FM93C46A/56A/66A
Three-wire Serial EEPROM
Datasheet
Aug. 2017
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
1
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Shanghai Fudan Microelectronics Group Co., Ltd name and logo, the “复旦” logo are trademarks or registered trademarks of
Shanghai Fudan Microelectronics Group Co., Ltd or its subsidiaries in China.
Shanghai Fudan Microelectronics Group Co., Ltd, Printed in the China, All Rights Reserved.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
2
Packaging Type
Description
FM93C46A/56A/66A provides 1k/2k/4k bits of serial electrically
erasable programmable read-only memory (EEPROM),
organized as 64/128/256 words of 16 bits each (when the
ORG pin is connected to VCC), and 128/256/512 words of 8
bits each (when the ORG pin is connected to ground).
PDIP8
The FM93C46A/56A/66A is enabled through the Chip Select
pin (CS) and accessed via a three-wire serial interface
consisting of Data Input (DI), Data Output (DO), and Serial
Clock (SK). Upon receiving a read instruction at DI, the address
is decoded and the data is clocked out serially on the data
output pin DO. The write cycle is completely self-timed and no
separate erase cycle is required before write. The write cycle is
only enabled when the part is in the Erase/Write Enable State.
When CS is brought “high” following the initiation of a write cycle,
The DO pin outputs the Ready/ Busy status of the part.
CS
1
8
VCC
SK
2
7
NC
DI
3
6
ORG
DO
4
5
GND
SOP8
The device is the best choice for use in many industrial
and commercial applications where low-power and
low-voltage operations are essential.
CS
SK
1
2
8
7
VCC
NC
DI
DO
3
4
6
5
ORG
GND
TSSOP8
CS
SK
DI
DO
Features
Three-wire Serial Interface
Low-voltage and Standard-voltage Operation
1.7V～5.5V
2MHz (2.5V) and 1MHz (1.7V) Compatibility
Dual organization: by word (x16) or byte (x8)
Sequential read operation
Programming instructions that work on: byte,
word or entire memory
Self-timed Write Cycle (5 ms max)
READY/ BUSY signal during programming
High Reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 40 Years
PDIP8, (RoHS Compliant)
SOP8, TSSOP8, TDFN8, TSOT23-6L Packages
(RoHS Compliant and Halogen-free)
8
7
6
5
1
2
3
4
VCC
NC
ORG
GND
TSOT23-6L
DO
1
6
VCC
GND
2
5
CS
DI
3
4
SK
TDFN8
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
Pin Configurations
Absolute Maximum Ratings
Pin Name
Operating Temperature
Storage Temperature
Voltage on Any Pin with Respect
to Ground
Maximum Operating Voltage
DC output current
-55°C ～ +125°C
-65°C ～ +150°C
CS
SK
DI
DO
GND
ORG
NC
VCC
-1.0V ～ +7.0V
6.25V
5.0 mA
*NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings”
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of this specification are not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Function
Chip Select
Serial Clock
Serial Data Input
Serial Data Output
Ground
Organization Select
No connect
Power Supply
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
3
Figure 1 Block Diagram
VCC
ORG
GND
EEPROM
Storage array
128/256/512
x 8 OR
64/128/256
x 16
Address
Decoder
Data Register
Read/Write
Amplifiers
DI
CS
SK
Mode Decode
Logic
DO
Clock
Generator
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
4
Memory Organization
The FM93C46A/56A/66A memory is organized either as bytes (x8) or as words (x16). If Organization Select
(ORG) is left unconnected (or connected to VCC) the x16 organization is selected; when Organization Select
(ORG) is connected to Ground (VSS) the x8 organization is selected. When the FM93C46A/56A/66A is in
Standby mode, Organization Select (ORG) should be set either to VSS or VCC for minimum power
consumption. Any voltage between VSS and VCC applied to Organization Select (ORG) may increase the
Standby current.
Memory size versus organization
Device
Number of bits
FM93C66A
4096
FM93C56A
2048
FM93C46A
1024
Number of 8-bit bytes
512
256
128
Number of 16-bit words
256
128
64
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
5
Instruction Set
The instruction set of the FM93C46A/56A/66A devices contains seven instructions, as summarized in the table
below.
Each instruction is preceded by a rising edge on Chip Select Input (CS) with Serial Clock (SK) being held
low.
