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R1163N501B-TR-FE

R1163N501B-TR-FE

  • 厂商:

    NISSHINBO(日清纺)

  • 封装:

    SC-74A

  • 描述:

    PMIC - 稳压器 - 线性 正 固定 1 输出 150mA SOT-23-5

  • 详情介绍
  • 数据手册
  • 价格&库存
R1163N501B-TR-FE 数据手册
R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x SERIES 3-MODE 150mA LDO REGULATOR with the Reverse Current Protection NO.EA-118-230417 OUTLINE The R1163x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy and low supply current. These ICs perform with the chip enable function and realize a standby mode with ultra low supply current. To prevent the destruction by over current, the current limit circuit is included. The R1163x Series have 3-mode. One is standby mode with CE or standby control pin. Other two modes are realized with ECO pin. Fast Transient Mode (FT mode) and Low Power Mode (LP mode) are alternative with ECO pin. Consumption current is reduced at Low Power Mode compared with Fast Transient Mode. The output voltage is maintained between FT mode and LP mode. Further, the reverse current protection circuit is built-in. Therefore, if a higher voltage than VDD pin is forced to the output pin, the reverse current to VDD pin is very small (Max. 0.1µA) , so it is suitable for backup circuit. Since the packages for these ICs are SOT-23-5, SON-6, and DFN(PL)1616-6 packages, high density mounting of the ICs on boards is possible. FEATURES • Supply Current ..................................................... Typ. 6.0µA (Low Power Mode), Typ. 70µA (Fast Transient Mode) • Standby Mode ...................................................... Typ. 0.6µA • Reverse Current ................................................... Max. 0.1µA • Input Voltage Range ............................................ 2.0V to 6.0V • Output Voltage Range.......................................... 1.5V to 5.0V (0.1V steps) (For other voltages, please refer to MARK INFORMATIONS.) • Output Voltage Accuracy...................................... ±1.5% (±2.5% at Low Power Mode) • Temperature-Drift Coefficient of Output Voltage .. Typ. ±100ppm/°C • Dropout Voltage ................................................... Typ. 0.25V (IOUT=150mA, VOUT=2.8V) • Ripple Rejection ................................................... Typ. 70dB (f=1kHz, Fast Transient Mode) • Line Regulation .................................................... Typ. 0.02%/V (Fast Transient Mode) • Packages ............................................................ DFN(PL)1616-6, SOT-23-5, SON-6 • Built-in fold-back protection circuit ....................... Typ. 40mA (Current at short mode) • Performs with Ceramic Capacitors ...................... CIN=Ceramic 1.0µF, COUT=Ceramic 0.47µF APPLICATIONS • Precision Voltage References. • Power source for electrical appliances such as cameras, VCRs and hand-held communication equipment. • Power source for battery-powered equipment. 1 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 BLOCK DIAGRAM R1163xxx1B R1163xxx1D ECO VDD ECO VOUT VDD VOUT Vref Vref Current Limit Current Limit Reverse Detector CE GND CE Reverse Detector GND R1163xxx1E ECO VDD VOUT Vref Current Limit Reverse Detector CE GND 2 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 SELECTION GUIDE The output voltage, auto discharge function, and package, etc. for the ICs can be selected at the user’s request. Product Name Package Quantity per Reel Pb Free Halogen Free DFN(PL)1616-6 5,000 pcs Yes Yes R1163Nxx1∗-TR-FE SOT-23-5 3,000 pcs Yes Yes R1163Dxx1∗-TR-FE SON-6 3,000 pcs Yes Yes R1163Kxx1∗-TR xx : The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps. (For other voltages, please refer to MARK INFORMATIONS.) ∗ : The auto discharge function at off state are options as follows. (B) without auto discharge function at off state (D) with auto discharge function at off state (E) without auto discharge function at off state, ECO logic reverse type (Low Power mode at ECO="H") 3 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 PIN CONFIGURATIONS • DFN(PL)1616-6 Top