R1540N001B-TR-KE

R1540x Series High Noise Immunity 42 V Input Voltage 70 mA Voltage Tracker NO.EA-513-200728 OVERVIEW The R1540x is a voltage tracker featuring input voltage in the range of 3.5 V to 42 V. Highly accurate output voltage which attributes to CE/ADJ pin achieves successful sequence control of the integrated off-board sensor module. Strong enough not to require the circuit to avoid external electromagnetic interference (EMI) and this contributes space saving. KEY BENEFITS  Excellent noise immunity provides effective shielding against EMI.  Lower stand-by current consumption leads to energy saving of the whole system to prolong battery life.  Response to requirements for sequence control in the system with integrated sensors. • • • • • • • • KEY SPECIFICATIONS Input Voltage Range (Maximum Rating): PACKAGE 3.5 V to 42.0 V (50.0 V) Supply Current: Typ. 60 µA Standby Current: Typ. 0.1 μA Tracking Voltage Range: 2.2 V to 14 V Tracking Voltage Accuracy: ± 15 mV SOT-23-5 2.9 x 2.8 x 1.1 (mm) (−40°C ≤ Ta ≤ 105°C, V CE/ADJ = 5 V) Output Current 70 mA HSOP-8E 5.2 x 6.2 x 1.45 (mm) Ripple Rejection: Typ. 80 dB (f = 100 Hz) Protections: Thermal Shutdown, Output Current Limiting and Short-circuit Current Limiting TYPICAL APPLICATION VIN Sensor VDD CIN VDD VOUT LDO VDD VOUT R1540x MPU GND VDD VREF GND C IN : 0.1uF, C OUT : 10µF, CE/ADJ GND COUT CCE/ADJ C CE/ADJ : 0.1uF, Ceramic capacitor SELECTION GUIDE Product Name R1540N001B-TR-FE R1540S001B-E2-FE Package SOT-23-5 HSOP-8E Quantity per Reel 3,000 pcs 1,000 pcs APPLICATIONS • Off-board sensors and power supply systems for analog to digital converters (ADC) 1 R1540x NO.EA-513-200728 SELECTION GUIDE R1540x offers selectable packages corresponding to user’s purpose. Selection Guide R1540N001B-TR-FE SOT-23-5 Quantity per Reel 3,000 pcs R1540S001B-E2-FE HSOP-8E 1,000 pcs Product Name Package Pb Free Halogen Free Yes Yes Yes Yes BLOCK DIAGRAM VDD CE/ ADJ Thermal Shutdown Circuit VOUT Short Current Limit Protection GND R1540x001B Block Diagram 2 R1540x NO.EA-513-200728 PIN DESCRIPTIONS 5 4 8 Top View 7 6 5 Bottom View 5 2 7 8 2 1 *( 1 ) (mark side) 1 6 3 1 R1540N (SOT-23-5) Pin Configuration 2 3 4 4 3 R1540S (HSOP-8E) Pin Configuration 1 R1540N Pin Descriptions Pin No. Symbol Description 1 CE/ADJ Chip Enable and Adjustment Pin (Active - High) 2 GND(2) Ground Pin 3 VDD 4 VOUT Output Pin 5 GND(2) Ground Pin Input Pin R1540S Pin Descriptions Pin No. Symbol Description 1 VDD Input Pin 2 VDD Input Pin 3 NC 4 CE/ADJ Chip Enable and Adjustment Pin (Active - High) 5 GND(2) Ground Pin 6 GND(2) Ground Pin 7 NC No Contact 8 VOUT Output Pin No Contact (1) The tab on the bottom of the package is substrate potential (GND). It is recommended that this tab to be connected to the ground plane on the board. (2) The GND pins must be wired together on the board. 3 R1540x NO.EA-513-200728 INTERNAL EQUIVALENT CIRCUIT FOR EACH PIN + Driver - VOUT + - VOUT Pin Internal Equivalent Circuit Diagrams CE/ADJ CE/ADJ Pin Internal Equivalent Circuit Diagrams 4 R1540x NO.EA-513-200728 ABSOLUTE MAXIMUM RATINGS Symbol V IN Parameter Input Voltage Peak Voltage ( 1) Rating Unit −0.3 to 50 V 60 V V CE/ADJ CE/ADJ Pin Input Voltage −0.3 to 50 V V OUT VOUT Pin Output Voltage −0.3 to V IN + 0.3 ≤ 50 V I OUT Output Current 95 mA PD Power Dissipation (2) SOT-23-5 660 JEDEC STD. 51 HSOP-8E 2900 mW Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings are not assured. RECOMMENDED OPERATING CONDITIONS Symbol V IN V CE/ADJ Ta Parameter