BYV430J-600PQ

BYV430J-600P Dual ultrafast power diode 3 May 2017 Product data sheet 1. General description Dual ultrafast power diodes in a TO3PF plastic package. 2. Features and benefits • • • • Very low on-state loss Reduces switching losses in associated MOSFET or IGBT Low leakage current Isolated plastic package 3. Applications • • • Active PFC in air conditioner S.M.P.S Power Factor Correction (PFC) Half-bridge / full-bridge switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VR reverse voltage DC - - 600 V IF(AV) average forward current δ = 0.5 ; Th ≤ 64 °C; square-wave pulse; per diode; Fig. 1; Fig. 2; Fig. 3 - - 30 A IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; square-wave pulse current - - 60 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4 - - 180 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode - - 200 A IF = 30 A; Tj = 25 °C; Fig. 6 - 1.5 2 V IF = 30 A; Tj = 150 °C; Fig. 6 - 1.25 - V IF = 30 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 - 53 90 ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 64 - ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 113 - ns Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time BYV430J-600P WeEn Semiconductors Dual ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode 1 2 K cathode 3 A2 anode 2 mb mb mounting base Simplified outline Graphic symbol mb A1 A2 K sym125 TO3PF 6. Ordering information Table 3. Ordering information Type number BYV430J-600P BYV430J-600P Product data sheet Package Name Description Version TO3PF Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-3P ‘full pack’ TO3PF All information provided in this document is subject to legal disclaimers. 3 May 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 2 / 10 BYV430J-600P WeEn Semiconductors Dual ultrafast power diode 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current δ = 0.5 ; Th ≤ 64 °C; square-wave pulse; per diode; Fig. 1; Fig. 2; Fig. 3 - 30 A IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; square-wave pulse - 60 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4 - 180 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode - 200 A Tstg storage temperature -55 175 °C Tj junction temperature - 175 °C Ptot (W) aab699-001 80 Ptot (W) 48 δ=1 60 0.5 a = 1.57 2.8 36 0.1 2.2 1.9 4.0 0.2 40 24 20 0 aab699-002 60 12 0 10 20 30 0 40 50 IF(AV) (A) IF(AV) = IF(RMS) × √δ Vo = 0.899 V; Rs = 0.0110 Ω Product data sheet 5 10 15 20 25 30 IF(AV) (A) a = form factor = I F(RMS) / IF(AV) Vo = 0.899 V; Rs = 0.0110 Ω Fig. 1. Forward power dissipation as a function of average forward current; square waveform; typical values; per diode BYV430J-600P 0 Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; typical values; per diode All information provided in this document is subject to legal disclaimers. 3 May 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 3 / 10 BYV430J-600P WeEn Semiconductors Dual ultrafast power diode IF(AV) (A) aab699-003 40 aab699-004 104 IFSM (A) 64°C 30 103 20 102 I F 10 IFSM t 0 -50 tp Tj(init) = 25 °C max 0 50 100 150 10 10-5 200 Th (°C) 10-4 10-3 tp (s) 10-2 Fig. 3. Average forward current as a function of heatsink Fig. 4. Non-repetitive peak forward current as a function temperature; typical values; per diode of pulse width; sinusoidal waveform; maximum values; per diode BYV430J-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 May 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 4 / 10 BYV430J-600P WeEn Semiconductors Dual ultrafast power diode 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; per diode; Fig. 5 - 2.4 2.7 K/W with heatsink compound; both diodes conducting - 1.75 2.2 K/W thermal resistance from junction to ambient free air in free air - 35 - K/W Rth(j-a) aab699-005 10 Zth(j-h) (K/W) 1 10-1 δ = 0.5 δ = 0.3 P δ = 0.1 10-2 δ= T δ = 0.05 single pulse 10-3 10-6 tp 10-5 10-4 10-3 tp 10-2 10-1 1 t T tp (s) 10 Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration; maximum values; per diode BYV430J-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 May 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 5 / 10 BYV430J-600P WeEn Semiconductors Dual ultrafast power diode 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 30 A; Tj = 25 °C; Fig. 6 - 1.5 2 V IF = 30 A; Tj = 150 °C; Fig. 6 - 1.25 - V VR = 600 V; Tj = 25 °C - - 10 µA VR = 600 V; Tj = 150 °C - - 500 µA IF = 30 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 - 53 90 ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 64 - ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 113 - ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 7.3 - A IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 13.5 - A IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 245 - nC IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 760 - nC Static characteristics VF forward voltage IR reverse current Dynamic characteristics trr reverse recovery time IRM peak reverse recovery current Qr recovered charge IF (A) aab699-006 80 IF dlF dt 60 trr (1) (3) (2) time 40 25 % IR 0 100 % Qr 20 IRM 003aac562 0 1 2 VF (V) 3 Fig. 7. (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 6. Forward current as a function of forward voltage, per diode BYV430J-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 May 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 6 / 10 BYV430J-600P WeEn Semiconductors Dual ultrafast power diode 10. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-3P 'full pack' TO3PF Fig. 8. Package outline TO3PF BYV430J-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 May 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 7 / 10 BYV430J-600P WeEn Semiconductors Dual ultrafast power diode Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BYV430J-600P Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 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All rights reserved 8 / 10 BYV430J-600P WeEn Semiconductors Dual ultrafast power diode Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYV430J-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 May 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 9 / 10 BYV430J-600P WeEn Semiconductors Dual ultrafast power diode 12. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 5 9. Characteristics..............................................................6 10. Package outline.......................................................... 7 11. Legal information....................................................... 8 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 3 May 2017 BYV430J-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 May 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 10 / 10