View 6 5 • SOT-23-5 Bottom View 4 4 5 5 4 • SON-6 Top View 6 5 6 Bottom View 4 4 ∗ ∗ 1 2 3 5 6 ∗ (mark side) 3 2 1 1 2 3 1 2 3 3 2 1 PIN DISCRIPTIONS • DFN(PL)1616-6 Pin No 1 2 3 4 5 6 Symbol VOUT GND ECO ECO CE NC VDD Pin Description Output pin Ground Pin R1163xxx1B/D: FT/LP Mode Alternative Pin (“L” LP) R1163xxx1E: FT/LP Mode Alternative Pin (“H” LP) Chip Enable pin ("H" Active) No Connection Input Pin ∗) Tab is GND level. (They are connected to the reverse side of this IC.) • The tab is better to be connected to the GND, but leaving it open is also acceptable. SOT-23-5 Pin No 1 2 3 4 5 • Symbol VDD GND CE ECO ECO VOUT Pin Description Input Pin Ground Pin Chip Enable Pin ("H" Active) R1163xxx1B/D: FT/LP Mode Alternative Pin (“L” LP) R1163xxx1E: FT/LP Mode Alternative Pin (“H” LP) Output pin SON-6 Pin No 1 2 3 4 5 6 Symbol VDD NC VOUT ECO ECO GND CE Pin Description Input Pin No Connection Output pin R1163xxx1B/D: FT/LP Mode Alternative Pin (“L” LP) R1163xxx1E: FT/LP Mode Alternative Pin (“H” LP) Ground Pin Chip Enable Pin ("H" Active) *) Tab suspension leads are GND level. (They are connected to the reverse side of this IC.) The tab suspension leads should be open and do not connect to other wires or land patterns. 4 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 ABSOLUTE MAXIMUM RATINGS Symbol VIN Item Input Voltage Rating Unit 6.5 V VECO Input Voltage (ECO/ECO Pin) −0.3 ~ 6.5 V VCE Input Voltage (CE Pin) −0.3 ~ 6.5 V VOUT Output Voltage −0.3 ~ 6.5 V IOUT Output Current 180 mA Power Dissipation (DFN(PL)1616-6)* 640 Power Dissipation (SOT-23-5) * 420 Power Dissipation (SON-6) * 500 PD mW Topt Operating Temperature Range −40 ~ 85 °C Tstg Storage Temperature Range −55 ~ 125 °C ∗) For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 5 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 ELECTRICAL CHARACTERISTICS R1163xxx1B/D Symbol Topt=25°C Item Conditions FT Mode VOUT Output Voltage LP Mode ∆VOUT IOUT FT Mode ∆VOUT/ ∆IOUT Load Regulation VDIF Dropout Voltage ISS1 Supply Current (FT Mode) ISS2 Supply Current (LP Mode) LP Mode Istandby Supply Current (Standby) FT Mode ∆VOUT/ ∆VIN Line Regulation LP Mode RR VIN ∆VOUT/ ∆Topt ISC IPD RPDE VCEH VCEL en RLOW IREV VIN=Set VOUT+1V, VECO=VIN 1mA < = IOUT < = 30mA VIN=Set VOUT + 1V, VECO=GND 1mA < = IOUT < = 30mA VIN=Set VOUT+1V, Output Voltage Deviation between FT Mode and LP Mode IOUT=30mA Output Current Ripple Rejection (FT Mode) Input Voltage Output Voltage Temperature Coefficient Short Current Limit CE Pull-down Current ECO Pull-down Resistance CE, ECO Input Voltage "H" CE, ECO Input Voltage "L" Output Noise "H" (FT Mode) Output Noise "L" (LP Mode) Low Output Nch Tr. ON Resistance (of D version) Reverse Current Min. Typ. Max. ×0.985 ×1.015 ×0.975 ×1.025 Unit V VOUT > 2.0V −1.2 0 1.2 % < = −24 0 24 mV VOUT 2.0V 150 VIN−VOUT=1.0V VIN=Set VOUT+1V, VECO=VIN 20 1mA < = IOUT < = 150mA VIN=Set VOUT+1V, VECO=GND 20 1mA < = IOUT < = 150mA Refer to the following table VIN=Set VOUT+1V 70 VECO=VIN VIN=Set VOUT+1V 6.0 VECO=GND VIN=Set VOUT+1V, VCE=GND 0.6 VECO=GND or VIN Set VOUT+0.5V < = VIN < = 6.0V IOUT=30mA, VECO=VIN 0.02 If VOUT < = 1.6V, then 2.2V < = VIN < = 6.0V Set VOUT + 0.5V < = VIN < = 6.0V IOUT =30mA, VECO=GND 0.05 If VOUT < = 1.6V, then 2.2V < = VIN < = 6.0V Ripple 0.2Vp-p, 70 f=1kHz VIN=Set VOUT+1V, IOUT=30mA, VECO=VIN If VOUT < = 1.7V, then 60 f=10kHz VIN=Set VOUT+1.2V 2.0 IOUT=30mA ±100 −40°C < = Topt < = 85°C 40 VOUT=0V 0.3 2 5 1.0 0 30 BW=10Hz to 100kHz 40 BW=10Hz to 100kHz VCE=0V 60 VOUT>0.5V, 0V < = VIN < = 6V 0 mA 40 mV 45 100 µA 10.0 µA 1.0 µA 0.10 %/V 0.20 dB 6.0 0.6 30 6.0 0.35 V ppm /°C mA µA MΩ V V µVrms Ω 0.1 µA 6 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 R1163xxx1E Symbol Topt=25°C Item Conditions FT Mode VOUT Output Voltage LP Mode ∆VOUT IOUT VIN=Set VOUT+1V, VOUT > 2.0V Output Voltage Deviation between FT Mode and LP Mode IOUT=30mA VOUT < = 2.0V Output Current FT Mode ∆VOUT/ ∆IOUT Load Regulation VDIF Dropout Voltage ISS1 Supply Current (FT Mode) ISS2 Supply Current (LP Mode) LP Mode