BYV430K-300PQ

BYV430K-300P Dual ultrafast power diode 26 September 2018 Product data sheet 1. General description 2x30A, 300V Dual ultrafast power diode in a SOT1259 (3-lead TO-3P) plastic package. 2. Features and benefits • • • • • Low forward voltage drop Fast Switching Soft recovery characteristics High thermal cycling performance Low thermal resistance 3. Applications • • • Telecom power supplies Welding machines Secondary rectification in SMPS 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VR reverse voltage DC - - 300 V IF(AV) average forward current δ = 0.5 ; Tmb ≤ 105 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 - - 30 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4 - - 300 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode - - 330 A IF = 30 A; Tj = 25 °C; Fig. 6 - 1 1.25 V IF = 30 A; Tj = 150 °C; Fig. 6 - 0.85 1 V IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C; Fig. 7 - - 55 ns Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time BYV430K-300P WeEn Semiconductors Dual ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 A1 anode 1 2 K cathode 3 A2 anode 2 mb mb mounting base; connected to cathode Graphic symbol A1 A2 K 1 2 sym125 3 TO3P (SOT1259) 6. Ordering information Table 3. Ordering information Type number BYV430K-300P BYV430K-300P Product data sheet Package Name Description Version TO3P Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO3P SOT1259 All information provided in this document is subject to legal disclaimers. 26 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 11 BYV430K-300P WeEn Semiconductors Dual ultrafast power diode 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 300 V VRWM crest working reverse voltage - 300 V VR reverse voltage DC - 300 V IF(AV) average forward current δ = 0.5 ; Tmb ≤ 105 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 - 30 A IO(AV) average output current δ = 0.5 ; Tmb ≤ 105 °C; square-wave pulse; both diodes conducting - 60 A IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Tmb ≤ 105 °C; square-wave pulse - 60 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4 - 300 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode - 330 A Tstg storage temperature -55 175 °C Tj junction temperature - 175 °C VESD electrostatic discharge voltage - - aaa-018245 50 Ptot (W) Ptot (W) 40 a = 1.57 30 0.5 1.9 2.2 2.8 30 0.2 4.0 20 0.1 20 10 10 0 aaa-018246 40 δ=1 0 10 20 30 0 40 50 IF(AV) (A) IF(AV) = IF(RMS) × √δ Vo = 0.840 V; Rs = 0.006 Ω Product data sheet 10 20 IF(AV) (A) 30 a = form factor = IF(RMS) / IF(AV) Vo = 0.840 V; Rs = 0.006 Ω Fig. 1. Forward power dissipation as a function of average forward current; square waveform; per diode; maximum values BYV430K-300P 0 Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; per diode; maximum values All information provided in this document is subject to legal disclaimers. 26 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 11 BYV430K-300P WeEn Semiconductors Dual ultrafast power diode aaa-018247 40 IF(AV) (A) aaa-018248 104 IFSM (A) 105 °C 30 103 20 102 IF IFSM 10 0 -50 0 50 100 10 10-5 150 200 Tmb (°C) Fig. 3. Average forward current as a function of mounting base temperature; per diode; maximum values BYV430K-300P Product data sheet t tp Tj(init) = 25 °C max 10-4 10-3 tp (s) 10-2 Fig. 4. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; per diode; maximum values All information provided in this document is subject to legal disclaimers. 26 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 11 BYV430K-300P WeEn Semiconductors Dual ultrafast power diode 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base with heatsink compound; per diode; Fig. 5 - 0.8 2 K/W with heatsink compound; both diodes conducting - - 1.2 K/W thermal resistance from junction to ambient free air in free air - 45 - K/W Rth(j-a) aaa-014272 10 Zth(j-mb) (K/W) 1 10-1 δ = 0.5 δ = 0.3 10-2 δ = 0.1 P δ= δ = 0.05 10-3 T single pulse tp 10-4 10-6 tp 10-5 10-4 10-3 10-2 10-1 1 t T tp (s) 10 Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BYV430K-300P Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 11 BYV430K-300P WeEn Semiconductors Dual ultrafast power diode 9. Characteristics Table 6. Characteristics characteristics are per diode unless otherwise stated Symbol Parameter Conditions Min Typ Max Unit IF = 30 A; Tj = 25 °C; Fig. 6 - 1 1.25 V IF = 30 A; Tj = 150 °C; Fig. 6 - 0.85 1 V VR = 300 V; Tj = 25 °C - 0.4 10 µA VR = 300 V; Tj = 150 °C - - 500 µA IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C; Fig. 7 - - 55 ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 33 - ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 62 - ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 5.3 - A IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 10.5 - A IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 89 - nC IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 337 - nC - - - Static characteristics VF IR forward voltage reverse current Dynamic characteristics trr IRM Qr VFR reverse recovery time peak reverse recovery current recovered charge forward recovery voltage BYV430K-300P Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 11 BYV430K-300P WeEn Semiconductors Dual ultrafast power diode aaa-018249 80 IF IF (A) dlF dt 60 trr time 40 (1) (2) 25 % (3) IR 0 100 % Qr 20 IRM 003aac562 0 0.5 1 1.5 VF (V) 2 Fig. 7. Reverse recovery definitions; ramp recovery Vo = 0.840 V; Rs = 0.006 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 6. Forward current as a function of forward voltage, per diode BYV430K-300P Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 11 BYV430K-300P WeEn Semiconductors Dual ultrafast power diode 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO3P SOT1259 D D1 A c1 D2 H Ø2 Ø1 E3 E E2 E1 L1 b2 b1 1 2 L2 3 b A1 e c 0 5 Dimensions (mm are the original dimensions) Unit max nom min mm 10 mm scale A A1 b b1 b2 c c1 D D1 D2 5.0 1.6 1.2 3.2 2.2 0.75 1.65 15.8 13.8 9.8 4.6 1.2 0.8 2.8 1.8 0.55 1.45 15.4 13.4 9.4 e E E1 E2 E3 H 20.1 14.1 18.9 17.06 5.2 5.45 (typ) 19.7 13.7 18.5 16.46 4.8 L1 L2 Ø1 Ø2 3.7 20.3 3.5 3.3 3.3 19.7 3.3 3.1 sot1259_po Outline version SOT1259 References IEC JEDEC JEITA European projection Issue date 14-10-21 14-10-22 TO3P Fig. 8. Package outline TO3P (SOT1259) BYV430K-300P Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 11 BYV430K-300P WeEn Semiconductors Dual ultrafast power diode Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors. In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. BYV430K-300P Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 26 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 11 BYV430K-300P WeEn Semiconductors Dual ultrafast power diode Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYV430K-300P Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 11 BYV430K-300P WeEn Semiconductors Dual ultrafast power diode 12. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 5 9. Characteristics..............................................................6 10. Package outline.......................................................... 8 11. Legal information....................................................... 9 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 26 September 2018 BYV430K-300P Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 11