RP112x Series
Low Noise 150 mA LDO Regulator
No. EA-258-230718
OUTLINE
The RP112x is a voltage regulator (LDO) with high output voltage accuracy, low-supply current, low Onresistance transistor, low noise output voltage and high ripple rejection. Each IC is composed of the followings:
a voltage reference unit, an error amplifier, a resistor-net for output voltage setting, a current limit circuit, and
a chip enable circuit.
The RP112x features ultra-low noise and its Ripple Rejection is as low as 80 dB at f = 1 kHz, 75 dB at f = 10
kHz and 65 dB at f = 100 kHz. The Output Noise is also as low as Typ. 10 μVrms. It is kept the low level at
any Output Voltage. RP112x is suitable for the power source for the portable music player and RF module that
demands for higher level of noise reduction. SOT-23-5 and SC-88A packages, a 1-mm square DFN(PL)10104 package are available.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Supply Current ...................................................... Typ. 75 µA
Standby Current .................................................... Typ. 0.1 µA
Dropout Voltage .................................................... Typ. 0.20 V (IOUT = 150 mA, VOUT = 2.8 V)
Ripple Rejection .................................................... Typ. 80 dB (f = 1 kHz)
Typ. 75 dB (f = 10 kHz)
Typ. 65 dB (f = 100 kHz)
Output Voltage Accuracy....................................... ±1.0%
Output Voltage Temperature Coefficient ............... Typ. ±30 ppm/°C
Line Regulation ..................................................... Typ. 0.02%/V
Packages .............................................................. DFN(PL)1010-4, SC-88A, SOT-23-5
Input Voltage Range ............................................. 2.0 V to 5.25 V
Output Voltage Range ........................................... 1.2 V to 4.8 V (0.1 V step)
Short Current Limit ................................................ Typ. 40 mA
Built-in Foldback Protection Circuit
Output Noise ......................................................... Typ. 10 μVrms
Ceramic capacitors are recommended to be used with this IC ..... 1.0 µF or more
APPLICATIONS
•
•
•
•
•
•
Power source for portable communication equipment.
Power source for electrical appliances such as cameras, VCRs and camcorders.
Power source for battery-powered equipments.
Power source for electrical home appliances.
Power source for the portable music player
Power source for RF module
1
RP112x
No. EA-258-230718
SELECTION GUIDE
The output voltage, auto-discharge function(1), package for the ICs can be selected at the user’s request.
Selection Guide
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
DFN(PL)1010-4
10,000 pcs
Yes
Yes
RP112Qxx2∗-TR-FE
SC-88A
3,000 pcs
Yes
Yes
RP112Nxx1∗-TR-FE
SOT-23-5
3,000 pcs
Yes
Yes
RP112Kxx1∗-TR
xx: Set output voltage (VSET) is selectable from 1.2 V to 4.8 V in 0.1 V step.
The second decimal point of the voltage is described as below.
1.25 V: RP112x12x∗5
1.85 V: RP112x18x∗5
2.85 V: RP112x28x∗5
∗: Selections of CE pin polarity and Auto-discharge function are as shown below:
(B) CE pin polarity: “H” active, Auto-discharge function: No
(D) CE pin polarity: “H” active, Auto-discharge function: Yes
BLOCK DIAGRAMS
VDD
VOUT
VDD
VOUT
Noise
Reduction
Noise
Reduction
Vref
Vref
Current
Limit
CE
GND
RP112xxxxB Block Diagram
Current
Limit
CE
GND
RP112xxxxD Block Diagram
(1)
Auto-discharge function quickly lowers the output voltage to 0 V by releasing the electrical charge in the external
capacitor when the chip enable signal is switched from the active mode to the standby mode.
2
RP112x
No. EA-258-230718
PIN DESCRIPTIONS
Top View
4
3
Bottom View
3
5
4
(1)
1
2
2
5
4
(mark side)
1
DFN(PL)1010-4 Pin Configuration
1
1
2
(mark side)
3
1
SC-88A Pin Configuration
DFN(PL)1010-4 Pin Description
Pin No.
Symbol
2
3
SOT-23-5 Pin Configuration
Description
1
VOUT
Output Pin
2
GND
Ground Pin
3
CE
Chip Enable Pin ("H" Active)
4
VDD
Input Pin
SC-88A Pin Description
Pin No
4
Symbol
Pin Description
1
VDD
2
GND
Input Pin
3
CE
Chip Enable Pin ("H" Active)
4
NC
No Connection
5
VOUT
Ground Pin
Output Pin
SOT-23-5 Pin Description
Pin No
Symbol
Pin Description
1
VDD
Input Pin
2
GND
3
CE
Chip Enable Pin ("H" Active)
4
NC
No Connection
5
VOUT
Ground Pin
Output Pin
(1) Tab
is GND level (They are connected to the reverse side of this IC). The tab is better to be connected to the GND,
but leaving it open is also acceptable.