Input Voltage CE/ADJ Input Pin Voltage Operating Temperature Range Rating Unit 3.5 to 42 V 0 to 14 V −40 to 105 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such ratings by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) Duration (2) Refer time: 200 ms. to POWER DISSIPIATION for detailed information 5 R1540x NO.EA-513-200728 ELECTRICAL CHARACTERISTICS C IN = 0.1 μF, C OUT = 10 μF, V CE/ADJ = 5.0 V and V IN = 14.0 V, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at -40°C ≤ Ta ≤ 105°C. (Ta = 25°C) R1540x001B Electrical Characteristics Symbol I SS Parameter Supply Current Istandby Standby Current Conditions Min. Typ. Max. Unit V IN = 14 V, I OUT = 0 mA 60 100 μA V IN = 42 V, V CE/ADJ = 0 V 0.1 1.0 μA mV 8 V ≤ V IN ≤ 24 V 1 mA ≤ I OUT ≤ 70 mA ∆V O Tracking Voltage Accuracy V CE/ADJ = 5.0 V -15 15 V IN = 15 V 2.2 V ≤ V CE/ADJ ≤ 5.0 V -15 15 I OUT = 1 mA 5.0 V < V CE/ADJ ≤ 14.0 V -18 18 6 V ≤ V IN ≤ 42 V 1 mA ≤ I OUT ≤ 10 mA ∆V OUT /∆I OUT ∆V OUT /∆V IN ∆V OUT /∆V CE/ADJ mV Load Regulation V IN = 8 V, 1 mA ≤ I OUT ≤ 70 mA -2 2 mV Line Regulation 6 V ≤ V IN ≤ 42 V, I OUT = 1 mA -8 8 mV -1 1 mV/V 2.1 V CE/ADJ Regulation 2.2 V ≤ V CE/ADJ ≤ 14 V, I OUT = 1 mA, V IN = 15 V V DIF Dropout Voltage I OUT = 70 mA I LIM Output Current Limit V IN = 8 V 80 120 mA I SC Short Current Limit V IN = 8 V , V OUT = 0 V 20 40 mA V IN = 15 V 2.0 14 V V IN = 42 V 0 1.0 V 1.0 μA V CE/ADJH V CE/ADJL I PD T TSD T TSR CE/ADJ Pin Input Voltage, high CE/ADJ Pin Input Voltage, low CE/ADJ Pin Pull Down Current Thermal Shutdown Detection Temperature Thermal Shutdown Released Temperature 1.3 V IN = 42 V, V CE/ADJ = 2 V 0.2 Junction Temperature 150 165 °C Junction Temperature 128 135 °C All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C). 6 R1540x NO.EA-513-200728 TYPICAL APPLICATION TYPICAL APPLICATION VDD VOUT R1540x CIN COUT CE/ADJ GND CCE/ADJ CIN = Ceramic 0.1 µF COUT = Ceramic 10 µF CCE/ADJ = Ceramic 0.1 µF R1540x Typical Application TECHNICAL NOTES Phase Compensation R1540x adopts capacitance and Equivalent Series Resistance (ESR) for phase compensation to ensure stable operation even with load varying current. For this end, the capacitor of 10 μF or more is essential. A certain amount of ESR may cause unstable output voltage. Fully take temperature and frequency characteristics into consideration when evaluating the circuit. Place the capacitor of 0.1 μF or more between VDD and GND with using short leads and short printed circuit traces. PCB Layout SOT-23-5 package: connect Nos. 2 and 5 of GND pin together. HSOP-8E package: connect Nos. 5 and 6 of GND pin together. 7 R1540x NO.EA-513-200728 ESR vs. output current characteristics Using ceramic output capacitor is highly recommended although availability of another low-ESR capacitors. The mutual relations between the output current (I OUT ) causes noise under the specified value and the ESR are indicated below for reference. VDD VOUT CIN R1540x COUT CE/ADJ IOUT GND ESR CIN = Ceramic 0.1 µF COUT = Ceramic 10 µF Measurement Conditions Frequency Band: 10 Hz to 2 MHz Temperature: −40°C to 105°C Shaded portion: Noise level is 40 μV (average) or below Capacitors: C IN = 0.1 μF of Ceramic, C OUT = 10 μF of Ceramic R1540x001B 8 R1540x NO.EA-513-200728 THEORY OF OPERATION Thermal Shutdown Thermal Shutdown occurs when the device’s junction temperature reaches 165°C (Typ.) at which point the regulator will automatically shut down. Then the regulator resumes from the stand-by state when the junction temperature decreases below 135°C (Typ.). Unless the cause of overheating is eliminated, the device cycles on and off to generate pulse output. 