ESD5B5VL

UMW R ESD5B5VL Descriptions The ESD5B5VL is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components that may be subjected to ESD Pin1 Pin2 (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. It is particularly well-suited for cellular phones, portable device, digital cameras, power supplies and many Circuit diagram other portable applications because of its small package and low weight. The ESD5B5VL may be used to provide ESD protection up to ±8kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 3.5A (8/20μs) according to IEC61000-4-5. The ESD5B5VL is available in SOD-523 package. Standard products are Pb-free and Halogen-free. Features Applications  Stand-off voltage: ±5V Max  Cell phone handsets and accessories  Transient protection for each line according to  Personal Digital Assistants (PDAs) IEC61000-4-2 (ESD): ±8kV (contact discharge)  Notebooks, Desktops, and Serves IEC61000-4-4 (EFT): 40A (5/50ns)  Portable Instrumentation IEC61000-4-5 (surge): 3.5A (8/20μs)  Digital Cameras  Capacitance: CJ = 5pF typ.  MP3/MP4/PMP Players  Solid-state silicon technology www.umw-ic.com 1 UTD Semiconductor Co.,Limited UMW R ESD5B5VL Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 50 W Peak pulse current (tp = 8/20μs) IPP 3.5 A ESD according to IEC61000-4-2 air discharge ±15 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature kV ±8 TSTG 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25°C, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Condition Min. Typ. VRWM = 5V Max. Unit ±5 V 1 uA Reveres breakdown voltage VBR12 IT=1mA 6.5 7.7 8.1 V Forward voltage VBR21 IF=1mA 6.5 7.8 8.1 V Clamping voltage VCL Clamping voltage VC Junction capacitance www.umw-ic.com VESD = 8kV 20 V Ipp=1A tp=8/20us 10 V Ipp=3.5A tp=8/20us 14 V VR = 0V, f = 1MHz 5.0 10 pF VR =5V, f = 1MHz 2.5 5 pF CJ 2 UTD Semiconductor Co.,Limited UMW R ESD5B5VL Typical characteristics (TA=25oC, unless otherwise noted) Current (%) Peak pulse current (%) 100 90 Front time: T1= 1.25 × T = 8µs Time to half-value: T2= 20µs 100 90 50 T2 10 0 0 10 20 T T1 tr = 0.7~1ns VC - Clamping voltage (V) C - Junction capacitance (pF) Pulse waveform: tp = 8/20µs 14 13 12 Pin2 to Pin1 11 10 9 Pin1 to Pin2 8 7 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 15 t 60ns 30ns Time (µs) 5.0 Fsignal =1MHz 4.5 Vsignal =50mVrms 4.0 3.5 3.0 2.5 0 1 2 3 IPP - Peak pulse current (A) 4 -5 Clamping voltage vs. Peak pulse current -4 -3 -2 -1 0 1 2 3 VR - Reverse voltage (V) 4 5 Capacitance vs. Reverse voltage 1000 100 % of Rated power Peak pulse power (W) 100 10 80 60 40 20 1 0 1 10 100 Pulse time (µs) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time www.umw-ic.com 0 Power derating vs. Ambient temperature 3 UTD Semiconductor Co.,Limited UMW R ESD5B5VL ESD clamping ESD clamping (-8kV contact discharge per IEC61000-4-2) (+8kV contact discharge per IEC61000-4-2) www.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R ESD5B5VL Package outline dimensions SOD-523 D -X-Y2 1 E DIMENSIONS SYMBOL b 2x 0.08 (0.0032) A b C D E HE L Y X A C HE L MILLIMETER INCHES MIN MAX MIN MAX 0.50 0.25 0.07 1.10 0.70 1.50 0.15 0.70 0.35 0.20 1.30 0.90 1.70 0.25 0.020 0.010 0.0028 0.043 0.028 0.059 0.006 0.028 0.014 0.0079 0.051 0.035 0.067 0.010 Marking Ordering information Order code UMW ESD5B5VL www.umw-ic.com Baseqty Package 3000 SOD-523 5 Delivery mode Tape and reel UTD Semiconductor Co.,Limited