3
RP112x
No. EA-258-230718
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings
Symbol
Item
Rating
Unit
VIN
Input Voltage
6.0
V
VCE
Input Voltage (CE Pin)
6.0
V
VOUT
Output Voltage
−0.3 to VIN + 0.3
V
IOUT
Output Current
180
mA
(DFN(PL)1010-4)
PD
Power
Dissipation(1)
SC-88A
SOT-23-5
JEDEC STD. 51-7
Test Land Pattern
Standard
Test Land Pattern
JEDEC STD. 51-7
Test Land Pattern
800
380
mW
660
Tj
Junction Temperature Range
−40 to 125
C
Tstg
Storage Temperature Range
−55 to 125
°C
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent
damages and may degrade the life time and safety for both device and system using the device in the field. The
functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS
Recommended Operating Conditions
Symbol
Item
Rating
Unit
VIN
Input Voltage
2.0 to 5.25
V
Ta
Operating Temperature
−40 to 85
°C
RECOMMENDED OPERATING CONDITIONS
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the recommended
operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And
the semiconductor devices may receive serious damage when they continue to operate over the recommended
operating conditions.
(1)
Refer to POWEWR DISSIPATION for detailed information.
4
RP112x
No. EA-258-230718
ELECTRICAL CHARACTERISTICS
Unless otherwise noted, VIN = 5.25 V (VOUT ≥ 4.1 V), VIN = Set VOUT + 1.0 V (1.5 V < VOUT < 4.1 V),
VIN = 2.5 V (VOUT ≤ 1.5 V), IOUT = 1 mA, CIN = COUT = 1.0 µF
The specifications surrounded by
are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C.
RP112xxxxB/D Electrical Characteristics
Symbol
Item
(Ta = 25°C)
Conditions
Ta = 25°C
VOUT
Output Voltage
−40°C ≤ Ta ≤ 85°C
IOUT
ISS
Supply Current
IOUT = 0 mA
Standby Current
VCE = 0 V
VIN
x1.01
V
VOUT < 2.0 V
−20
+20
mV
VOUT ≥ 2.0 V
x0.985
x1.015
V
VOUT < 2.0 V
−30
+30
mV
Ripple Rejection
−14
80
VOUT < 4.1 V
75
IPD
CE Pull-down Current
VCEH
CE Input Voltage "H"
VCEL
CE Input Voltage "L"
14
mV
100
µA
0.1
1.0
µA
0.02
0.10
%/V
VOUT < 1.7 V
Ripple 0.2 Vp-p,
f = 1 kHz
IOUT = 30 mA,
VIN = 5.25 V
f = 10 kHz
(VOUT ≥ 4.1 V),
VIN = Set VOUT + 1.0 V
f = 100 kHz
(VOUT < 4.1 V)
80
dB
75
65
2.0
Output Voltage
∆VOUT/∆Ta Temperature Coefficient −40°C ≤ Ta ≤ 85°C
Short Current Limit
0
VOUT ≥ 4.1 V
Set VOUT + 0.3 V ≤ VIN
VOUT ≥ 4.1 V
≤ 5.25 V
Set VOUT + 0.5 V ≤ VIN 1.7 V ≤ VOUT
≤ 5.0 V
< 4.1 V
Input Voltage(1)
ISC
mA
Refer to Product-specific Electrical Characteristics
2.2 V ≤ VIN ≤ 5.0 V
RR
Unit
x0.99
1 mA ≤ IOUT ≤ 150 mA
Dropout Voltage
∆VOUT/∆VIN Line Regulation
Max.
150
VDIF
Istandby
Typ.
VOUT ≥ 2.0 V
Output Current
∆VOUT/∆IOUT Load Regulation
Min.
VOUT = 0 V
5.25
V
±30
ppm
/°C
40
mA
0.3
0.6
1.0
µA
V
0.4
V
All test categories were tested on the products under the pulse load condition (Tj ≈ Ta = 25°C) except Output Noise, Ripple
Rejection, and Output Voltage Temperature Coefficient.
(1) The maximum input voltage (Electrical Characteristics) is 5.25 V. If, for any reason the maximum input voltage exceeds
5.25 V, it has to be no more than 5.5 V with 500 hrs of the total operating time.
5
RP112x
No. EA-258-230718
ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise noted, VIN = 5.25 V (VOUT ≥ 4.1 V), VIN = Set VOUT + 1.0 V (1.5 V < VOUT < 4.1 V),
VIN = 2.5 V (VOUT ≤ 1.5 V), IOUT = 1 mA, CIN = COUT = 1.0 µF
The specifications surrounded by
are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C.
RP112xxxxB/D Electrical Characteristics
Symbol
Item
en
RLOW
Output Noise
(Ta = 25°C)
Conditions
BW = 10 Hz to 100 kHz,
IOUT = 30 mA
Auto-discharge Nch Tr.
ON Resistance
VIN = 4.0 V, VCE = 0 V
(RP112xxxxD only)
Min.
Typ.
Max.
Unit
10
µVrms
60
Ω
All test categories were tested on the products under the pulse load condition (Tj ≈ Ta = 25°C) except Output Noise, Ripple
Rejection, and Output Voltage Temperature Coefficient.
6
RP112x
No. EA-258-230718
The specifications surrounded by
are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C.
Product-specific Electrical Characteristics
Product Name
RP112x12xx
RP112x12xx5
RP112x13xx
RP112x14xx
RP112x15xx
RP112x16xx
RP112x17xx
RP112x18xx
RP112x18xx5
RP112x19xx
RP112x20xx
RP112x21xx
RP112x22xx
RP112x23xx
RP112x24xx
RP112x25xx
RP112x26xx
RP112x27xx
RP112x28xx
RP112x28xx5
RP112x29xx
RP112x29xx5
RP112x30xx
RP112x31xx
RP112x31xx5
RP112x32xx
RP112x33xx
RP112x34xx
RP112x35xx
RP112x36xx
RP112x37xx
RP112x38xx
RP112x39xx
RP112x40xx
RP112x41xx
RP112x42xx
RP112x43xx
RP112x44xx
RP112x45xx
RP112x46xx
RP112x47xx
RP112x48xx
Min.
