WSD40L60DN56

WSD40L60DN56 P-Ch MOSFET General Description Product Summery The WSD40L60DN56 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -40V 10mΩ -60A Applications The WSD40L60DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features DFN5x6-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS ±20 V 1 -60 A 1 -35 A -150 A Single Pulse Avalanche Energy 150 mJ Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current 2 3 IAS Avalanche Current -30 A PD@TC=25℃ Total Power Dissipation4 50 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62.5 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 40 ℃/W --- 2.5 ℃/W RθJC www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 Rev1.1.Aug.2022 WSD40L60DN56 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.030 --- V/℃ --- 10 14 --- 14 21 -1.2 -1.7 -2.5 V --- 4.8 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- -1 VDS=-32V , VGS=0V , TJ=55℃ --- --- -5 VGS=-10V , ID=-15A VGS=-4.5V , ID=-10A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-15A --- 25 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 6.5 --- Ω Qg Total Gate Charge (-4.5V) --- 35 --- --- 3.5 --- --- 13 --- Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-15V , VGS=-4.5V , ID=-15A uA nC --- 45 --- Rise Time VDD=-15V , VGS=-10V , RG=6Ω --- 18 --- Turn-Off Delay Time ID=-1A ,RL=15Ω --- 180 --- Fall Time --- 65 --- Ciss Input Capacitance --- 3410 --- Coss Output Capacitance --- 450 --- Crss Reverse Transfer Capacitance --- 228 --- Min. Typ. Max. Unit 100 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-20V , L=0.5mH , IAS=-24A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge --- --- -50 A --- --- -150 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V IF=-15A,dI/dt=100A/µs, TJ=25℃ --- 32 --- nS --- 24 --- nC VG=VD=0V , Force Current Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-20V,VGS=-10V,L=0.5mH,IAS=-24A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev1.1.Aug.2022 WSD40L60DN56 P-Ch MOSFET Typical Characteristics Drain Current 60 70 50 50 -ID - Drain Current (A) Ptot - Power (W) Power Dissipation 40 30 20 40 30 10 10 o o TC=25 C 0 20 40 60 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 300 Lim it 100 100µs Rd s( on ) -ID - Drain Current (A) 0 80 100 120 140 160 10 1ms 10ms o DC TC=25 C 1 0.1 1 10 Normalized Transient Thermal Resistance 0 TC=25 C,VG=-10V 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse 1E-4 1E-6 100 300 o RθJC :2.5 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) -VDS - Drain - Source Voltage (V) www.winsok.tw 2 Page 3 Rev1.1.Aug.2022 WSD40L60DN56 P-Ch MOSFET Typical Characteristics Drain-Source On Resistance Output Characteristics 42 70 VGS=-5,-6,-7,-8,-9,-10V 36 60 RDS(ON) - On - Resistance (mΩ) -ID - Drain Current (A) -4.5V 50 40 -4V 30 20 -3.5V 10 30 VGS=-4.5V 24 18 VGS=-10V 12 6 -3V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 10 -VDS - Drain - Source Voltage (V) 20 30 40 70 Gate Threshold Voltage 1.6 60 IDS= -250µA Normalized Threshold Vlotage IDS=-15A 50 RDS(ON) - On - Resistance (mΩ) 60 -ID - Drain Current (A) Gate-Source On Resistance 40 30 20 10 0 50 1.4 1.2 1.0 0.8 0.6 0.4 2 3 4 5 6 7 8 9 0.2 -50 -25 10 25 50 75 100 125 150 Tj - Junction Temperature (°C) -VGS - Gate - Source Voltage (V) www.winsok.tw 0 Page 4 Rev1.1.Aug.2022 WSD40L60DN56 P-Ch MOSFET Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward 70 2.0 VGS = -10V IDS = -15A 1.6 -IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 0.6 10 o Tj=150 C o Tj=25 C 1 0.4 o RON@Tj=25 C:10mΩ 0.2 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.8 1.0 1.2 1.4 Capacitance Gate Charge 10 Frequency=1MHz VDS= -20V 9 -VGS - Gate-source Voltage (V) 3800 C - Capacitance (pF) 0.6 -VSD - Source - Drain Voltage (V) 4100 Ciss 3500 2200 900 600 0 0.4 Tj - Junction Temperature (°C) 4400 300 0.2 Coss Crss 0 8 16 24 7 6 5 4 3 2 1 32 0 40 0 8 16 24 35 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) www.winsok.tw IDS= -15A 8 Page 5 Rev1.1.Aug.2022 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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