Istandby Supply Current (Standby) FT Mode ∆VOUT/ ∆VIN Line Regulation LP Mode RR VIN ∆VOUT/ ∆Topt ISC IPD VCEH VCEL en IREV VIN=Set VOUT+1V, VECO=GND 1mA < = IOUT < = 30mA VIN=Set VOUT +1V, VECO=VIN 1mA < = IOUT < = 30mA Ripple Rejection (FT Mode) Input Voltage Output Voltage Temperature Coefficient Short Current Limit CE Pull-down Current CE, ECO Input Voltage "H" CE, ECO Input Voltage "L" Output Noise "H" (FT Mode) Output Noise "L" (LP Mode) Reverse Current Min. Typ. ×0.985 ×1.015 ×0.975 ×1.025 Unit V −1.2 0 1.2 % −24 0 24 mV 150 VIN−VOUT=1.0V VIN=Set VOUT+1V, VECO=GND 20 1mA < = IOUT < = 150mA VIN=Set VOUT+1V, VECO=VIN 20 1mA < = IOUT < = 150mA Refer to the following table VIN=Set VOUT+1V 70 VECO=GND VIN=Set VOUT+1V 6.0 VECO=VIN VIN=Set VOUT+1V, VCE=GND 0.6 VECO=GND or VIN Set VOUT+0.5V < = VIN < = 6.0V IOUT=30mA, VECO=GND 0.02 If VOUT < = 1.6V, then 2.2V < = VIN < = 6.0V < Set VOUT + 0.5V = VIN < = 6.0V IOUT=30mA, VECO=VIN 0.05 If VOUT < = 1.6V, then 2.2V < = VIN < = 6.0V Ripple 0.2Vp-p 70 f = 1kHz VIN=Set VOUT+1V, IOUT=30mA, VECO=GND If VOUT < 60 = 1.7V, then f = 10kHz VIN=Set VOUT+1.2V 2.0 IOUT = 30mA ±100 −40°C < = Topt < = 85°C 40 VOUT = 0V 0.3 1.0 0 BW = 10Hz to 100kHz BW = 10Hz to 100kHz VOUT>0.5V, 0V < = VIN < = 6V Max. 30 40 0 mA 40 mV 45 100 µA 10.0 µA 1.0 µA 0.10 %/V 0.20 dB 6.0 0.6 6.0 V ppm /°C mA µA V 0.4 V µVrms 0.1 µA 7 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Topt=25°C Dropout Voltage (mV) Output Voltage VOUT (V) VDIF (FT Mode) Condition Typ. 400 380 350 340 290 250 < = < = 1.5 VOUT < 1.6 1.6 VOUT < 1.7 1.7 < = VOUT < 1.8 1.8 < = VOUT < 2.0 2.0 < = VOUT < 2.8 2.8 < = VOUT < = 5.0 IOUT=150mA VDIF (LP Mode) Max. 680 550 520 490 425 350 Typ. 420 390 370 350 300 250 Max. 680 550 520 490 430 350 TYPICAL APPLICATION VDD VOUT VOUT C2 C1 R1163x Series ECO CE GND (External Components) Ex. C1: Ceramic Capacitor 1.0µF C2: Ceramic Capacitor 0.47µF Murata GRM40B474K Kyocera CM105B474K TECHNICAL NOTES When using these ICs, consider the following points: Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a 0.47µF or more ceramic capacitor C2. (Test these ICs with as same external components as ones to be used on the PCB.) When a tantalum capacitor is used with this IC, if the equivalent series resistor (ESR) of the capacitor is large, output voltage may be unstable. PCB Layout Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result. Connect a capacitor C1 with as much as 1.0µF capacitor between VDD and GND pin as close as possible. Set external components such as an output capacitor C2, as close as possible to the ICs and make wiring as short as possible. 8 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 TEST CIRCUITS VDD C1 VOUT VOUT C2 V R1163x Series GND CE IOUT ECO C1=Ceramic 1.0µF C2=Ceramic 0.47µF Basic Test Circuit VDD ISS A C1 VOUT VOUT C2 R1163x Series GND CE ECO C1=Ceramic 1.0µF C2=Ceramic 0.47µF Test Circuit for Supply Current VDD Pulse Generator P.G. VOUT C2 IOUT R1163x Series GND CE ECO C1=Ceramic 1.0µF C2=Ceramic 0.47µF Test Circuit for Ripple Rejection, Line Transient Response 9 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 VDD VOUT VOUT C2 R1163x Series C1 IOUT a IOUT b GND CE V ECO C1=Ceramic 1.0µF C2=Ceramic 0.47µF Test Circuit for Load Transient Response VDD VOUT C2 IOUT R1163x Series C1 GND CE ECO Pulse Generator P.G. C1=Ceramic 1.0µF C2=Ceramic 0.47µF Test Circuit for Output Voltage at Mode alternative point VDD VOUT C2 IOUT R1163x Series C1 GND CE ECO ∗ CE pin Input Waveform P.G. Set VOUT+1.0V Pulse Generator 0V C1=Ceramic 1.0µF C2=Ceramic 0.47µF Test Circuit for Turn On Speed with CE pin 10 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 TYPICAL CHARACTERISTICS Unless otherwise provided, capacitors are ceramic type. 1) Output Voltage vs. Output Current R1163x151x FT Mode R1163x151x LP Mode 1.6 Output Voltage L VOUTL(V) Output Voltage H VOUTH(V) 1.6 1.4 VIN=2V 1.2 1.0 0.8 VIN=2.5V • 3.5V 0.6 0.4 0.2 0.0 1.4 VIN=2V 1.2 1.0 0.8 VIN=2.5V • 3.5V 0.6 0.4 0.2 0.0 0 100 200 300 Output Current IOUT(mA) 400 0 R1163x281x