SM8S33CA

SM8S10(C)A thru SM8S43(C)A Stand-off Voltage - 10 to 43 Volts Surface Mount Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions Features • Round chip produced by chemical method • Junction passivated by polyimide • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional and bi-directional polarity • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C DO-218AB • AEC-Q101 qualified MECHANICAL DATA TYPICAL APPLICATIONS Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...) Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per Polarity: heatsink is anode Package: DO-218AB Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Parameter Peak pulse power dissipation with 10/1000 μs waveform with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Symbol PPPM Value 6600 5200 Unit W PD 8.0 W IPPM (1) See next table A Peak forward surge current 8.3 ms single half sine-wave IFSM 700 A Typical thermal resistance, junction to case RJC 0.90 °C/W TJ, TSTG -55 to +175 °C Peak pulse current with 10/1000 μs waveform Operating junction and storage temperature range Note (1) Non-repetitive current pulse derated above T = 25 °C A DN:T21702A0 http://www.microdiode.com Rev:2021A0 Page :1 SM8S10(C)A thru SM8S43(C)A Stand-off Voltage - 10 to 43 Volts ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR (V) DEVICE TYPE TEST STAND-OFF CURRENT IT VOLTAGE MAXIMUM REVERSE AT VWM ID (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) MAX. PEAK PULSE CURRENT AT 10/1000 μs WAVEFORM (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) LEAKAGE TYPICAL TEMP. COEFFICIENT OF VBR (1) T (%/°C) (mA) VWM (V) 12.3 5.0 10.0 15 250 388 17.0 0.069 12.9 13.5 5.0 11.0 10 150 363 18.2 0.072 13.3 14.0 14.7 5.0 12.0 10 150 332 19.9 0.074 SM8S13CA 14.4 15.2 15.9 5.0 13.0 10 150 307 21.5 0.076 SM8S14A SM8S14CA 15.6 16.4 17.2 5.0 14.0 10 150 284 23.2 0.078 SM8S15A SM8S15CA 16.7 17.6 18.5 5.0 15.0 10 150 270 24.4 0.080 SM8S16A SM8S16CA 17.8 18.8 19.7 5.0 16.0 10 150 254 26.0 0.081 SM8S17A SM8S17CA 18.9 19.9 20.9 5.0 17.0 10 150 239 27.6 0.082 SM8S18A SM8S18CA 20.0 21.1 22.1 5.0 18.0 10 150 226 29.2 0.083 SM8S20A SM8S20CA 22.2 23.4 24.5 5.0 20.0 10 150 204 32.4 0.085 SM8S22A SM8S22CA 24.4 25.7 26.9 5.0 22.0 10 150 186 35.5 0.086 SM8S24A SM8S24CA 26.7 28.1 29.5 5.0 24.0 10 150 170 38.9 0.087 SM8S26A SM8S26CA 28.9 30.4 31.9 5.0 26.0 10 150 157 42.1 0.088 SM8S28A SM8S28CA 31.1 32.8 34.4 5.0 28.0 10 150 145 45.4 0.089 SM8S30A SM8S30CA 33.3 35.1 36.8 5.0 30.0 10 150 136 48.4 0.090 SM8S33A SM8S33CA 36.7 38.7 40.6 5.0 33.0 10 150 124 53.3 0.091 SM8S36A SM8S36CA 40.0 42.1 44.2 5.0 36.0 10 150 114 58.1 0.091 SM8S40A SM8S40CA 44.4 46.8 49.1 5.0 40.0 10 150 102 64.5 0.092 SM8S43A SM8S43CA 47.8 50.3 52.8 5.0 43.0 10 150 95.1 69.4 0.093 Uni. Bi. MIN. NOM. MAX. SM8S10A SM8S10CA 11.1 11.7 SM8S11A SM8S11CA 12.2 SM8S12A SM8S12CA SM8S13A Notes • For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (1) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25)) http://www.microdiode.com Rev:2021A0 Page :2 SM8S10(C)A thru SM8S43(C)A Stand-off Voltage - 10 to 43 Volts RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 Reverse Surge Power (W) Power Dissipation (W) 8.0 6.0 4.0 2.0 1000 0 50 0 150 100 200 Pulse Width (ms) - ½ IPP Exponential Waveform Fig. 1 - Power Derating Curve Fig. 4 - Reverse Power Capability 100 Transient Thermal Impedance (°C/W) 6000 Load Dump Power (W) 5000 4000 3000 2000 1000 0 50 25 75 100 150 125 RθJA 10 RθJC 1 0.1 0.01 0.01 175 0.1 1 10 100 Case Temperature (°C) t - Pulse Width (s) Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Fig. 5 - Typical Transient Thermal Impedance tr = 10 μs 100 000 TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM Peak Value IPPM CJ - Junction Capacitance (pF) 150 Input Peak Pulse Current (%) 100 10 Case Temperature (°C) 100 Half Value - IPP IPPM 2 50 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Measured at Zero Bias 10 000 Measured at Stand-Off Voltage VWM td 0 1000 0 10 20 30 40 10 15 20 25 30 35 40 t - Time (ms) VWM - Reverse Stand-Off Voltage (V) Fig. 3 - Pulse Waveform Fig. 6 - Typical Junction Capacitance http://www.microdiode.com Rev:2021A0 45 Page :3 SM8S10(C)A thru SM8S43(C)A Stand-off Voltage - 10 to 43 Volts PACKAGE OUTLINE DIMENSIONS (millimeters) DO-218AB Mounting Pad Layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) SM8S 2.600 http://www.microdiode.com PACKAGE DO-218 BASE QUANTITY NA DELIVERY MODE According to customer's requirement Rev:2021A0 Page :4