A start bit, which is the first „1‟ read on Serial Data Input (DI) during the rising edge of Serial Clock (SK).
Two op-code bits, read on Serial Data Input (DI) during the rising edge of Serial Clock (SK). (Some
instructions also use the first two bits of the address to define the op-code).
The address bits of the byte or word that is to be accessed. For the FM93C46A, the address is made up
of 6 bits for the x16 organization or 7 bits for the x8 organization. For the FM93C56A and FM93C66A,
the address is made up of 8 bits for the x16 organization or 9 bits for the x8 organization.
Instruction
READ
EWEN
ERASE
WRITE
ERAL
WRAL
EWDS
Device
Type
SB
FM93C46A
FM93C56A
FM93C66A
FM93C46A
FM93C56A
FM93C66A
FM93C46A
FM93C56A
FM93C66A
FM93C46A
FM93C56A
FM93C66A
FM93C46A
FM93C56A
FM93C66A
FM93C46A
FM93C56A
FM93C66A
FM93C46A
FM93C56A
FM93C66A
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Op
Code
10
10
10
00
00
00
11
11
11
01
01
01
00
00
00
00
00
00
00
00
00
Address
Data
x8
x16
(1) (2)
(1) (3)
A6-A0
A8-A0
A8-A0
11XXXXX
11XXXXXXX
11XXXXXXX
A6-A0
A8-A0
A8-A0
A6-A0
A8-A0
A8-A0
10XXXXX
10XXXXXXX
10XXXXXXX
01XXXXX
01XXXXXXX
01XXXXXXX
00XXXXX
00XXXXXXX
00XXXXXXX
A5-A0
A7-A0
A7-A0
11XXXX
11XXXXXX
11XXXXXX
A5-A0
A7-A0
A7-A0
A5-A0
A7-A0
A7-A0
10XXXX
10XXXXXX
10XXXXXX
01XXXX
01XXXXXX
01XXXXXX
00XXXX
00XXXXXX
00XXXXXX
x8
x16
Comments
Read Address AN–A0
Write Enable
Clear Address AN–A0
D7-D0 D15-D0
D7-D0 D15-D0 Write Address AN–A0
D7-D0 D15-D0
Clear All Addresses
D7-D0 D15-D0
D7-D0 D15-D0 Write All Addresses
D7-D0 D15-D0
Write Disable
Note:
1. X = Don't Care bit.
2. Address bit A8 is not decoded by the FM93C56A.
3. Address bit A7 is not decoded by the FM93C56A.
Functional Description
The FM93C46A/56A/66A is accessed via a simple and versatile three-wire serial communication interface.
Device operation is controlled by seven instructions issued by the host processor. A valid instruction starts
with a rising edge of CS and consists of a start bit (logic “1”) followed by the appropriate op code and the
desired memory address location.
READ (READ): The Read (READ) instruction contains the address code for the memory location to be read.
After the instruction and address are decoded, data from the selected memory location is available at the
serial output pin DO. Output data changes are synchronized with the rising edges of serial clock (SK).. It
should be noted that a dummy bit (logic “0”) precedes the 8- or 16-bit data output string.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
6
ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the Erase/Write Disable
(EWDS) state when power is first applied. An Erase/Write Enable (EWEN) instruction must be executed first
before any programming instructions can be carried out. Please note that once in the EWEN state,
programming remains enabled until an EWDS instruction is executed or VCC power is removed from the part.
ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified memory location to the
logical “1” state. The self-timed erase cycle starts once the ERASE instruction and address are decoded. The
DO pin outputs the Ready/ Busy status of the part if CS is brought high after being kept low for a minimum
of 250 ns (tCS). A logic “1” at pin DO indicates that the selected memory location has been erased, and the part
is ready for another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the
specified memory location. The self-timed programming cycle, tWP, starts after the last bit of data is received
at serial data input pin DI. The DO pin outputs the Ready/ Busy status of the part if CS is brought high
after being kept low for a minimum of 250 ns (tCS). A logic “0” at DO indicates that programming is still in
progress. A logic “1” indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions. A Ready/ Busy status
cannot be obtained if the CS is brought high after the end of the selftimed programming cycle, tWP.