FT Mode 3.0 2.5 Output Voltage L VOUTL(V) Output Voltage H VOUTH(V) 400 R1163x281x LP Mode 3.0 VIN=3.1V 2.0 VIN=3.3V 1.5 VIN=3.8V • 4.8V 1.0 0.5 0.0 2.5 VIN=3.1V 2.0 VIN=3.3V 1.5 VIN=3.8V • 4.8V 1.0 0.5 0.0 0 100 200 300 Output Current IOUT(mA) 400 0 R1163x40x FT Mode 4.5 4.5 4.0 4.0 VIN=4.3V 3.5 3.0 VIN=4.5V 2.5 VIN=5V • 6V 2.0 100 200 300 Output Current IOUT(mA) 400 R1163x40x LP Mode 1.5 1.0 0.5 0.0 Output Voltage L VOUTL(V) Output Voltage H VOUTH(V) 100 200 300 Output Current IOUT(mA) VIN=4.5V VIN=4.3V 3.5 VIN=5V • 6V 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 Output Current IOUT(mA) 400 0 100 200 300 Output Current IOUT(mA) 400 11 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 2) Output Voltage vs. Input Voltage R1163x151x FT Mode R1163x15x LP Mode 1.6 Output Voltage L VOUTL(V) Output Voltage H VOUTH(V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 IOUT=1mA IOUT=30mA IOUT=50mA 0.2 0.0 1.4 1.2 1.0 0.8 0.6 0.4 IOUT=1mA IOUT=30mA IOUT=50mA 0.2 0.0 0 1 2 3 4 Input Voltage VIN(V) 5 6 0 R1163x28x FT Mode 5 6 3.0 Output Voltage L VOUTL(V) Output Voltage H VOUTH(V) 2 3 4 Input Voltage VIN(V) R1163x28x LP Mode 3.0 2.5 2.0 1.5 1.0 IOUT=1mA IOUT=30mA IOUT=50mA 0.5 0.0 2.5 2.0 1.5 1.0 IOUT=1mA IOUT=30mA IOUT=50mA 0.5 0.0 0 1 2 3 4 Input Voltage VIN(V) 5 6 0 R1163x40x FT Mode 4.5 4.5 4.0 4.0 3.5 3.0 2.5 2.0 1.5 IOUT=1mA IOUT=30mA IOUT=50mA 1.0 0.5 1 2 3 4 Input Voltage VIN(V) 5 6 R1163x40x LP Mode Output Voltage L VOUTL(V) Output Voltage H VOUTH(V) 1 0.0 3.5 3.0 2.5 2.0 1.5 IOUT=1mA IOUT=30mA IOUT=50mA 1.0 0.5 0.0 0 1 2 3 4 Input Voltage VIN(V) 5 6 0 1 2 3 4 Input Voltage VIN(V) 5 6 12 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 3) Supply Current vs. Input Voltage R1163x151x LP Mode 8 70 7 Supply Current ISS(µA) Supply Current H ISSH(µA) R1163x151x FT Mode 80 60 50 40 30 20 10 0 6 5 4 3 2 1 0 0 1 2 3 4 Input Voltage VIN(V) 5 6 0 8 70 7 60 50 40 30 20 10 0 5 6 5 6 5 6 6 5 4 3 2 1 0 0 1 2 3 4 Input Voltage VIN(V) 5 6 0 R1163x401x FT Mode 1 2 3 4 Input Voltage VIN(V) R1163x401x LP Mode 80 8 70 7 Supply Current ISS(µA) Supply Current H ISSH(µA) 2 3 4 Input Voltage VIN(V) R1163x281x LP Mode 80 Supply Current ISS(µA) Supply Current H ISSH(µA) R1163x281x FT Mode 1 60 50 40 30 20 10 0 6 5 4 3 2 1 0 0 1 2 3 4 Input Voltage VIN(V) 5 6 0 1 2 3 4 Input Voltage VIN(V) 13 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 4) Output Voltage vs. Temperature R1163x151x FT Mode R1163x151x LP Mode 1.53 Output Voltage L VOUTL(V) Output Voltage H VOUTH(V) 1.53 1.52 1.51 1.50 1.49 1.48 1.47 1.46 250 225 0 25 50 75 Temperature Topt(°C) 1.52 1.51 1.50 1.49 1.48 1.47 1.46 250 100 R1163x281x FT Mode Output Voltage L VOUTL(V) Output Voltage H VOUTH(V) 2.81 2.80 2.79 2.78 2.77 225 0 25 50 75 Temperature Topt(°C) 2.82 2.81 2.80 2.79 2.78 2.77 2.76 250 100 R1163x401x FT Mode 225 0 25 50 75 Temperature Topt(°C) 100 R1163x401x LP Mode 4.06 Output Voltage L VOUTL(V) 4.05 Output Voltage H VOUTH(V) 100 2.83 2.82 4.04 4.03 4.02 4.01 4.00 3.99 3.98 3.97 250 0 25 50 75 Temperature Topt(°C) R1163x281x LP Mode 2.83 2.76 250 225 225 0 25 50 75 Temperature Topt(°C) 100 4.05 4.04 4.03 4.02 4.01 4.00 3.99 3.98 250 225 0 25 50 75 Temperature Topt(°C) 100 14 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 5) Supply Current vs. Temperature R1163x151x FT Mode 90 80 Supply Current ISS(µA) Supply Current H ISSH(µA) R1163x151x LP Mode VIN=2.5V 70 60 50 40 30 20 10 0 250 225 0 25 50 75 Temperature Topt(°C) 100 10 9 8 7 6 5 4 3 2 1 0 250 R1163x281x FT Mode Supply Current ISS(µA) Supply Current H ISSH(µA) 80 70 60 50 40 30 20 10 0 250 225 0 25 50 75 Temperature Topt(°C) 100 10 9 8 7 6 5 4 3 2 1 0 250 R1163x401x FT Mode Supply Current ISS(µA) Supply Current H ISSH(µA) 80 70 60 50 40 30 20 10 0 250 225 0 25 50 75 Temperature Topt(°C) 100 VIN=3.8V 225 0 25 50 75 Temperature Topt(°C) 100 R1163x401x LP Mode VIN=5.0V 90 225 R1163x281x LP Mode VIN=3.8V 90 VIN=2.5V 0 25 50 75 Temperature Topt(°C) 100 10 9 8 7 6 5 4 3 2 1 0 250 VIN=5.0V 225 0 25 50 75 Temperature Topt(°C) 100 15 