9 R1540x NO.EA-513-200728 APPLICATION INFORMATION Typical Application for IC Chip Breakdown Prevention A sudden surge of current flowing through the VOUT pin during a short to GND leads to negative voltage due to resonance generated between the impedance of the wire and the output capacitor, C2. Consequently, large short-circuit current may destroy the IC or a load device in some types of pattern boards. It is highly recommended to connect schottky diode, D1, between VOUT pin and GND to prevent the IC from being destroyed. VOUT VDD VOUT CIN R1540x COUT D1 CE/ADJ GND CIN = Ceramic 0.1 µF COUT = Ceramic 10 µF R1540x Typical Application for IC Chip Breakdown Prevention 10 R1540x NO.EA-513-200728 Electromagnetic Noise Immunity An output voltage may linearly varies in some regulators due to electromagnetic noise. R1540x adopts the techniques on its circuits to prevent this voltage variation. The noise immunity test indicated below was conducted to confirm that R1540x is fairly robust to electromagnetic noise over a broad frequency band. DC power supply：apply V IN = 14 V, V CE/ADJ = 5 V Digital multi meter：measure the output DC voltage of R1540 Signal generator：apply high frequency signal of 150 kHz to1 GHz Power meter：measure the intensity of signal so as to sense the surface electric field intensity of 800 V/m TEM cell Power amp 50ohm termination Directional coupler Power sensor (forward) Power sensor (reflection) Digital multi meter R1540x Power meter Block Diagram for Immunity Test Based on IEC 62132-2 TEM cell EMS Characteristics (TEMcell Applied：800 V/m) V IN = 14 V, V CE/ADJ = 5 V, Surface Electric Field Intensity = 800 V/m 6 5.5 OutputVoltage VOUT [V] Signal generator DC power supply 5 4.5 4 3.5 3 0.1 1 10 100 frequency [MHz] 1000 11 R1540x NO.EA-513-200728 TYPICAL CHARACTERISTICS Typical Characteristics are intended to be used as reference data, they are not guaranteed 1) Output voltage vs Output Current C IN = Ceramic 0.1 µF, C OUT = Ceramic 10 µF, Ta = 25°C 2) Output voltage vs Input Voltage C IN = Ceramic 0.1 µF, C OUT = Ceramic 10 µF , Ta=25°C V IN = 0 V,42 V, V CE/ADJ = 5 V V IN = 0 V, 8 V, V CE/ADJ = 5 V 3) Supply Current vs Input Voltage C IN = Ceramic 0.1 µF, C OUT = Ceramic 10 µF , Ta = 25°C V IN = 0 V 42 V, V CE/ADJ = 5 V, I OUT = 0 mA 12 R1540x NO.EA-513-200728 4) Supply Current vs Temperature CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF VIN = 14 V, VCE/ADJ = 5 V, IOUT = 0 mA Supply Current Iss[uA] 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 Temperature Ta [℃] Tracking Accuracy ΔVo [mV] 5) Tracking Accuracy vs Temperature CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF VIN = 14 V, VCE/ADJ = 5 V, IOUT = 1 mA 5 4 3 2 1 0 -1 -2 -3 -4 -5 -40 -20 0 20 40 60 80 100 Temperature Ta [℃] 6) Tracking Accuracy vs Input Voltage CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta=25°C VCE/ADJ = 2 V, VIN = 3 V 42 V VCE/ADJ = 5 V, VIN = 6 V 42 V 13 R1540x NO.EA-513-200728 7) Tracking Accuracy vs Load Current CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta = 25°C VCE/ADJ = 2 V, IOUT = 1mA 70 mA VCE/ADJ = 5 V, IOUT = 1mA 70 mA 8) Tracking Accuracy vs CE/ADJ Voltage CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta = 25°C VIN = 15 V, VCE/ADJ = 2.4 V 14 V, IOUT = 1 mA 9) Dropout Voltage vs Output Current CIN = Ceramic 0.1 µF, COUT = Ceramic 10 