VS3640DS

VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET Features V DS 30 V  Dual N-Channel，5V Logic Level Control R DS(on),TYP@ VGS=10 V 16 mΩ  Enhancement mode R DS(on),TYP@ VGS=4.5 V 24 mΩ  Fast Switching ID 9 A  High Effective SOP8  Pb-free lead plating; RoHS compliant; Halogen-Free Part ID Package Type Marking VS3640DS SOP8 3640DS Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage Unit 30 V TA =25°C 2.3 A TA =25°C 9 A TA =100°C 5.7 A TA =25°C 36 A 9 mJ 2 W ±20 V TA =25°C MSL TSTG Rating Level 3 Storage temperature range -55 to 150 °C Typical Unit 40 °C/W 62.5 °C/W Thermal Characteristics Symbol Parameter RθJL Thermal Resistance-Junction to Lead Rθ JA Thermal Resistance-Junction to Ambient Copyright Vanguard Semiconductor Co., Ltd Rev B – APR, 2018 www.vgsemi.com VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET Typical Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V Zero Gate Voltage Drain Current(Tc=25℃) VDS=30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tc=125℃) VDS=30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1 1.9 2.5 V RDS(ON) Drain-Source On-State Resistance ② VGS=10V, ID=8A -- 16 19 mΩ RDS(ON) Drain-Source On-State Resistance ② VGS=4.5V, ID=4A -- 24 29 mΩ -- 455 -- pF -- 75 -- pF -- 60 -- pF -- 3.3 -- Ω -- 11 -- nC -- 3 -- nC -- 4 -- nC -- 7 -- nS V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V,VGS=0V, f=1MHz f=1MHz VDS=15V,ID=8A, VGS=10V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=8A, -- 10 -- nS t d(off) Turn-Off Delay Time RG=3Ω, -- 22 -- nS tf Turn-Off Fall Time -- 7 -- nS VDD=15V, VGS=10V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) VSD Forward on voltage ISD=8A,VGS=0V -- 0.9 1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=8A, -- 9.5 -- nS Qrr Reverse Recovery Charge VGS=0V di/dt=500A/μs 11.8 nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 6A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev B – APR, 2018 www.vgsemi.com VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig2. Threshold Voltage Vs. Temperature Normalized On Resistance ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev B – APR, 2018 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Transient Thermal Resistance r(t) , Normalized Effective Fig7. Typical Capacitance Vs.Drain-Source Voltage Qg -Total Gate Charge (nC) T1, Square Wave Pulse Duration(sec) Fig9. T1 ,Transient Thermal Response Curve Fig10. Unclamped Inductive Test Circuit and Fig11. Switching Time Test Circuit and waveforms waveforms Copyright Vanguard Semiconductor Co., Ltd Rev B – APR, 2018 www.vgsemi.com VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET Marking Information ，Company Logo 1st line： Company Code（Vs） nd 2 line：Part Number（3640DS） 3rd line：Date code （XXXYWW） LOT：Wafer Lot Number Y：Year Code，e.g. E means 2017 WW：Week Code Copyright Vanguard Semiconductor Co., Ltd Rev B – APR, 2018 www.vgsemi.com VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET SOP8 Package Outline Data Dimensions (unit: mm) Label Min Typ Max A -- -- 1.75 A1 0.10 0.18 0.25 A2 1.25 1.35 1.50 A3 -- 0.25 -- bp 0.36 0.42 0.51 c 0.19 0.22 0.25 D 4.80 4.92 5.00 E 3.80 3.90 4.00 e -- 1.27 -- HE 5.80 6.00 6.20 L -- 1.05 -- Lp 0.40 0.68 1.00 Q 0.60 0.65 0.725 v -- 0.25 -- w -- 0.25 -- y -- 0.10 -- Z 0.30 0.50 0.70 θ 0° 8° Notes: 1. Follow JEDEC MS-012. 2. Dimension "D" does NOT include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15mm per side. 3. Dimension "E" does NOT include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.25mm per side. 4. Dimension "bp" does NOT include dambar protrusion. Allowable dambar protrusion shall be 0.1mm total in excess of "bp" dimension at maximum material condition. The dambar cannot be located on the lower radius of the foot. Customer Service Sales and Service: sales@vgsemi.com Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com Copyright Vanguard Semiconductor Co., Ltd Rev B – APR, 2018 www.vgsemi.com