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1”
state and is primarily used for testing purposes. The DO pin outputs the Ready/ Busy status of the part if CS
is brought high after being kept low for a minimum of 250 ns (tCS). The ERAL instruction is valid only at Vcc =
2.5V ~5.5V
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the data patterns
specified in the instruction. The DO pin outputs the Ready/ Busy status of the part if CS is brought high
after being kept low for a minimum of 250 ns (tCS). The WRAL instruction is valid only at Vcc = 2.5V ~5.5V.
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write Disable
(EWDS) instruction disables all programming modes and should be executed after all programming
operations. The operation of the Read instruction is independent of both the EWEN and EWDS instructions
and can be executed at any time.
READY/ BUSY status: While the Write or Erase cycle is underway, for a WRITE, ERASE, WRAL or ERAL
instruction, the Busy signal (DO=0) is returned whenever Chip Select input (CS) is driven high. (Please note,
though, that there is an initial delay, of tCS, before this status information becomes available). In this state, the
FM93C46A/56A/66A ignores any data on the bus. When the Write cycle is completed, and Chip Select Input
(CS) is driven high, the Ready signal (DO=1) indicates that the FM93C46A/56A/66A is ready to receive the
next instruction. Serial Data Output (DO) remains set to 1 until the Chip Select Input (CS) is brought low or
until a new start bit is decoded.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
7
Timing Diagrams
Figure 2 READ Timing
tCS
CS
SK
1
DI
DO
1
0
AN
...
A0
HIGH IMPEDANCE
0
...
DN
D0
Figure 3 EWEN Timing
tCS
CS
SK
DI
1
0
0
1
1
...
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
8
Figure 4 ERASE Timing
tCS
CHECK
STATUS
CS
STANDBY
SK
1
DI
1
AN
1
AN-1
AN-2
...
A0
tSV
DO
HIGH IMPEDANCE
tDF
HIGH IMPENDAMCE
BUSY
READY
tWR
Figure 5 WRITE Timing
tCS
CS
SK
DI
1
DO
HIGH IMPEDANCE
0
1
AN
...
A0
DN
...
D0
BUSY
READY
tWR
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
9
Figure 6 ERAL Timing
tCS
CHECK
STATUS
CS
STANDBY
SK
DI
1
0
0
1
0
tSV
DO
tDF
HIGH IMPEDANCE
BUSY
HIGH IMPENDAMCE
READY
tWR
Figure 7 WRAL Timing
tCS
CS
SK
DI
1
DO
HIGH IMPEDANCE
0
0
0
1
...
DN
...
D0
BUSY
READY
tWR
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
10
Figure 8 EWDS Timing
tCS
CS
SK
DI
1
0
0
0
...
0
Figure 9 BUS Timing
CS
VIH
VIL
tCSS
tSKH
tSKL
tCSH
VIH
SK V
IL
tDIS
tDIH
DI VIH
VIL
tPD1
tPD0
tDF
DO (READ) VOH
VOL
tSV
DO (PROGRAM) VOH
VOL
tDF
STATUS VALID
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
11
Pin Capacitance
Symbol
(1)
CIN
COUT (1)
Parameter
Input Capacitance
Output Capacitance
Test Condition
Max
Units
VIN = 0V, f = 1 MHz
VOUT = 0V, f = 1 MHz
6
8
pF
pF
Note: 1. This parameter is characterized and is not 100% tested.
DC Characteristics
Applicable over recommended operating range from: TA = -40°C to +85°C, VCC = +1.7V to +5.5V, (unless
otherwise noted).
Symbol
Parameter
VCC
Supply Voltage
ICC
Supply
ISB
Standby Current
ILI
ILO
VIL (1)
VIH (1)
Input Leakage
Output Leakage
Input Low Voltage
Input High Voltage
VOL
VOH
Test Condition
VCC = 5.0V, fsk = 2.0 MHz
VCC = 1.7V, fsk = 1.0 MHz
VCC=5V
VCC = 1.7V
0V ≤ VIN ≤ Vcc
0V ≤ VOUT ≤ Vcc ; DO = Hi-Z
VCC = 5V
VCC = 1.7V
VCC = 5V
Output High Voltage
VCC = 1.7V
Output Low Voltage
Min
Max
Units
1.7
5.5
2.0
1.0
15.0
2.0
1.0
1.0
0.2Vcc
VCC+0.5
0.4
0.2
V
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
CS = VIH,
DO =open
CS = SK = GND,
ORG = VCC/GND
-1.0
-1.0
-0.45
0.8VCC
IOL = 2.1 mA
IOL = 100 µA
IOH = -400 µA
IOH = -100 µA
0.8Vcc
VCC-0.2
Note: 1. VIL min and VIH max are reference only and are not tested.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
12
AC Characteristics
Applicable over recommended operating range from: TA = -40°C to +85°C, VCC = 1.7V to 5.5V, CL = 100
pF (unless otherwise noted). Test conditions are listed in Note 2.