1.180
1.230
1.280
1.380
1.480
1.580
1.680
1.780
1.830
1.880
1.980
2.079
2.178
2.277
2.376
2.475
2.574
2.673
2.772
2.822
2.871
2.921
2.970
3.069
3.119
3.168
3.267
3.366
3.465
3.564
3.663
3.762
3.861
3.960
4.059
4.158
4.257
4.356
4.455
4.554
4.653
4.752
Ta = 25°C
Typ.
1.20
1.25
1.30
1.40
1.50
1.60
1.70
1.80
1.85
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.85
2.90
2.95
3.00
3.10
3.15
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
4.10
4.20
4.30
4.40
4.50
4.60
4.70
4.80
VOUT
Max.
1.220
1.270
1.320
1.420
1.520
1.620
1.720
1.820
1.870
1.920
2.020
2.121
2.222
2.323
2.424
2.525
2.626
2.727
2.828
2.879
2.929
2.980
3.030
3.131
3.182
3.232
3.333
3.434
3.535
3.636
3.737
3.838
3.939
4.040
4.141
4.242
4.343
4.444
4.545
4.646
4.747
4.848
−40°C ≤ Ta ≤ 85°C
Min.
Typ.
Max.
1.20
1.170
1.230
1.25
1.220
1.280
1.270
1.30
1.330
1.370
1.40
1.430
1.470
1.50
1.530
1.570
1.60
1.630
1.70
1.670
1.730
1.80
1.770
1.830
1.820
1.85
1.880
1.870
1.90
1.930
1.970
2.00
2.030
2.069
2.10
2.132
2.20
2.167
2.233
2.30
2.266
2.335
2.364
2.40
2.436
2.463
2.50
2.538
2.561
2.60
2.639
2.660
2.70
2.741
2.80
2.758
2.842
2.85
2.807
2.893
2.857
2.90
2.944
2.906
2.95
2.994
2.955
3.00
3.045
3.054
3.10
3.147
3.15
3.103
3.197
3.20
3.152
3.248
3.251
3.30
3.350
3.349
3.40
3.451
3.448
3.50
3.553
3.546
3.60
3.654
3.70
3.645
3.756
3.80
3.743
3.857
3.842
3.90
3.959
3.940
4.00
4.060
4.039
4.10
4.162
4.137
4.20
4.263
4.30
4.236
4.365
4.40
4.334
4.466
4.433
4.50
4.568
4.531
4.60
4.669
4.630
4.70
4.771
4.728
4.80
4.872
VDIF
Ta = 25°C
Typ.
Max.
0.39
0.80
0.39
0.80
0.37
0.70
0.34
0.60
0.32
0.50
0.32
0.50
0.29
0.41
0.29
0.41
0.29
0.41
0.29
0.41
0.25
0.36
0.25
0.36
0.25
0.36
0.25
0.36
0.25
0.36
0.22
0.31
0.22
0.31
0.22
0.31
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
0.20
0.28
7
RP112x
No. EA-258-230718
APPLICATION INFORMATION
TYPICAL APPLICATIONS
VDD
C1
CE Control
RP112x
CE
VOUT
VOUT
C2
GND
External Components
Symbol
Description
C1 (CIN)
1.0 µF, Ceramic Capacitor, GRM155B31A105KE15, MURATA
C2 (COUT)
1.0 µF, Ceramic Capacitor, GRM155B31A105KE15, MURATA
TECHNICAL NOTES
Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a 1.0 µF or more capacitor C2.
In case of using a tantalum capacitor, the output may be unstable due to inappropriate ESR. Therefore, the
full range of operating conditions for the capacitor in the application should be considered.
PCB Layout
The high impedances of VDD and GND could be a reason for the noise pickup and unstable operation.
Therefore, it is imperative that the impedances of VDD and GND be the lowest possible. Also, place a 1.0 µF
or more capacitor (C1) between VDD pin and GND pin as close as possible to each other.
As for C2 output capacitor that is used for phase compensation, place it between VOUT pin and GND as close
as possible to each other (Refer to TYPICAL APPLICATIONS).
8
RP112x
No. EA-258-230718
TYPICAL CHARACTERISTICS
Typical Characteristics are intended to be used as reference data; they are not guaranteed.
