SI2319A

UMW R UMW SI2319A SOT-23 Plastic-Encapsulate MOSFETS Features VDS (V) = -40V SOT–23 RDS(ON) 70m (VGS = 10V) ，ID = -4.4A RDS(ON) 95m (VGS = 4.5V) ，ID = -3.5A 1. GATE 2. SOURCE 3. DRAIN Equivalent Circuit Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current ID -4.4 Pu lsed Di od e C urren IDM -12 Continuous Source-Drain Current(Diode Conduction) IS -1. 25 Power Dissipation PD 1.25 W RthJF 166 ℃ /W TJ 150 ℃ TSTG -55 ~+15 0 ℃ V Thermal Resistance from Junction to Ambient (t?5s) Operating Junction Storage Temperature www.umw-ic.com 1 A 友台半导体有限公司 UMW R UMW SI2319A SOT-23 Plastic-Encapsulate MOSFETS MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0V, ID = -250µA -40 VGS(th) VDS =VGS, ID = -250µA -1 Gate-source leakage IGSS Zero gate voltage drain current IDSS Typ Max Unit Static Drain-source breakdown voltage Gate-source threshold voltage Drain-source on-state resistancea Forward transconductancea Diode forward voltage V -3 V VDS =0V, VGS = ±20V ±100 nA VDS = -40V, VGS =0V -1 µA VGS = -10V, ID = -4.4A 70 mΩ VGS = -4.5V, ID = -3.5A 95 mΩ RDS(on) gfs VDS = -5V, ID = -3A 7 VSD IS= -1.25A, VGS=0V -0.8 S -1.25 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance VDS = -20V, VGS =0V, f=1MHz VDS = -20V, VGS = 10V, ID = -3A f=1MHz Rg 470 pF 85 pF 65 pF 11.5 17 nC 1.8 nC 3.3 nC 9 ? Switchingb Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDS=-20V RL=20? , ID = -1A, VGEN=-4.5 V,Rg=6? tf 7 15 ns 15 25 ns 25 40 ns 25 42 ns -1.25 A -20 A Drain-source body diode characteristics Continuous Source-Drain Diode Current Pulsed Diode forward Curren IS Tc=25℃ ISM Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW SI2319A SOT-23 Plastic-Encapsulate MOSFETS TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS www.umw-ic.com 3 友台半导体有限公司 UMW R UMW SI2319A SOT-23 Plastic-Encapsulate MOSFETS TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS www.umw-ic.com 4 友台半导体有限公司 UMW R UMW SI2319A SOT-23 Plastic-Encapsulate MOSFETS TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS www.umw-ic.com 5 友台半导体有限公司 UMW R UMW SI2319A SOT-23 Plastic-Encapsulate MOSFETS Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° Marking A19 U Ordering information Order code Package Baseqty Deliverymode UMW SI2319 SOT-23 3000 Tape and reel www.umw-ic.com 6 友台半导体有限公司