BSS138

BSS138 N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 3Ω@10V 50V 0.22A 4Ω@4.5V Feature Application ⚫ Advanced trench process technology ⚫ Load Switch for Portable Devices ⚫ High density cell design for ultra low on-resistance ⚫ DC/DC Converter ⚫ Direct logic-level interface：TTL/CMOS Package Circuit diagram SOT-23 Marking SS http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150008 2003/03/08 2022/02/16 I 4 BSS138 N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 0.22 A Pulsed Drain Current IDM 0.7 A Power Dissipation PD 0.35 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 50 V Zero gate voltage drain current IDSS VDS =48V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±5 µA Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 1.6 V Drain-source on-resistance1) RDS(on) 0.8 VGS =10V, ID =0.5A 3 VGS =4.5V, ID =0.2A 4 Ω Dynamic characteristics2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 6 Turn-on delay time td(on) 5 Rise time Turn-off delay time Fall time tr td(off) 27 VDS =25V,VGS =0V,f =1MHz 13 VDD=25V, VGS =10V, ID =0.3A , RGEN=6Ω pF 18 nS 36 15 tf Source-Drain Diode characteristics Diode Forward Current1) Diode Forward voltage IS VDS VGS =0V, IS=0.5A 0.22 A 1.4 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150008 2003/03/08 2022/0 2/16 I 4 BSS138 N-Channel Enhancement Mode MOSFET Test Circuits and Waveforms http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 3 Document ID Issued Date Revised Date Revision Page. AS-3150008 2003/03/08 2022/02 /16 I 4 BSS138 N-Channel Enhancement Mode MOSFET SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.200 0.003 0.008 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 2.000 0.071 e e1 0.950 TYP. 1.800 L L1 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 0.037 TYP. 0.550 REF. 0.300 0.079 0.022 REF. 0.500 Page 4 0.012 0.020 Document ID Issued Date Revised Date Revision Page. AS-3150008 2003/03/08 2022/02 /16 I 4