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 6) Standby Current vs. Input Voltage Standby Current ISTB(μA) 2.5 Topt=85°C Topt=25°C Topt=-40°C 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 Input Voltage VIN(V) 5 6 VIN=1V 0.020 Topt=85°C 0.018 Topt=25°C 0.016 Topt=-40°C 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Output Voltage VOUT(V) VIN=0V 1.2 Topt=85°C Topt=25°C Topt=-40°C 1.0 IREV3(μA) IREV1(μA) 7) Reverse Current vs. Output Voltage 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Output Voltage VOUT(V) 8) Dropout Voltage vs. Output Current R1163x151x FT Mode R1163x151x LP Mode 0.5 Dropout Voltage L VDIF_L(V) Dropout Voltage H VDIF_H(V) 0.5 Topt=85ºC 0.4 Topt=85ºC 0.4 Topt=25ºC Topt=-40ºC 0.3 Topt=25ºC Topt=-40ºC 0.3 0.2 0.2 0.1 0.1 0 0 0 25 50 75 100 125 Output Current IOUT(mA) 150 0 25 50 75 100 125 Output Current IOUT(mA) 150 16 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 R1163x161x FT Mode R1163x161x LP Mode R1163x171x FT Mode R1163x171x LP Mode R1163x181x FT Mode R1163x181x LP Mode 17 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 R1163x211x FT Mode R1163x211x LP Mode R1163x281x FT Mode R1163x281x LP Mode R1163x401x FT Mode R1163x401x LP Mode 18 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 9) Dropout Voltage vs. Set Output Voltage R1163x FT Mode R1163x LP Mode 10) Ripple Rejection vs. Input Bias Voltage R1163x281x FT Mode R1163x281x FT Mode R1162x281x FT Mode R1162x281x FT Mode 19 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 R1163x281x FT Mode CIN=none, COUT=0.47µF, IOUT=50mA Ripple=0.2Vp2p 80 70 60 50 40 30 20 10 0 2.9 f=1kHz f=10kHz f=100kHz 3.0 3.1 3.2 Input Voltage VIN(V) 90 Ripple Rejection RR(dB) Ripple Rejection RR(dB) 90 R1163x281x FT Mode 80 70 60 50 40 30 f=1kHz f=10kHz f=100kHz 20 10 0 2.9 3.3 CIN=none, COUT=0.47µF, IOUT=50mA Ripple=0.5Vp2p 3.0 3.1 3.2 Input Voltage VIN(V) 3.3 11) Ripple Rejection vs. Frequency R1163x151x FT Mode 70 60 50 40 30 20 10 0 0.1 IOUT=1mA IOUT=30mA IOUT=50mA 1 10 Frequency f(kHz) 70 Ripple Rejection RR_L(dB) Ripple Rejection RR_H(dB) 80 R1163x151x LP Mode CIN=none, COUT=0.47µF, VIN=2.5VDC+0.2Vp2p 60 50 30 20 10 R1163x281x FT Mode 70 60 50 40 30 20 10 0 0.1 IOUT=1mA IOUT=30mA IOUT=50mA 1 10 Frequency f(kHz) 1 10 Frequency f(kHz) 100 R1163x281x LP Mode CIN=none, COUT=0.47µF, VIN=3.8VDC+0.2Vp2p 70 Ripple Rejection RR_L(dB) Ripple Rejection RR_H(dB) 80 IOUT=1mA IOUT=30mA IOUT=50mA 40 0 0.1 100 CIN=none, COUT=0.47µF, VIN=2.5VDC+0.2Vp2p 100 60 50 CIN=none, COUT=0.47µF, VIN=3.8VDC+0.2Vp2p IOUT=1mA IOUT=30mA IOUT=50mA 40 30 20 10 0 0.1 1 10 Frequency f(kHz) 100 20 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 R1163x401x FT Mode CIN=none, COUT=0.47µF, VIN=5.0VDC+0.2Vp2p 70 Ripple Rejection RR_L(dB) Ripple Rejection RR_H(dB) 80 R1163x401x LP Mode 70 60 50 40 30 20 IOUT=1mA IOUT=30mA IOUT=50mA 10 0 0.1 1 10 Frequency f(kHz) CIN=none, COUT=0.47µF, VIN=5.0VDC+0.2Vp2p IOUT=1mA IOUT=30mA IOUT=50mA 60 50 40 30 20 10 0 0.1 100 1 10 Frequency f(kHz) 100 12) Input Transient Response 3.5 3 3.0 Input Voltage 1.54 2 1.52 1 0 Output Voltage 1.48 21 1.46 22 0 10 20 30 40 50 60 70 80 90 100 Time t(µs) 2.5 2 2.0 1 1.5 1.0 4 2.88 3 2.86 Input Voltage 2.5 2 2.0 1 1.5 0 Output Voltage 1.0 21 R1163x281x FT Mode 21 0.5 22 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Time t(ms) Output Voltage VOUT(V) 3.0 0 Output Voltage 0.5 22 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Time t(ms) Input Voltage VIN(V) Output Voltage VOUT(V) 3.5 3 Input Voltage R1163x151x LP Mode CIN=none, COUT=1µF IOUT=10mA 4 2.84 CIN=none, COUT=1µF IOUT=30mA 6 5 Input Voltage 2.82 4 3 2.80 2 Output Voltage 2.78 1 2.76 0 0 10 20 30 40 50 60 70 80 90 100 Time t(µs) Input Voltage VIN(V) 1.50 Output Voltage VOUT(V) 1.56 4 Input Voltage VIN(V) Output Voltage VOUT(V) 1.58 R1163x151x LP Mode CIN=none, COUT=0.47µF IOUT=10mA Input Voltage VIN(V) R1163x151x FT Mode CIN=none, COUT=0.47µF IOUT=30mA 21 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 R1163x281x FT Mode Output Voltage VOUT(V) 4.5 6 5 Input Voltage 4.0 4 3.5 3 