1) Output Voltage vs. Output Current (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF, Ta = 25°C)
RP112x28xx
1.4
3.2
1.2
2.8
1.0
Output Voltage VOUT (V)
Output Voltage VOUT (V)
RP112x12xx
VIN=2.0V
VIN=3.0V
0.8
VIN=4.0V
0.6
VIN=5.25V
0.4
0.2
2.0
VIN=3.1V
1.6
VIN=3.8V
VIN=4.1V
1.2
VIN=4.8V
0.8
VIN=5.25V
0.4
0
0
0
50
100
150
200
250
300
0
50
100
150
200
Output Current IOUT (mA)
Output Current IOUT (mA)
RP112x40xx
RP112x48xx
250
300
250
300
5.4
4.5
4.8
4.0
3.5
3.0
VIN=4.3V
2.5
VIN=4.5V
Output Voltage VOUT (V)
Output Voltage VOUT (V)
2.4
VIN=4.8V
2.0
VIN=5.25V
1.5
1.0
4.2
3.6
VIN=5.25V
3.0
2.4
1.8
1.2
0.6
0.5
0
0
0
50
100
150
200
250
300
0
50
100
150
200
Output Current IOUT (mA)
Output Current IOUT (mA)
2) Output Voltage vs. Input Voltage (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF, Ta = 25°C)
RP112x28xx
1.4
3.2
1.2
2.8
1.0
0.8
0.6
0.4
IOUT= 1mA
IOUT=30mA
IOUT=50mA
0.2
Output Voltage VOUT (V)
Output Voltage VOUT (V)
RP112x12xx
2.4
2.0
1.6
1.2
0.8
IOUT= 1mA
IOUT=30mA
IOUT=50mA
0.4
0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN (V)
Input Voltage VIN (V)
9
RP112x
No. EA-258-230718
RP112x40xx
RP112x48xx
5.4
4.0
4.8
3.5
4.2
3.0
2.5
IOUT= 1mA
2.0
IOUT=30mA
1.5
IOUT=50mA
1.0
Output Voltage VOUT (V)
Output Voltage VOUT (V)
4.5
3.6
3.0
2.4
1.8
IOUT= 1mA
1.2
0.5
0.6
0
0
IOUT=30mA
IOUT=50mA
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN (V)
Input Voltage VIN (V)
3) Supply Current vs. Input Voltage (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF, Ta = 25°C)
RP112x28xx
100
100
90
90
80
80
Supply Current ISS (µA)
Supply Current ISS (µA)
RP112x12xx
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN (V)
Input Voltage VIN (V)
RP112x40xx
RP112x48xx
100
100
90
80
Supply Current ISS (µA)
Supply Current ISS (µA)
90
70
60
50
40
30
20
80
70
60
50
40
30
20
10
10
0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN (V)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN (V)
10
RP112x
No. EA-258-230718
4) Output Voltage vs. Temperature (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF, IOUT = 1 mA)
RP112x12xx
RP112x28xx
VIN=2.2V
VIN=3.8V
2.85
1.24
2.84
1.23
2.83
Output Voltage VOUT (V)
Output Voltage VOUT (V)
1.25
1.22
1.21
1.20
1.19
1.18
1.17
2.82
2.81
2.80
2.79
2.78
2.77
2.76
1.16
2.75
1.15
-50
-25
0
25
50
75
-50
100
-25
RP112x40xx
25
50
75
100
RP112x48xx
VIN=5.0V
4.05
VIN=5.25V
4.85
4.04
4.84
4.03
4.83
Output Voltage VOUT (V)
Output Voltage VOUT (V)
0
Temperature Topt (ﾟC)
Temperature Topt (ﾟC)
4.02
4.01
4.00
3.99
3.98
3.97
4.82
4.81
4.80
4.79
4.78
4.77
4.76
3.96
4.75
3.95
-50
-25
0
25
50
75
-50
100
-25
0
25
50
75
100
Temperature Topt (ﾟC)
Temperature Topt (ﾟC)
5) Supply Current vs. Temperature (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF, IOUT = 0 mA)
RP112x12xx
RP112x28xx
VIN=2.2V
VIN=3.8V
80
75
Supply Current ISS (µA)
Supply Current ISS (µA)
80
70
65
60
55
75
70
65
60
55
50
50
-50
-25
0
25
50
Temperature Topt (ﾟC)
75
100
-50
-25
0
25
50
75
100
Temperature Topt (ﾟC)
11
RP112x
No. EA-258-230718
RP112x40xx
RP112x48xx
VIN=5.0V
VIN=5.25V
100
95
75
Supply Current ISS (µA)
Supply Current ISS (µA)
80
70
65
60
55
90
85
80
75
70
65
60
55
50
50
-50
-25
0
25
50
75
-50
100
-25
0
25
50
75
100
Temperature Topt (ﾟC)
Temperature Topt (ﾟC)
6) Dropout Voltage vs. Output Current (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF)
RP112x12xx
RP112x28xx
250
500
400
Dropout Voltage VDIF (mV)
Dropout Voltage VDIF (mV)
450
85ﾟC
25ﾟC
-40ﾟC
350
300
250
200
150
100
200
85ﾟC
25ﾟC
-40ﾟC
