cxxx Dynamic resistance versus Zener voltage Temperature dependence of Zener voltage versus Zener voltage Change of Zener voltage versus junction temperature Temperature dependence of Zener voltage versus Zener voltage Change of Zener voltage versus junction temperature Change of Zener voltge from turn-on up to the point of thermal equilibrium versus Zener voltage Copyright© Msksemi Incorporated www.msksemi.com BZT52Cxxx PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E E1 L L1 θ Dimensions In Millimeters Max Min 1.050 1.250 0.000 0.100 1.050 1.150 0.450 0.650 0.080 0.150 1.500 1.700 2.600 2.800 3.550 3.850 0.500 REF 0.250 0.450 0° 8° Dimensions In Inches Min Max 0.041 0.049 0.000 0.004 0.041 0.045 0.018 0.026 0.003 0.006 0.059 0.067 0.102 0.110 0.140 0.152 0.020 REF 0.010 0.018 0° 8° Note: 1.Controllng dlmenslon:in mlllmeters. 2.General tolerance:± 0.05mm. 3.The pad layout Is for reference purposes only. REEL SPECIFICATION P/N PKG QTY BZT52Cxxx SOD-123 3000 Copyright© Msksemi Incorporated www.msksemi.com BZT52Cxxx Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not handle applications that require extremely high levels of reliability, such as life-support have specifications that can systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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