AO3400

AO3400 Rev-1.1 www.elecsuper.com SuperMOS – SOT-23 30V BVDSS,19mΩ RDS(ON),6.0A ID N-channel MOSFET 1. Description The AO3400 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product AO3400 is Pb-free. 2. Features  30V, RDS(ON)=19mΩ(Typ), VGS=10V  Material : Halogen free RDS(ON)=25mΩ(Typ), VGS=4.5V  Reliable and rugged  Use trench MOSFET technology  Avalanche Rated  High density cell design for low RDS(on)  Low leakage current 3. Applications  PWM applications  Power management in portable/desktop PCs  Load switch  DC/DC conversion 4. Ordering Information Part Number Package Marking AO3400 SOT-23 R0 Quantity Flammability per reel Rating Material Packing Halogen Tape & 3,000 free Reel PCS Table-1 Reel Size UL 94V-0 7 inches Ordering information 5. Pin Configuration and Functions Pin Function 1 Gate 2 Source 3 Drain Outline D 3 3 R0 1 2 1 G Table-2 Copyright© ElecSuper Incorporated Circuit Diagram 2 S Pin configuration Contact Us 1 / 7 AO3400 Rev-1.1 www.elecsuper.com 6. Specification Absolute Maximum Rating & Thermal Characteristics Ratings at 25 ℃ ambient temperature unless otherwise specified. Parameter Symbol Limit Unit Drain-Source Voltage BVDSS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current a Maximum Power Dissipation a TA=25°C TA=70°C TA=25°C TA=70°C 6.0 ID A 4.6 1.4 PD W 0.9 Pulsed Drain Current c IDM 30 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Single Operation Parameter Junction-to-Ambient Thermal Resistance Junction-to-Case Thermal Resistance a Symbol Typical Maximum t ≤ 10 s RθJA 75 90 Steady State RθJC 43 70 Unit °C/W Note: a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% Copyright© ElecSuper Incorporated Contact Us 2 / 7 AO3400 Rev-1.1 www.elecsuper.com Electrical Characteristics At TA = 25℃ unless otherwise specified Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 30 V Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 uA Gate-to-source Leakage Current IGSS VDS=0V, VGS=±12V ±100 nA Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250uA 1.0 1.3 V VGS=10V, ID=6.0A 19.0 28.0 Drain-to-source On-resistance RDS(on) VGS=4.5V, ID=5.0A 25.0 33.0 VGS=2.5V, ID=3.0A 33.0 51.0 VDS=5.0V, ID=5.8A 7.8 15 ON CHARACTERISTICS Forward Trans conductance gFS 0.6 mΩ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS VGS=0V, f=1MHz, VDS =10V Output Capacitance COSS Reverse Transfer Capacitance CRSS 48 Total Gate Charge QG(TOT) 6.7 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS=4.5V, VDS=10V, ID =5.8A 550 pF 62 0.75 nC 1.65 1.78 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time tf 3.8 VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω 13.0 ns 14.2 2.0 BODY DIODE CHARACTERISTICS Forward Voltage Copyright© ElecSuper Incorporated VSD VGS=0V, IS=1.0A Contact Us 0.75 1.5 V 3 / 7 AO3400 7. Rev-1.1 www.elecsuper.com Typical Characteristic 30 30 ID - Drain - Source Current (A) VGS=10V VGS=4.5V ID - Drain - Source Current (A) TJ = 25° C Pulse test VGS=3.5V VGS=3.0V 20 VGS=2.5V 10 0 0 1 2 3 4 VDS=5 V 25 20 125C 15 10 -45C 5 0 0.0 5 25C Pulse test 0.5 1.0 VDS - Drain - Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate - Source Voltage (V) Figure 2. Transfer Characteristics Figure 1. Typ. Output Characteristics VGS- Gate-Source Vlotage (V) Capacitance(pF) 1000 100 10 0 5 10 15 VGS = 4.5V 4 Ciss Coss Crss f = 1 MHz VGS=0 V ID = 5.8A 3 2 1 0 20 VDS = 15V 0 1 VDS- Drain-Source Voltage (V) 2 3 4 5 6 7 QG- Total Gate Charge (nC) Figure 3. Capacitance Characteristics Figure 4. Gate Charge Waveform RDSon - ON - Resistance (mdom) IS - Reverse Drain Current (A) 50 10 25° C 125° C 1 0.1 0.4 -45° C 0.6 0.8 1.0 1.2 1.4 1.6 40 VGS=2.5V 30 VGS=4.5V 20 VGS=10V 10 1 5 10 15 20 25 VSD - Source - Drain Voltage (V) ID - Drain - Source Current (A) Figure 5. Body-Diode Characteristics Figure 6. Rdson-Drain Current Copyright© ElecSuper Incorporated Contact Us 30 4 / 7 AO3400 Rev-1.1 www.elecsuper.com 1.8 RDSon - ON - Resistance (mΩ) Normalized On-Resistance 60 1.6 1.4 1.2 1.0 ID=5A 50 125C 40 30 25C 20 0.8 0 25 50 75 100 125 150 2 4 6 8 10 TJ- Temperature(C) VGS - Gate - Source Voltage (V) Figure 7. Rdson-Junction Temperature(℃) Figure 8: On-Resistance vs. Gate-Source VoltageJunction-to100 120 TJ(Max)=150C IDS - Drain- Source Current (A) TA=25C 100 Power (W) 80 60 40 20 0 1E-4 1E-3 0.01 0.1 1 10 10 1 1ms DC 0.1 0.01 0.01 100 10us 100us Pulse Width (s) Figure 9: Single Pulse Power Rating Junction-toAmbient (Note E) Copyright© ElecSuper Incorporated Limited by Rdson 10ms TA=25C 100ms Single Pulse 1s 10s Tj=150C 0.1 1 10 100 VDS - Drain- Source Voltage (V) Figure 10. Maximum Safe Operation Area erating Area Contact Us 5 / 7 AO3400 Rev-1.1 www.elecsuper.com 8. Dimension and Patterns (SOT-23) θ D b L1 3 E1 E 1 2 L e C e1 A1 A Dimensions Symbol Symbol Dimensions Min. Max. A 0.900 1.150 E1 A1 0.900 1.050 e b 0.300 0.500 e1 c 0.080 0.150 L D 2.800 3.00 L1 0.300 0.500 1.200 1.400 θ 0° 8° E Min. Max. 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.60 0.80 2.02 1.90 Note: 1. Controlling dimension: in millimeters 2. General tolerance: ±0.05mm 3. The pad layout is for reference only 4. Unit: mm DISCLAIMER Copyright© ElecSuper Incorporated Contact Us 6 / 7 AO3400 Rev-1.1 www.elecsuper.com ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. 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