150
100
50
50
0
0
0
50
100
150
0
50
100
Output Current IOUT (mA)
Output Current IOUT (mA)
RP112x40xx
RP112x48xx
150
200
250
Dropout Voltage VDIF (mV)
Dropout Voltage VDIF (mV)
180
200
85ﾟC
25ﾟC
-40ﾟC
150
100
50
160
85ﾟC
25ﾟC
-40ﾟC
140
120
100
80
60
40
20
0
0
0
50
100
Output Current IOUT (mA)
150
0
50
100
150
Output Current IOUT (mA)
12
RP112x
No. EA-258-230718
7) Dropout Voltage vs. Set Output Voltage (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF, Ta = 25°C)
400
Dropout Voltage VDIF (mV)
350
150mA
50mA
30mA
1mA
300
250
200
150
100
50
0
0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2
Set Output Voltage VREG (V)
8) Dropout Voltage vs. Temperature (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF)
RP112x12xx
250
500
400
Dropout Voltage VDIF (mV)
150mA
100mA
50mA
450
Dropout Voltage VDIF (mV)
RP112x28xx
350
300
250
200
150
100
150mA
100mA
50mA
200
150
100
50
50
0
0
-50
-25
0
25
50
75
100
-50
25
50
Temperature Topt (ﾟC)
RP112x40xx
RP112x48xx
200
150
100
50
75
100
75
100
150mA
100mA
50mA
180
150mA
100mA
50mA
Dropout Voltage VDIF (mV)
Dropout Voltage VDIF (mV)
0
Temperature Topt (ﾟC)
250
200
-25
160
140
120
100
80
60
40
20
0
0
-50
-25
0
25
50
Temperature Topt (ﾟC)
75
100
-50
-25
0
25
50
Temperature Topt (ﾟC)
13
RP112x
No. EA-258-230718
9) Ripple Rejection vs. Input Voltage (C1 = none, C2 = Ceramic 1.0 µF, Ripple = 0.2 Vp-p, Ta = 25°C)
RP112x12xx
IOUT=1mA
120
110
100
90
80
70
60
50
40
30
20
10
0
Ripple Rejection RR (dB)
Ripple Rejection RR (dB)
RP112x12xx
f=100Hz
f=1kHz
f=10kHz
f=100kHz
1.0
1.5
2.0 2.5
3.0
3.5
4.0 4.5
IOUT=30mA
120
110
100
90
80
70
60
50
40
30
20
10
0
5.0
f=100Hz
f=1kHz
f=10kHz
f=100kHz
1.0
1.5
2.0 2.5
Input Voltage VIN (V)
IOUT=1mA
f=100Hz
f=1kHz
f=10kHz
f=100kHz
2.5
3.0
3.5
4.0
4.5
5.0
2.5
3.0
3.5
Ripple Rejection RR (dB)
Ripple Rejection RR (dB)
4.5
5.0
RP112x40xx
f=100Hz
f=1kHz
f=10kHz
f=100kHz
4.6
4.0
Input Voltage VIN (V)
IOUT=1mA
4.3
5.0
f=100Hz
f=1kHz
f=10kHz
f=100kHz
RP112x40xx
4.0
4.0 4.5
IOUT=30mA
120
110
100
90
80
70
60
50
40
30
20
10
0
Input Voltage VIN (V)
120
110
100
90
80
70
60
50
40
30
20
10
0
3.5
RP112x28xx
Ripple Rejection RR (dB)
Ripple Rejection RR (dB)
RP112x28xx
120
110
100
90
80
70
60
50
40
30
20
10
0
3.0
Input Voltage VIN (V)
4.9
Input Voltage VIN (V)
5.2
IOUT=30mA
120
110
100
90
80
70
60
50
40
30
20
10
0
f=100Hz
f=1kHz
f=10kHz
f=100kHz
4.0
4.3
4.6
4.9
5.2
Input Voltage VIN (V)
14
RP112x
No. EA-258-230718
10) Ripple Rejection vs. Output Current (C1 = none, C2 = Ceramic 1.0µF, Ripple = 0.2 Vp-p, Ta = 25°C)
RP112x12xx
RP112x28xx
VIN=2.2V
110
90
Ripple Rejection RR (dB)
Ripple Rejection RR (dB)
100
80
70
60
50
40
f=100Hz
f=1kHz
f=10kHz
f=100kHz
30
20
10
0
0
50
100
VIN=3.8V
120
110
100
90
80
70
60
50
40
30
20
10
0
150
f=100Hz
f=1kHz
f=10kHz
f=100kHz
0
50
Output Current IOUT (mA)
100
150
Output Current IOUT (mA)
RP112x40xx
VIN=5.0V
110
Ripple Rejection RR (dB)
100
90
80
70
60
50
40
f=100Hz
f=1kHz
f=10kHz
f=100kHz
30
20
10
0
0
50
100
150
Output Current IOUT (mA)
11) Ripple Rejection vs. Frequency (C1 = none, C2 = Ceramic 1.0 µF, Ripple = 0.2 Vp-p, Ta = 25°C)
RP112x28xx
VIN=2.2V
120
110
100
90
80
70
60
50
40
30
20
10
0
Ripple Rejection RR (dB)
Ripple Rejection RR (dB)
RP112x12xx
1mA
30mA
50mA
100mA
150mA
0.1
1
10
Frequency f (kHz)
100
1000
VIN=3.8V
120
110
100
90
80
70
60
50
40
30
20
10
0
1mA
30mA
50mA
100mA
150mA
0.1
1
10
100
1000
Frequency f (kHz)
15
RP112x
No. EA-258-230718
RP112x40xx
VIN=5.0V
120
110
Ripple Rejection RR (dB)
100
90
80
70
60
50
40
30