µF, Ta=25°C VIN = 0 V 22 V, VCE/ADJ = 5 V DropOutVoltage VDIF[mV] 1400 1200 Ta=-40℃ 1000 Ta=25℃ 800 Ta=105℃ 600 400 200 0 0 10 20 30 40 50 60 70 OutputCurrent Iout [mA] 14 R1540x NO.EA-513-200728 10) Dropout Voltage vs CE/ADJ Voltage C IN = Ceramic 0.1 µF, C OUT = Ceramic 10 µF, Ta=25°C V IN = 0 V 22 V, I OUT =70 mA 11) Equivalent Series Resistance vs Output Current C IN = Ceramic 0.1 µF, C OUT = Ceramic 10µF, Ta=25°C V IN = 4 V 42 V, V CE/ADJ = 2 V Ta =-40°C / 25°C / 105°C V IN = 7 V 42 V, V CE/ADJ = 5 V Ta=-40°C / 25°C / 105°C 12) Ripple Rejection vs Input Voltage C IN = none, C OUT = Ceramic 10 µF, Ta = 25°C V IN = 5 V 15 V, V CE/ADJ = 5 V 15 R1540x NO.EA-513-200728 13) Ripple Rejection vs Frequency C IN = none, C OUT = Ceramic 10 µF, Ta = 25°C V IN = 14 V, V CE/ADJ = 2 V 14) Load Transient Response C IN = Ceramic 0.1 µF, C OUT = Ceramic 10 µF, Ta = 25°C V IN =14 V, I OUT = 1 mA 50 mA, tR = tF = 1us 15) Input Transient Response C IN = none, C OUT = Ceramic 10 µF, Ta = 25°C 16 R1540x NO.EA-513-200728 16) Turn-on Speed with CE/ADJ pin C IN = Ceramic 0.1 µF, C OUT = Ceramic 10 µF, Ta = 25°C V IN =14 V, V CE/ADJ = 0 V => 5 V 17) Turn-off Speed with CE/ADJ pin C IN = Ceramic 0.1 µF, C OUT = Ceramic 10µF, Ta = 25°C V IN =14 V, V CE/ADJ = 5 V => 0 V 18) CE/ADJ Excess/Inrush Current C IN = none, C OUT = Ceramic 10µF, Ta = 25°C V IN = 8 V, V CE/ADJ = 2.4 V => 5 V V IN = 8 V, V CE/ADJ = 5 V=> 2.4 V 17 R1540x NO.EA-513-200728 19) Load Dump C IN = Ceramic 0.1 µF, C OUT = Ceramic 10 µF, Ta = 25°C V CE/ADJ = 5 V 20) Cranking C IN = Ceramic 0.1 µF, C OUT = Ceramic 10 µF, Ta = 25°C V CE/ADJ = 5 V, I OUT = 1 mA V CE/ADJ = 5 V, I OUT = 50 mA V CE/ADJ = 5 V, I OUT = 1 mA V CE/ADJ = 5 V, I OUT = 50 mA 18 R1540x NO.EA-513-200728 Test Circuit VDD VOUT R1540x CIN COUT CE/ADJ GND CCE/ADJ CIN = Ceramic 0.1 µF COUT = Ceramic 10 µF CCE/ADJ = Ceramic 0.1 µF R1540x circuit for measuring Typical Characteristics Measurement Components of Typical Characteristics Measurement Manufacturer Symbol Capacitance item C IN 0.1 μF All TDK C OUT 10 μF All TDK Parts number CGA4J2X7R2A104K125AA CGA6P1X7R1E106K 19 POWER DISSIPATION SOT-23-5 Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.3 mm × 7 pcs (Ta = 25°C, Tjmax = 125°C) Measurement Result Item Measurement Result Power Dissipation 660 mW Thermal Resistance (θja) θja = 150°C/W Thermal Characterization Parameter (ψjt) ψjt = 51°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 800 Power Dissipation PD (mW) 700 660 600 500 400 300 200 100 0 0 25 50 75 100 105 125 Ambient Temperature (°C) Power Dissipation vs. Ambient Temperature Measurement Board Pattern i SOT-23-5 PACKAGE DIMENSIONS Ver. A 2.9±0.2 1.1±0.1 1.9±0.2 0.8±0.1 (0.95) 4 1 2 0～0.1 0.2min. +0.2 1.6-0.1 5 2.8±0.3 (0.95) 3 0.4±0.1 +0.1 0.15-0.05 SOT-23-5 Package Dimensions i POWER DISSIPATION HSOP-8E Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes  0.3 mm × 21 pcs (Ta = 25°C, Tjmax = 125°C) Measurement Result Item Measurement Result Power Dissipation 2900 mW Thermal Resistance (ja) ja = 34.5°C/W Thermal Characterization Parameter (ψjt) ψjt = 10°C/W ja: Junction-to–ambient thermal resistance. ψjt: Junction–to-top of package thermal characterization parameter 3500 2900 Power Dissipation (mW) 3000 2500 2000 1500 1000 500 0 0 25 50 75 100 105 125 Ambient Temperature (°C) Power Dissipation vs. Ambient Temperature Measurement Board Pattern i PACKAGE DIMENSIONS HSOP-8E HSOP-8E Package Dimensions i 1. 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