BYT79X-600PQ

BYT79X-600P Ultrafast recovery diode 19 October 2017 Product data sheet 1. General description Ultrafast power diode in a SOD113 (TO-220F) plastic package. 2. Features and benefits • • • • • • • Low on-state loss Ultra low leakage Low switching loss Fast switching Soft recovery characteristic High thermal cycling performance Low thermal resistance 3. Applications • • Home appliance power supply Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VR reverse voltage DC - - 600 V IF(AV) average forward current δ = 0.5 ; Th ≤ 71 °C; square-wave; Fig. 1; Fig. 2; Fig. 3 - - 15 A IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; Th ≤ 71 °C; current square-wave - - 30 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sinusoidal waveform; Fig. 4 - - 150 A tp = 8.3 ms; Tj(init) = 25 °C; sinusoidal waveform - - 165 A IF = 15 A; Tj = 25 °C; Fig. 6 - 1.1 1.38 V IF = 15 A; Tj = 125 °C; Fig. 6 - 0.96 1.25 V IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 7 - 50 60 ns Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time BYT79X-600P WeEn Semiconductors Ultrafast recovery diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode Graphic symbol K mb A 001aaa020 2 A anode mb n.c. mounting base; isolated 1 2 TO-220F (SOD113) 6. Ordering information Table 3. Ordering information Type number BYT79X-600P Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" SOD113 7. Marking Table 4. Marking codes Type number Marking code BYT79X-600P BYT79X-600P BYT79X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 2 / 10 BYT79X-600P WeEn Semiconductors Ultrafast recovery diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current δ = 0.5 ; Th ≤ 71 °C; square-wave; Fig. 1; Fig. 2; Fig. 3 - 15 A IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Th ≤ 71 °C; squarewave - 30 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sinusoidal waveform; Fig. 4 - 150 A tp = 8.3 ms; Tj(init) = 25 °C; sinusoidal waveform - 165 A Tstg storage temperature -65 175 °C Tj junction temperature - 175 °C Ptot (W) aaa029-001 30 δ=1 Ptot (W) 25 aaa029-002 25 a = 1.57 20 0.5 1.9 2.2 20 15 0.2 15 2.8 4.0 0.1 10 10 5 5 0 0 4 8 12 16 0 20 24 IF(AV) (A) IF(AV) = IF(RMS) × √δ Vo = 1.055 V; Rs = 0.013 Ω Product data sheet 2.5 5 7.5 10 12.5 IF(AV) (A) 15 a = form factor = I F(RMS) / IF(AV) Vo = 1.055 V; Rs = 0.013 Ω Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values BYT79X-600P 0 Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 19 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 3 / 10 BYT79X-600P WeEn Semiconductors Ultrafast recovery diode IF(AV) (A) aaa029-003 20 aaa029-004 103 IFSM (A) 71°C 15 102 10 IF IFSM 5 0 -50 0 50 100 150 Th (°C) Fig. 3. Forward current as a function of heatsink temperature; maximum values BYT79X-600P Product data sheet 10 10-5 200 t tp Tj(init) = 25 °C max 10-4 10-3 tp (s) 10-2 Fig. 4. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 19 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 4 / 10 BYT79X-600P WeEn Semiconductors Ultrafast recovery diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; Fig. 5 - - 4.8 K/W Rth(j-a) thermal resistance from junction to ambient free air in free air - 55 - K/W aaa029-005 10 Zth(j-h) (K/W) 1 10-1 P 10-2 t tp 10-3 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse width 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance from cathode to external heatsink - 10 - pF BYT79X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 5 / 10 BYT79X-600P WeEn Semiconductors Ultrafast recovery diode 11. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 15 A; Tj = 25 °C; Fig. 6 - 1.1 1.38 V IF = 15 A; Tj = 125 °C; Fig. 6 - 0.96 1.25 V VR = 600 V; Tj = 25 °C - 1 10 µA VR = 600 V; Tj = 125 °C - 80 200 µA Static characteristics VF forward voltage IR reverse current Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 7 - 50 60 ns IRM peak reverse recovery current IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 100 °C - 3 - A Qr recovered charge IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 7 - 60 - nC IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs; Tj = 25 °C; Fig. 7 - 60 110 nC IF (A) aaa029-006 30 IF dlF dt 25 trr 20 time 15 (2) (1) 25 % (3) 10 5 0 100 % Qr IR IRM 003aac562 0 0.5 1 1.5 VF (V) 2 Vo = 1.055 V; Rs = 0.013 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 7. Reverse recovery definitions; ramp recovery Fig. 6. Forward current as a function of forward voltage BYT79X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 6 / 10 BYT79X-600P WeEn Semiconductors Ultrafast recovery diode 12. Package outline Plastic single- ended package; isolated heatsink m ounted; 1 m ounting hole; 2- lead TO- 220 ‘full pack’ SOD113 A A1 E z(2) P q m T(4) D HE L2 j(3) L1(1) k(3) Q L 1 b1 2 b w c e 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A A1 b b1 c D E e 4.6 2.9 0.9 1.1 0.7 15.8 10.3 4.0 2.5 0.7 0.9 0.4 15.2 9.7 HE max 5.08 19.0 L2 L1(1) max j(3) k(3) L 2.7 0.6 14.4 3.3 1.7 0.4 13.5 2.8 0.5 m P Q 6.5 3.2 2.6 6.3 3.0 2.3 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. 3. Dot lines area designs may vary. 4. Eject pin mark is for reference only. Outline version SOD113 T(4) w z(2) 2.6 2.55 0.4 0.8 sod113_po References IEC q JEDEC JEITA European projection Issue date 07-06-08 15-08-28 2-lead TO-220F Fig. 8. Package outline TO-220F (SOD113) BYT79X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 7 / 10 BYT79X-600P WeEn Semiconductors Ultrafast recovery diode Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 13. Legal information Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BYT79X-600P Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 19 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 8 / 10 BYT79X-600P WeEn Semiconductors Ultrafast recovery diode Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYT79X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 9 / 10 BYT79X-600P WeEn Semiconductors Ultrafast recovery diode 14. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Isolation characteristics.............................................5 11. Characteristics............................................................ 6 12. Package outline.......................................................... 7 13. Legal information....................................................... 8 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 19 October 2017 BYT79X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 10 / 10