1mA
30mA
50mA
100mA
150mA
20
10
0
0.1
1
10
100
1000
Frequency f (kHz)
12) Output Spectral Noise Density vs. Frequency (C1 = none, C2 = Ceramic 1.0 µF, Ta = 25°C)
RP112x28xx
VIN=2.2V
1.4
1.2
1.0
0.8
0.6
150mA
30mA
0.4
0.2
0
0.01
0.1
1
10
Output Spectral Noise Density µV/√Hz(V)
Output Spectral Noise Density µV/√Hz(V)
RP112x12xx
100
VIN= 3.8V
1.4
1.2
1.0
0.8
0.6
150mA
30mA
0.4
0.2
0
0.01
0.1
Frequency f (kHz)
1.4
1.2
1.0
0.8
0.6
150mA
30mA
0.4
0.2
0
0.1
1
Frequency f (kHz)
10
100
RP112x48xx
VIN=5.0V
10
100
Output Spectral Noise Density µV/√Hz (V)
Output Spectral Noise Density µV/√Hz(V)
RP112x40xx
0.01
1
Frequency f (kHz)
VIN=5.25V
1.4
1.2
1.0
0.8
0.6
150mA
30mA
0.4
0.2
0
0.01
0.1
1
10
100
Frequency f (kHz)
16
RP112x
No. EA-258-230718
13) Input Transient Response (C1 = none, C2 = Ceramic 1.0 µF, IOUT = 30mA, tr = tf = 5.0 µs, Ta = 25°C)
RP112x12xx
RP112x28xx
3.5
5.0
1.5
1.0
1.205
1.200
1.195
Output Voltage
1.190
2.5
2.805
2.800
2.795
Output Voltage
2.785
10
20
30
40
50
60
70
80
90 100
0
10
20
30
Time t (µs)
60
70
80
90 100
RP112x48xx
5.0
4.0
Input Voltage
4.5V ⇔ 5.25V
3.5
3.0
4.005
4.000
Output Voltage
Output Voltage VOUT (V)
5.5
5.0
Input Voltage VIN (V)
5.5
4.5
3.990
50
Time t (µs)
RP112x40xx
3.995
40
4.5
Input Voltage
5.0V ⇔ 5.25V
4.0
3.5
3.0
4.805
4.800
4.795
Input Voltage VIN (V)
0
Output Voltage VOUT (V)
3.5
3.0
2.790
1.185
4.0
Input Voltage
3.8V ⇔ 4.8V
Input Voltage VIN (V)
2.0
4.5
Output Voltage VOUT (V)
2.5
Input Voltage
2.2V ⇔ 3.2V
Input Voltage VIN (V)
Output Voltage VOUT (V)
3.0
Output Voltage
4.790
3.985
0
10
20
30
40
50
60
70
80
4.785
90 100
0
Time t (µs)
10
20
30
40
50
60
70
80
90 100
Time t (µs)
14) Load Transient Response (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF, tr = tf = 0.5 µs, Ta = 25°C)
RP112x12xx
50
0
1.22
1.20
Output Voltage
1.18
1.16
Output Voltage VOUT (V)
100
Output Current
50mA ⇔ 100mA
VIN=2.2V
150
Output Current IOUT (mA)
Output Voltage VOUT (V)
VIN=2.2V
Output Current
1mA ⇔ 150mA
300
150
0
1.25
1.20
Output Voltage
1.15
Output Current IOUT (mA)
RP112x12xx
1.10
0
10
20
30
40
50
60
Time t (µs)
70
80
90 100
0
20
40
60
80 100 120 140 160 180 200
Time t (µs)
17
RP112x
No. EA-258-230718
RP112x28xx
50
Output Current
50mA ⇔ 100mA
0
2.80
Output Voltage
2.78
Output Voltage VOUT (V)
100
2.82
VIN=3.8V
150
Output Current IOUT (mA)
Output Current
1mA ⇔ 150mA
0
2.85
2.80
Output Voltage
2.75
10
20
30
40
50
60
70
80
0
90 100
20
40
60
RP112x40xx
RP112x40xx
VIN=5.0V
4.00
Output Voltage
Output Voltage VOUT (V)
0
Output Current IOUT (mA)
50
Output Current
50mA ⇔ 100mA
3.98
VIN=5.0V
150
100
4.02
80 100 120 140 160 180 200
Time t (µs)
Time t (µs)
Output Current
1mA ⇔ 150mA
300
150
0
4.05
4.00
Output Voltage
3.95
Output Current IOUT (mA)
0
Output Voltage VOUT (V)
150
2.70
2.76
3.90
3.96
0
10
20
30
40
50
60
70
80
0
90 100
20
40
60
RP112x48xx
RP112x48xx
50
0
4.80
Output Voltage
4.75
Output Voltage VOUT (V)
100
Output Current
50mA ⇔ 100mA
VIN=5.25V
150
Output Current IOUT (mA)
VIN=5.25V
4.85
80 100 120 140 160 180 200
Time t (µs)
Time t (µs)
Output Voltage VOUT (V)
300
Output Current
1mA ⇔ 150mA
300
150
0
4.85
4.80
Output Voltage
4.75
Output Current IOUT (mA)
Output Voltage VOUT (V)
VIN=3.8V
Output Current IOUT (mA)
RP112x28xx
4.70
4.70
0
10
20
30
40
50
60
Time t (µs)
70
80
90 100
0
20
40
60
80 100 120 140 160 180 200
Time t (µs)
18
RP112x
No. EA-258-230718
15) Turn on Speed with CE pin (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF, Ta = 25°C)
RP112x12xx
RP112x28xx
VIN=3.8V
3
6