3.0 2 Output Voltage 2.5 1 Input Voltage VIN(V) CIN=none, COUT=1µF IOUT=10mA 5.0 2.0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Time t(ms) 13) Load Transient Response 100 50 1.6 0 1.5 250 Output Voltage 1.4 1.3 2100 2 4 6 100 Output Current 1.7 0 1.5 250 Output Voltage 1.4 8 10 12 14 16 18 20 Time t(µs) 2 30 Output Current 1.7 0 1.6 230 1.5 260 Output Voltage 1.4 1.3 290 2120 0 2 4 6 8 10 12 14 16 18 20 Time t(µs) 6 8 10 12 14 16 18 20 Time t(µs) VIN=2.5V, CIN=1µF COUT=1.0µF 1.9 60 Output Voltage VOUT(V) Output Voltage VOUT(V) 1.8 4 R1163x151x FT Mode Output Current IOUT(mA) VIN=2.5V, CIN=1µF COUT=0.47µF 2100 2150 0 R1163x151x FT Mode 1.9 50 1.6 1.3 2150 0 1.8 150 1.8 60 30 Output Current 1.7 0 1.6 230 1.5 260 Output Voltage 1.4 1.3 290 Output Current IOUT(mA) Output Current 1.7 Output Voltage VOUT(V) Output Voltage VOUT(V) 1.8 VIN=2.5V, CIN=1µF COUT=1.0µF 1.9 150 Output Current IOUT(mA) VIN=2.5V, CIN=1µF COUT=0.47µF 1.9 R1163x151x FT Mode Output Current IOUT(mA) R1163x151x FT Mode 2120 0 2 4 6 8 10 12 14 16 18 20 Time t(µs) 22 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 210 1.5 220 Output Voltage 1.4 230 10 Output Current 1.7 1.6 210 1.5 220 Output Voltage 1.4 230 1.3 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Time t(ms) 1.3 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Time t(ms) R1163x281x FT Mode R1163x281x FT Mode 3.1 100 Output Current 3.0 50 2.9 0 2.8 250 Output Voltage 2.7 2100 2 4 6 3.1 Output Current 3.0 0 2.8 250 Output Voltage 2.7 2 0 2.9 230 2.8 260 Output Voltage 2.7 2.6 290 2120 0 2 4 6 8 10 12 14 16 18 20 Time t(µs) Output Voltage VOUT(V) Output Current 6 8 10 12 14 16 18 20 Time t(µs) VIN=3.8V, CIN=1µF COUT=1µF 3.2 60 30 3.0 4 R1163x281x FT Mode Output Current IOUT(mA) 3.1 2100 2150 0 R1163x281x FT Mode 3.2 50 2.9 8 10 12 14 16 18 20 Time t(µs) VIN=3.8V, CIN=1µF COUT=0.47µF 150 100 2.6 2150 0 VIN=3.8V, CIN=1µF COUT=1µF 3.2 150 Output Voltage VOUT(V) VIN=3.8V, CIN=1µF COUT=0.47µF 2.6 Output Voltage VOUT(V) 0 Output Current IOUT(mA) 1.6 3.2 Output Voltage VOUT(V) 0 1.8 20 3.1 60 30 Output Current 3.0 0 2.9 230 2.8 260 Output Voltage 2.7 2.6 290 Output Current IOUT(mA) Output Current 1.7 Output Voltage VOUT(V) 10 Output Current IOUT(mA) Output Voltage VOUT(V) 1.8 VIN=3.8V, CIN=1µF COUT=1µF 1.9 20 Output Current IOUT(mA) VIN=2.5V, CIN=1µF COUT=0.47µF 1.9 R1163x151x LP Mode Output Current IOUT(mA) R1163x151x LP Mode 2120 0 2 4 6 8 10 12 14 16 18 20 Time t(µs) 23 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 10 Output Current 3.2 0 3.0 210 2.8 220 Output Voltage 2.6 230 2.4 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Time t(ms) Output Voltage VOUT(V) Output Voltage VOUT(V) 3.4 VIN=3.8V, CIN=1µF COUT=1µF 3.6 20 Output Current IOUT(mA) VIN=3.8V, CIN=1µF COUT=0.47µF 3.6 R1163x281x LP Mode 3.4 20 10 Output Current 3.2 0 3.0 210 2.8 220 Output Voltage 2.6 230 Output Current IOUT(mA) R1163x281x LP Mode 2.4 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Time t(ms) 14) Turn on speed with CE pin VIN=2.5V, CIN=1µF COUT=0.47µF IOUT=0mA VIN=2.5V, CIN=1µF COUT=0.47µF IOUT=0mA 3.0 2 2.5 0 2.0 21 1.5 22 Output Voltage 1.0 23 0.5 24 0.0 25 0 4 8 12 16 20 24 28 32 Time t(µs) 0 2.0 21 1.5 22 CE Input Voltage 1 24 0.0 3.0 2 2.5 2.0 21 1.5 22 1.0 Output Voltage 24 0.5 0.0 25 20.5 28 24 0 4 8 12 16 20 24 28 32 Time t(µs) 1.0 0.5 3 0 23 Output Voltage 23 3.5 CE Input Voltage VCE(V) 2 2.5 0 20 40 60 Time t(ms) 20.5 80 100 120 R1163x151x LP Mode Output Voltage VOUT(V) CE Input Voltage VCE(V) 3 CE Input Voltage 1 R1163x151x FT Mode VIN=2.5V, CIN=1µF COUT=0.47µF IOUT=30mA 3.0 25 240 220 20.5 28 24 3.5 1 VIN=2.5V, CIN=1µF COUT=0.47µF IOUT=30mA 3.5 3.0 CE Input Voltage 2.5 0 2.0 21 1.5 22 Output Voltage 1.0 23 0.5 24 0.0 Output Voltage VOUT(V) CE Input Voltage 1 3 CE Input Voltage VCE(V) 2 3.5 Output Voltage VOUT(V) R1163x151x LP Mode Output Voltage VOUT(V) CE Input Voltage VCE(V) 3 R1163x151x FT Mode 25 20.5 20.2 20.