NP2N10MR-G

NP2N10MR 100V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2N10MR uses advanced trench technology to provide excellent R DS(ON) , low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G General Features S  V DS =100V，I D =2A R DS(ON) (Typ.)=220mΩ @V GS =10V R DS(ON) (Typ.)=240mΩ @V GS =4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 Application   NP102 PWM applications Load switch Package  SOT-23-3L 1 2 G S Ordering Information Part Number Storage Temperature Package Devices Per Reel NP2N10MR-G -55°C to +150°C SOT-23-3L 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS 100 V Gate-source voltage V GS ±20 V Drain current-continuous@Tj=125℃ -pulse dC ID 2 A I DM 8 A Drain-source Diode forward current Is 2 A Avalanche Current I AS 4.8 A E AS 6.3 mJ Maximum power dissipation PD 1.25 W Operating junction Temperature range Tj -55—150 ℃ Single Pulse Avalanche Energy B Rev.1.0 —Jan.8.2018 1 www.natlinear.com NP2N10MR Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BV DSS V GS =0V, I D =250µA 100 - - V Zero gate voltage drain current I DSS V DS =100V, V GS =0V - - 1 µA Gate-body leakage I GSS V DS =0V, V GS =±20V - - ±100 nA 1.2 1.9 2.5 V - 220 240 240 260 1 - - - 190 - - 22 - - 13 - - 6 - - 10 - - 10 - - 6 - - 5.2 - - 0.75 - - 1.4 - - 0.76 1.16 ON Characteristics Gate threshold voltage V GS(th) Drain-source on-state resistance R DS(ON) Forward transconductance V DS =V GS , I D =250µA G FS V GS =10V, I D =2A V GS =4.5V, I D =2A V DS =5V, I D =1A mΩ S Dynamic Characteristics Input capacitance C ISS Output capacitance C OSS Reverse transfer capacitance C RSS V DS =50V ,V GS =0V f=1.0MHz pF Switching Characteristics Turn-on delay time t D(ON) Rise time V DD =50V R L =39 ohm V GS =10V R G =1ohm tr Turn-off delay time t D(OFF) Fall time tf Total gate charge Qg Gate-source charge Q gs Gate-drain charge Q gd V DS =50V I D =1.3A V GS =10V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage V SD V GS =0V,Is=2A V Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD Maximum Junction-to-Lead Symbol t≤ 10s Steady-State Steady-State R θJA R θJL Typ. Max. 70 90 100 125 62 80 Unit ℃/W 2 A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on T J(MAX) =150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150°C. Ratings are based on low frequency and duty cycles to keep initialT J =25°C. D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. Rev.1.0 —Jan.8.2018 2 www.natlinear.com NP2N10MR Typical Performance Characteristics Rev.1.0 —Jan.8.2018 3 www.natlinear.com NP2N10MR Rev.1.0 —Jan.8.2018 4 www.natlinear.com NP2N10MR Rev.1.0 —Jan.8.2018 5 www.natlinear.com NP2N10MR Package Information  SOT-23-3L θ D b E E1 L 0.2 e c Symbol Dimensions In Millimeters A A2 A1 e1 Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Rev.1.0 —Jan.8.2018 6 www.natlinear.com