Output Voltage
1.2
IOUT= 0mA
IOUT=30mA
IOUT=150mA
0.8
0.4
3.0
Output Voltage
1.8
1.2
IOUT= 0mA
IOUT=30mA
IOUT=150mA
0
0.0
0
50
100
150
200
250
0
50
RP112x40xx
2
5
0
4
Output Voltage
IOUT= 0mA
IOUT=30mA
IOUT=150mA
Output Voltage VOUT (V)
CE Input Voltage
0V ⇒ 5.0V
CE Input Voltage VCE (V)
Output Voltage VOUT (V)
200
250
VIN=5.25V
6
4
1
150
RP112x48xx
VIN=5.0V
2
100
Time t (µs)
Time t (µs)
3
0
2.4
0.6
0.00
2
CE Input Voltage
0V ⇒ 3.8V
4
CE Input Voltage
0V ⇒ 5.25V
2
5
0
4
Output Voltage
3
2
IOUT= 0mA
IOUT=30mA
IOUT=150mA
1
0
6
CE Input Voltage VCE (V)
1.6
0
Output Voltage VOUT (V)
1
CE Input Voltage
0V ⇒ 2.2V
4
CE Input Voltage VCE (V)
Output Voltage VOUT (V)
2
CE Input Voltage VCE (V)
VIN=2.2V
0
0
50
100
150
200
0
250
50
100
150
200
250
Time t (µs)
Time t (µs)
16) Turn off Speed with CE pin (RP112xxxxB) （C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF, Ta = 25°C）
RP112x12xx
RP112x28xx
2
0
1.6
Output Voltage
1.2
IOUT= 0mA
IOUT=30mA
IOUT=150mA
0.8
0.4
CE Input Voltage
3.8V ⇒ 0V
3.0
0
2.4
Output Voltage
1.8
IOUT= 0mA
IOUT=30mA
IOUT=150mA
1.2
0.6
0
0.0
2
CE Input Voltage VCE (V)
1
6
4
Output Voltage VOUT (V)
CE Input Voltage
2.2V ⇒ 0V
VIN=3.8V
3
CE Input Voltage VCE (V)
Output Voltage VOUT (V)
VIN=2.2V
0
0.0
0
40
80
Time t (s)
120
160
200
0
40
80
120
160
200
Time t (s)
19
RP112x
No. EA-258-230718
RP112x40xB
6
4
CE Input Voltage
5.0V ⇒ 0V
2
5
0
4
Output Voltage
3
IOUT= 0mA
IOUT=30mA
IOUT=150mA
2
1
CE Input Voltage VCE (V)
Output Voltage VOUT (V)
VIN=5.0V
0
0
40
80
120
160
200
Time t (s)
17) Turn off Speed with CE pin (RP112xxxxD) (C1 = Ceramic 1.0 µF, C2 = Ceramic 1.0 µF, Ta = 25°C)
RP112x28xD
1
0
Output Voltage
1.2
IOUT= 0mA
IOUT=30mA
IOUT=150mA
0.8
0.4
Output Voltage VOUT (V)
2
CE Input Voltage
2.2V ⇒ 0V
1.6
VIN=3.8V
3
CE Input Voltage VCE (V)
Output Voltage VOUT (V)
VIN=2.2V
CE Input Voltage
3.8V ⇒ 0V
3.0
6
4
2
0
2.4
Output Voltage
1.8
1.2
IOUT= 0mA
IOUT=30mA
IOUT=150mA
0.6
CE Input Voltage VCE (V)
RP112x12xD
0
0.0
0
0.0
0
200
400
600
0
800 1000 1200
200
400
600
800 1000 1200
Time t (µs)
Time t (µs)
RP112x40xD
6
4
CE Input Voltage
5.0V ⇒ 0V
2
5
0
4
Output Voltage
3
IOUT= 0mA
IOUT=30mA
IOUT=150mA
2
1
CE Input Voltage VCE (V)
Output Voltage VOUT (V)
VIN=5.0V
0
0
200
400
600
800
1000 1200
Time t (µs)
20
RP112x
No. EA-258-230718
18) Inrush Current (C1 = Ceramic 1.0 µF, IOUT = 0 mA, Ta = 25°C)
RP112x12xx
3.5
CE Input Voltage
0V ⇒ 2.2V
2.8
1.2
2.1
Output Voltage
CE
C2=1.0µF
C2=1.5µF
C2=2.2µF
C2=3.3µF
0.4
0
300
200
Output Voltage VOUT (V)
0.8
Inrush Current Irush (mA)
1.6
CE Input Voltage
0V ⇒ 3.8V
1.4
Output Voltage
CE
0.7
C2=1.0µF
0
300
C2=1.5µF
C2=2.2µF
200
100
100
0
0
Inrush Current
Inrush Current
0
30
60
90
120
-100
150
0
30
RP112x40xx
C2=1.0µF
C2=1.5µF
C2=2.2µF
Inrush Current
0
30
60
Time t (µs)
90
120
300
200
Output Voltage VOUT (V)
CE
Inrush Current Irush (mA)
Output Voltage VOUT (V)
4
Output Voltage
0
CE Input Voltage
0V ⇒ 5.25V
5
3
1
-100
150
VIN=5.25V
6
CE Input Voltage
0V ⇒ 5.0V
2
120
RP112x48xx
VIN=5.0V
6
4
90
Time t (µs)
Time t (µs)
5
60
3
Output Voltage
2
CE
C2=1.0µF
C2=1.5µF
C2=2.2µF
1
0
300
200
100
100
0
0
-100
150
Inrush Current
0
30
60
90
120
Inrush Current Irush (mA)
2.0
VIN=3.8V
4.2
Inrush Current Irush (mA)
VIN=2.2V
2.4
Output Voltage VOUT (V)
RP112x28xx
-100
150
Time t (µs)
21
RP112x
No. EA-258-230718
Equivalent Series Resistance vs. Output Current
When using these ICs, consider the following points:
The relations between IOUT (Output Current) and ESR of an output capacitor are shown below.