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Time t(ms) 24 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 2.0 21 1.5 1.0 22 Output Voltage 23 24 0.0 0 4 8 12 16 20 24 28 32 Time t(µs) 2.0 21 1.5 22 0.5 24 0.0 6 6 4 22 3 2 24 Output Voltage 28 1 0 210 21 220 210 0 10 20 30 40 50 60 70 80 Time t(µs) CE Input Voltage VCE(V) 7 5 2 CE Input Voltage 22 3 26 4 5 3 28 Output Voltage 28 6 22 26 2 24 6 4 2 Output Voltage 5 4 7 0 24 CE Input Voltage 1 0 R1163x281x LP Mode 1 0 210 21 220 210 0 10 20 30 40 50 60 70 80 Time t(µs) CE Input Voltage VCE(V) 2 6 210 21 220 210 0 10 20 30 40 50 60 70 80 Time t(ms) Output Voltage VOUT(V) CE Input Voltage VCE(V) 4 7 0 R1163x281x FT Mode VIN=3.8V, CIN=1µF COUT=0.47µF IOUT=30mA 1.0 23 VIN=3.8V, CIN=1µF COUT=0.47µF IOUT=0mA 4 6 Output Voltage R1163x281x LP Mode CE Input Voltage 2.5 0 VIN=3.8V, CIN=1µF COUT=0.47µF IOUT=0mA 0 26 CE Input Voltage R1163x281x FT Mode 4 2 3.0 25 20.5 20.2 20.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Time t(ms) 20.5 28 24 6 0.5 1 3.5 Output Voltage VOUT(V) 2.5 0 25 CE Input Voltage VCE(V) 2 VIN=2.5V, CIN=1µF COUT=0.47µF IOUT=150mA 2 VIN=3.8V, CIN=1µF COUT=0.47µF IOUT=30mA 7 6 CE Input Voltage 5 0 4 22 3 2 24 26 28 210 20.1 20 Output Voltage 1 0 Output Voltage VOUT(V) 1 3.0 CE Input Voltage VCE(V) CE Input Voltage 3 Output Voltage VOUT(V) 2 3.5 Output Voltage VOUT(V) CE Input Voltage VCE(V) 3 VIN=2.5V, CIN=1µF COUT=0.47µF IOUT=150mA R1163x151x LP Mode Output Voltage VOUT(V) R1163x151x FT Mode 21 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 Time t(ms) 25 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 5 0 4 22 3 2 24 26 Output Voltage 28 1 0 210 21 220 210 0 10 20 30 40 50 60 70 80 Time t(µs) CE Input Voltage 4 22 3 2 24 Output Voltage 26 28 6 7 4 6 0 5 4 24 3 Output Voltage 2 28 1 210 0 212 21 220 210 0 10 20 30 40 50 60 70 80 Time t(µs) 0 5 4 24 3 Output Voltage 26 2 CE Input Voltage 28 1 0 21 28 24 8 6 7 4 6 5 22 4 24 3 Output Voltage 0 4 8 12 16 20 24 28 32 Time t(ms) R1163x401x LP Mode 0 26 2 210 2 28 1 210 0 212 21 220 210 0 10 20 30 40 50 60 70 80 Time t(µs) CE Input Voltage VCE(V) 4 6 22 212 Output Voltage VOUT(V) CE Input Voltage VCE(V) VIN=5.0V, CIN=1µF COUT=0.47µF IOUT=30mA 8 7 CE Input Voltage 2 R1163x401x FT Mode 6 21 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 Time t(ms) VIN=5.0V, CIN=1µF COUT=0.47µF IOUT=0mA 8 1 0 R1163x401x LP Mode CE Input Voltage 5 0 VIN=5.0V, CIN=1µF COUT=0.47µF IOUT=0mA 22 26 2 R1163x401x FT Mode 4 2 6 210 20.1 20 Output Voltage VOUT(V) CE Input Voltage VCE(V) 6 7 Output Voltage VOUT(V) 4 VIN=3.8V, CIN=1µF COUT=0.47µF IOUT=150mA 2 VIN=5.0V, CIN=1µF COUT=0.47µF IOUT=30mA 8 7 CE Input Voltage 6 0 5 22 4 24 Output Voltage 3 26 2 28 1 210 212 20.1 20 0 Output Voltage VOUT(V) CE Input Voltage 6 CE Input Voltage VCE(V) 2 6 CE Input Voltage VCE(V) 4 7 Output Voltage VOUT(V) CE Input Voltage VCE(V) 6 VIN=3.8V, CIN=1µF COUT=0.47µF IOUT=150mA R1163x281x LP Mode Output Voltage VOUT(V) R1163x281x FT Mode 21 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 Time t(ms) 26 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 2 CE Input Voltage 6 7 4 6 0 5 22 4 24 26 3 Output Voltage 2 28 1 210 0 212 21 220 210 0 10 20 30 40 50 60 70 80 Time t(µs) CE Input Voltage VCE(V) 4 8 Output Voltage VOUT(V) CE Input Voltage VCE(V) 6 VIN=5.0V, CIN=1µF COUT=0.47µF IOUT=150mA R1163x401x LP Mode VIN=5.0V, CIN=1µF COUT=0.47µF IOUT=150mA 2 8 7 CE Input Voltage 6 0 5 22 4 24 26 3 Output Voltage 28 1 210 212 20.1 20 2 0 Output Voltage VOUT(V) R1163x401x FT Mode 21 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 Time t(ms) 15) Turn off speed with CE pin 1 CE Input Voltage 0 21 22 23 4 3.0 3 2.5 2.0 IOUT=0mA IOUT=30mA IOUT=150mA 24 1.5 1.0 0.5 0.0 Output Voltage 25 20.5 20.1 20 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 Time t(ms) CE Input Voltage VCE(V) 2 3.5 Output Voltage VOUT(V) CE Input Voltage VCE(V) 3 R1163x281xD 2 VIN=3.8V, CIN=1µF COUT=0.47µF 7.0 CE Input Voltage 1 22 23 24 6.0 5.0 0 21 8.0 4.0 IOUT=0mA IOUT=30mA IOUT=150mA 3.0 2.0 1.0 0.0 Output Voltage 25 21.0 20.1 20 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 Time t(ms) Output Voltage