Symbol
Parameter
f SK
t SKL
t SKH
t CS
t CSS
t CSH
tDIS
t DIH
t PD1
t PD0
t SV
t DF
t WR
SK Clock Frequency
SK Low Time
SK High Time
Minimum CS Low
CS Setup Time
CS Hold Time
DI Setup Time
DI Hold Time
Output Delay to “1”
Output Delay to “0”
CS to Status Valid
CS to DO in High
Write Cycle
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
Endurance
(1)
1.7V ≤ Vcc ≤ 2.5V
Min
Max
2.5V < Vcc ≤ 5.5V
Min
1
Max
2
250
250
250
50
0
100
100
200
200
200
50
0
50
50
400
400
400
200
5
3.3V, 25°C
1,000,000
200
200
200
100
5
Units
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Write
Cycles
Notes: 1. This parameter is characterized and is not 100% tested.
2. AC measurement conditions:
Input pulse voltages: 0.2 VCC to 0.8 VCC
Input rise and fall times: ≤ 50 ns
Input and output timing reference voltages: 0.3 VCC ~ 0.7 VCC
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
13
Ordering Information
FM 93C DD A
-PP -C -H
Company Prefix
FM = Shanghai Fudan Microelectronics Group Co.,ltd
Product Family
93C = Three-wire Serial EEPROM
Product Density
46 = 1K-bit
56 = 2K-bit
66 = 4K-bit
Supply Voltage
A = 1.7V to 5.5V
Package Type (1)
PD = 8-pin PDIP
SO = 8-pin SOP
TS = 8-pin TSSOP
DN = 8-pin TDFN
ST = 6-pin TSOT23
Product Carrier
U = Tube
T = Tape and Reel
HSF ID Code (2)
Blank or R = RoHS Compliant
G = RoHS Compliant, Halogen-free, Antimony-free
Note:
1. For SO, TS, DN package, MSL1 package are available, for detail please contact local sales
office..
2. For PD package: R class offer only
For SO, TS, DN and ST package: G class offer only.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
14
Part Marking Scheme
PDIP8
FM93CDDA
YYWWALH
Product Density
HSF ID Code
R = RoHS Compliant
Lot Number（just with 0~9、A~Z）
Assembly’s Code
Work week during which the product was molded (eg..week 12)
The last two digits of the year In which the product was sealed / molded.
SOP8
FM93CDDA
YYWWALHM
Product Density
MSL Code
Blank = MSL3
1 = MSL1
HSF ID Code
G = RoHS Compliant, Halogen-free, Antimony-free
Lot Number（just with 0~9、A~Z）
Assembly’s Code
Work week during which the product was molded (eg..week 12)
The last two digits of the year In which the product was sealed / molded.
TSSOP8
FM93CDDA
YYWWALHM
Product Density
MSL Code
Blank = MSL3
1 = MSL1
HSF ID Code
G = RoHS Compliant, Halogen-free, Antimony-free
Lot Number（just with 0~9、A~Z）
Assembly’s Code
Work week during which the product was molded (eg..week 12)
The last two digits of the year In which the product was sealed / molded.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
15
TDFN8
3
C A
Product Density (“4”for FM93C46A; “5” for FM93C56A; “6” for FM93C66A)
A Y M
A L H
The month (hexadecimal digit) in which the product was molded.
The last one digit of year in which the product was sealed/molded
HSF ID Code
M
G = RoHS Compliant, Halogen-free, Antimony-free
Moisture Sensitivity Level
1=MSL1
Lot Number（just with 0~9、A~Z）
Assembly’s Code
TSOT23-6L
DDYMLH
HSF ID Code
G = ROHS Compliant, Halogen-free, Antimony-free
Lot Number（just with 0~9、A~Z）
The month (hexadecimal digit) in which the product was molded.
The last one digit of the year In which the product was sealed / molded.