The conditions when the white noise level is under 40 μV (Avg.) are marked as the hatched area in the graph.
Measurement Conditions
Frequency Band: 10 Hz to 2 MHz
Temperature: −40°C to 85°C
Hatched Area: Noise level is under 40 µV (Avg.)
C1, C2: 1.0 µF or more
RP112x12xx
VIN=2.0V to 5.25V
1000
VIN=2.8V to 5.25V
1000
100
100
10
10
ESR (Ω)
ESR (Ω)
RP112x28xx
1
1
0.1
0.1
0.01
0.01
0
25
50
75
100
125
Output Current IOUT (mA)
150
0
25
50
75
100
125
Output Current IOUT (mA)
150
RP112x40xx
VIN=4.0V to 5.25V
1000
ESR (Ω)
100
10
1
0.1
0.01
0
25
50
75
100
125
Output Current IOUT (mA)
150
22
POWER DISSIPATION
DFN(PL)1010-4
PD-DFN(PL)1010-4-(85125150)-JE-B
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following measurement conditions are based on JEDEC STD. 51.
Measurement Conditions
Item
Environment
Board Material
Board Dimensions
Measurement Conditions
Mounting on Board (Wind Velocity = 0 m/s)
Glass Cloth Epoxy Plastic (Four-Layer Board)
76.2 mm × 114.3 mm × 0.8 mm
Outer Layer (First Layer): Less than 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square
0.2 mm × 21 pcs
Copper Ratio
Through-holes
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Item
Measurement Result
Power Dissipation
Thermal Resistance (ja)
Thermal Characterization Parameter (ψjt)
800 mW
ja = 125°C/W
ψjt = 58°C/W
ja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
1200
1000
Power Dissipation (mW)
1000
800
800
600
400
200
0
0
25
50
75 85 100
Ambient Temperature (°C)
125
150
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C.
Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of
use and the total years of use must be limited as follows:
Total Hours of Use
13,000 hours
Total Years of Use (4 hours/day)
9 years
i
PACKAGE DIMENSIONS
DFN(PL)1010-4
DM-DFN(PL)1010-4-JE-C
DFN(PL)1010-4 Package Dimensions
i
POWER DISSIPATION
SC-88A
Ver. A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following conditions are used in this measurement.
Measurement Conditions
Item
Standard Test Land Pattern
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Double-Sided Board)
Board Dimensions
40 mm × 40 mm × 1.6 mm
Top Side: Approx. 50%
Copper Ratio
Bottom Side: Approx. 50%
Through-holes
φ 0.5 mm × 44 pcs
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Item
Standard Test Land Pattern
Power Dissipation
380 mW
Thermal Resistance (θja)
θja = 263°C/W
Thermal Characterization Parameter (ψjt)
ψjt = 75°C/W
θja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
600
40
475
400
380
300
40
Power Dissipation (mW)
500
200
100
0
0
25
50
75 85 100
125
Ambient Temperature (°C)
150
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C.
Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of
use and the total years of use must be limited as follows:
Total Hours of Use
Total Years of Use (4 hours/day)
13,000 hours
9 years
i
PACKAGE DIMENSIONS
SC-88A
Ver. A
SC-88A Package Dimensions
i
POWER DISSIPATION
SOT-23-5
Ver. A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following measurement conditions are based on JEDEC STD. 51-7.
Measurement Conditions
Item
Measurement Conditions
Environment
Board Material
Mounting on Board (Wind Velocity = 0 m/s)
Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions
76.2 mm × 114.3 mm × 0.8 mm
Outer Layer (First Layer): Less than 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square
φ 0.3 mm × 7 pcs
Copper Ratio
Through-holes
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Item
Measurement Result
Power Dissipation
660 mW
Thermal Resistance (θja)
θja = 150°C/W
Thermal Characterization Parameter (ψjt)
ψjt = 51°C/W
θja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
1000
900
830
Power Dissipation (mW)
800
700
600
660
500
400
300
200
100
0
0
25
50
75 85 100 125
Ambient Temperature (°C)
150
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C.
Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of
use and the total years of use must be limited as follows:
Total Hours of Use
Total Years of Use (4 hours/day)
13,000 hours
9 years
i
SOT-23-5
PACKAGE DIMENSIONS
Ver. A
2.9±0.2
1.1±0.1
1.9±0.2
0.8±0.1
(0.95)
4
1
2
0～0.1
0.2min.
+0.2
1.6-0.1
5
2.8±0.3
(0.95)
3
0.4±0.1
+0.1
0.15-0.05
SOT-23-5 Package Dimensions
i
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13.
The products and the product specifications described in this document are subject to change or discontinuation of production without
notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the
latest information thereon.
The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us.
This product and any technical information relating thereto are subject to complementary export controls (so-called KNOW controls)
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The products listed in this document are intended and designed for use as general electronic components in standard applications (office
equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those
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8-1. Quality Warranty Period
In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be
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measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement,
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When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute
for the defective product or refund the purchase price of the defective product.
Note that such delivery or refund is sole and exclusive remedies to your company for the defective product.
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With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of
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The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the
evaluation stage.
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