VOUT(V) R1163x151xD VIN=2.5V, CIN=1µF COUT=0.47µF R1163x401xD 6 11 5 10 4 9 CE Input Voltage 3 8 2 7 6 1 5 0 4 21 IOUT=0mA 3 22 IOUT=30mA 2 23 IOUT=150mA 1 24 25 0 21 26 Output Voltage 20.1 20 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 Time t(ms) Output Voltage VOUT(V) CE Input Voltage VCE(V) VIN=5.0V, CIN=1µF COUT=0.47µF 27 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 16) Output Voltage at Mode alternative point R1163x281B/D 2 1 0 21 IOUT=1mA 2 1 0 2.82 1.50 2.80 1.48 2.78 IOUT=10mA 1.50 1.48 1.52 IOUT=50mA 1.50 1.48 1.52 IOUT=10mA 2.80 2.78 2.82 IOUT=50mA 2.80 2.78 2.82 IOUT=100mA 2.80 1.48 2.78 IOUT=100mA 2.82 IOUT=150mA IOUT=150mA 2.80 1.48 20.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t(ms) 2.78 20.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t(ms) 1.56 3 1.55 2 1.54 1 1.53 0 1.52 21 1.51 IOUT=0mA 22 1.50 23 1.49 24 1.48 25 210 0 10 20 30 40 50 60 70 80 90 Time t(ms) Output Voltage VOUT(V) 1.50 ECO Input Voltage VECO(V) Output Voltage VOUT(V) 2.82 1.50 1.52 21 IOUT=1mA 2.86 4 2.85 3 2.84 2 2.83 1 2.82 0 2.81 IOUT=0mA 21 2.80 22 2.79 23 ECO Input Voltage VECO(V) 1.52 4 3 Output Voltage VOUT(V) Output Voltage VOUT(V) 1.52 ECO Input Voltage VECO(V) 3 VIN=3.8V, CIN=Ceramic 1.0µF, COUT=Ceramic 0.47µF ECO Input Voltage VECO(V) R1163x151B/D VIN=2.5V, CIN=Ceramic 1.0µF, COUT=Ceramic 0.47µF 2.78 24 210 0 10 20 30 40 50 60 70 80 90 Time t(ms) 28 R1163K(DFN(PL)1616-6) is the NRND product as of April,2023 R1163x NO.EA-118-230417 TECHNICAL NOTES When using these ICs, consider the following points: In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance) in the range described as follows: The relations between IOUT (Output Current) and ESR of Output Capacitor are shown below. The conditions when the white noise level is under 40µV (Avg.) are marked as the hatched area in the graph. (1) Frequency band: 10Hz to 2MHz R1163x151x FT Mode 100 Topt=240°C 10 ESR(Ω) 1 VIN=2.0V to 6.0V, CIN=1µF COUT=0.47µF 100 Topt=85°C Topt=25°C 10 ESR(Ω) R1163x151x LP Mode VIN=2.0V to 6.0V, CIN=1µF COUT=0.47µF 0.1 1 0.1 0.01 0.01 0 20 40 60 80 100 120 140 Load Current IOUT(mA) 0 R1163x281x FT Mode Topt=85°C 10 ESR(Ω) ESR(Ω) 1 0.1 VIN=3.1V to 6.0V, CIN=1µF COUT=0.47µF 100 Topt=25°C Topt=240°C 10 40 60 80 100 120 140 Load Current IOUT(mA) R1163x281x LP Mode VIN=3.1V to 6.0V, CIN=1µF COUT=0.47µF 100 20 1 0.1 0.01 0.01 0 20 40 60 80 100 120 140 Load Current IOUT(mA) 0 20 40 60 80 100 120 140 Load Current IOUT(mA) 29 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. This product and any technical information relating thereto are subject to complementary export controls (so-called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us. • Aerospace Equipment • Equipment Used in the Deep Sea • Power Generator Control Equipment (nuclear, steam, hydraulic, etc.) • Life Maintenance Medical Equipment • Fire Alarms / Intruder Detectors • Vehicle Control Equipment (automotive, airplane, railroad, ship, etc.) • Various Safety Devices • Traffic control system • Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. Anti-radiation design is not implemented in the products described in this document. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/
R1163N501B-TR-FE
物料型号: R1163K(DFN(PL)1616-6)

器件简介: R1163x系列是采用CMOS技术的低压差线性稳压器,具有高输出电压精度和低供电电流。这些集成电路具备使能芯片功能,能够实现超低供电电流的待机模式。为了防止过流损坏,内置了电流限制电路。R1163x系列具有3种模式,包括通过CE或待机控制引脚实现的待机模式,以及通过ECO引脚实现的快速瞬态模式(FT模式)和低功耗模式(LP模式)。

引脚分配: - 1: VoD - 输入引脚 - 2: GND - 地引脚 - 3: CE - 芯片使能引脚(高电平有效) - 4: ECO - 模式选择引脚(R1163xxx1B/D: 低电平选择LP模式, R1163xxx1E: 高电平选择LP模式) - 5: VOUT - 输出引脚

参数特性: - 供电电流: 典型值6.0µA(低功耗模式), 典型值70µA(快速瞬态模式) - 输出电压精度: 典型值±2%(快速瞬态模式) - 内置限流保护电路: 典型值40mA(短路模式下的电流) - 可与陶瓷电容配合使用: CIN=1.0µF, COUT=0.47µF

功能详解: - 该器件具备3种工作模式,包括通过CE引脚或待机控制引脚实现的待机模式,以及通过ECO引脚选择的快速瞬态模式和低功耗模式。在低功耗模式下,消耗的电流更少,但输出电压在两种模式下保持不变。 - 内置反向电流保护电路,如果输出引脚上施加了高于VDD引脚的电压,流向VDD引脚的反向电流非常小(最大0.1µA),适合用于备份电路。

应用信息: - 精密电压参考源 - 相机、录像机、手持通信设备等电器的电源 - 电池供电设备的电源

封装信息: 提供SOT-23-5、SON-6和DFN(PL)1616-6等封装形式,可以实现IC在电路板上的高密度安装。
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