ESD5311N

ESD5311N Bidirectional TVS Diode for ESD Protection FEATURES:     Protects one bi-directional I/O line Low clamping voltage Low operating voltage: 5V ROHS compliant MAIN APPLICATIONS       DFN1006 Cell Phone Handsets and Accessories Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Pagers Microprocessor based equipment PIN Configuration PROTECTION SOLUTION TO MEET  IEC61000-4-2 (ESD) ±20kV (air), ±20kV (contact)  IEC61000-4-5 (Lighting) 4.0A (8/20us) MECHANICAL CHARACTERISTICS     Package DFN1006 Molding Compound Flammability Rating : UL 94V-O Quantity Per Reel : 10,000pcs Lead Finish : Lead Free Marking code：5O ABSOLUTE MAXIMUM RATINGS (TA=25ºC, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit Tstg -55 to +150 ℃ Operating junction temperature range Tj -55 to +125 ℃ Lead Soldering Temperature TL 260 (10 sec.) ℃ PPP 88 W VESD +/- 20 +/- 20 kV Storage temperature range Peak pulse power dissipation on 8/20 μs waveform ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) ZZZIX[LQVHPLFRP 3DJH  9HU ESD5311N Bidirectional TVS Diode for ESD Protection ELECTRICAL CHARACTERISTICS (TA=25℃) Parameter Symbol Reverse Working Voltage VR Reverse Breakdown Voltage VBR Reverse Leakage Current IR Peak Pulse Current Ipp Clamping Voltage VC Junction Capacitance CJ Conditions Min Typ IT = 1mA Max Units 5 V 6.0 V VR = 5V 1.0 μA t p =8/20μs 4.0 A IPP = 1.0A, tp =8/20μs 13 V IPP = 4.0A, tp =8/20μs 22 V 0.35 pF VR = 0V, f = 1MHz 0.22 RATINGS AND V-I CHARACTERISTICS CURVES Symbol Parameter VRWM Reverse Standoff Voltage IR Max Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current VC Clamping Voltage @ IPP IPP Max Peak Pulse Current RDYN Dynamic Resistance CJ Junction Capacitance PPP Peak Pulse Power ZZZIX[LQVHPLFRP IPP RDYN VC VRWM VBR IT IR VRWM VBR IR IT RDYN - VC + IPP 3DJH  9HU ESD5311N Bidirectional TVS Diode for ESD Protection RATINGS AND V-I CHARACTERISTICS CURVES (TA=25ºC, unless otherwise noted) IPP (%) IPP (%) 100% IPP；8μs 100 80 100% e-t 60 50% IPP；20μs I@30ns 40 I@60ns 20 Percent of Rated Power for IPP 0 10 20 30 t (μs) 40 10% 0 t tr=0.6ns to 1ns Fig. 1. 8/20 μs pulse waveform according to Fig. 2. ESD pulse waveform according to IEC 61000-4-5 and IEC 61643-321 IEC 61000-4-2 120 Cj (pF) 100 0.5 80 0.4 60 0.3 40 0.2 20 0.1 0 25 50 75 100 125 150 Ambient Temperature – TA ( ) 0 Fig. 3. Power Derating Curve www.fuxinsemi.com 1 2 f=1MHz；Tamb=25 3 VR (V) 4 Fig. 4. Junction Capacitance vs VR Page 3 Ver2.1 ESD5311N Bidirectional TVS Diode for ESD Protection PACKAGE MECHANICAL DATA Symbol www.fuxinsemi.com Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.350 0.450 0.014 0.018 D 0.550 0.650 0.022 0.026 E 0.950 1.050 0.037 0.041 D1 0.420 0.520 0.017 0.020 E1 0.550 0.650 0.022 0.026 L 0.270 0.370 0.011 0.015 L1 0.000 0.100 0.000 0.004 Page 4 Ver2.1