Product Density (“4U”for FM93C46A; “5U” for FM93C56A; “6U” for FM93C66A)
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
16
Packaging Information
PDIP 8
Symbol
MIN
--A
A1
0.380
b
0.380
b2
1.300
C
0.200
D
9.000
E1
6.100
E
7.320
e
L
2.920
--eB
NOTE:
1. Dimensions are in Millimeters.
MAX
5.000
--0.570
1.700
0.360
10.000
7.000
8.250
2.540(BSC)
3.810
10.900
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
17
SOP 8
Symbol
MIN
A
1.350
A1
0.050
b
0.330
c
0.150
D
4.700
E1
3.700
E
5.800
e
L
0.400
θ
0°
NOTE:
1. Dimensions are in Millimeters.
MAX
1.750
0.250
0.510
0.260
5.150
4.100
6.200
1.270(BSC)
1.270
8°
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
18
TSSOP8
Symbol
MIN
D
2.900
E1
4.300
b
0.190
c
0.090
E
6.200
A
A1
0.050
e
L
0.450
θ
0°
NOTE:
1. Dimensions are in Millimeters.
MAX
3.100
4.500
0.300
0.200
6.600
1.200
0.150
0.650 (BSC)
0.750
8°
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
19
TDFN8
Symbol
MIN
A
0.700
A1
0.000
D
1.900
E
2.900
D2
1.400
E2
1.400
k
b
0.200
e
L
0.200
NOTE:
1. Dimensions are in Millimeters.
MAX
0.800
0.050
2.100
3.100
1.600
1.700
0.150(MIN)
0.300
0.500(TYP)
0.500
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
20
TSOT23-6L
Symbol
MIN
A
0.700
A1
0.000
b
0.350
c
0.080
D
2.820
E
1.600
E1
2.650
e
e1
L
0.300
θ
0°
NOTE:
1. Dimensions are in Millimeters.
MAX
0.900
0.100
0.500
0.200
3.020
1.700
2.950
0.950(BSC)
1.900(BSC)
0.600
8°
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
21
Revision History
Version
1.0
Publication
Pages
date
May. 2013
23
1.1
Feb. 2016
23
1.2
Aug. 2017
23
Paragraph or
Illustration
Revise Description
Initial Document Release
1. Updated “ Part Marking Scheme”
2. Updated “packaging information”
1. Updated “packaging information”
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
22
Sales and Service
Shanghai Fudan Microelectronics Group Co., Ltd.
Address: Bldg No. 4, 127 Guotai Rd,
Shanghai City China.
Postcode: 200433
Tel: (86-021) 6565 5050
Fax: (86-021) 6565 9115
Shanghai Fudan Microelectronics (HK) Co., Ltd.
Address: Unit 506, 5/F., East Ocean Centre, 98 Granville
Road, Tsimshatsui East, Kowloon, Hong Kong
Tel: (852) 2116 3288 2116 3338
Fax: (852) 2116 0882
Beijing Office
Address: Room 423, Bldg B, Gehua Building,
1 QingLong Hutong, Dongzhimen Alley north Street,
Dongcheng District, Beijing City, China.
Postcode: 100007
Tel: (86-010) 8418 6608
Fax: (86-010) 8418 6211
Shenzhen Office
Address: Room.1301, Century Bldg, No. 4002, Shengtingyuan
Hotel, Huaqiang Rd (North),
Shenzhen City, China.
Postcode: 518028
Tel: (86-0755) 8335 0911 8335 1011 8335 2011 8335 0611
Fax: (86-0755) 8335 9011
Shanghai Fudan Microelectronics (HK) Ltd Taiwan
Representative Office
Address: Unit 1225, 12F., No 252, Sec.1 Neihu Rd.,
Neihu Dist., Taipei City 114, Taiwan
Tel : (886-2) 7721 1889 (886-2) 7721 1890
Fax: (886-2) 7722 3888
Shanghai Fudan Microelectronics (HK) Ltd
Singapore Representative Office
Address : 237, Alexandra Road, #07-01 The Alexcier,
Singapore 159929
Tel : (65) 6472 3688
Fax: (65) 6472 3669
Shanghai Fudan Microelectronics Group Co., Ltd
NA Office
Address :2490 W. Ray Road Suite#2
Chandler, AZ 85224 USA
Tel : (480) 857-6500 ext 18
Web Site: http://www.fmsh.com/
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM
Ver.1.2
23
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