SS510

SS52-520 SERIES SCHOTTKY SMB SS52 Plastic-Encapsulate Schottky Barrier Diode THRU SS520 SMB ROHS FEATURES DO-214AA The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals 0.155(3.94) 0.130(3.3) 0.087 (2.21) 0.070 (1.80) 0.177(4.50) 0.157(3.99) 0.012(0.305) 0.006(0.152) MECHANICAL DATA 0.12(3.1) 0.11(2.82) 0.060(1.52) 0.030(0.76) Case: JEDEC DO-214AA molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.005 ounce, 0.138 grams 0.008(0.203)MAX. 0.222(5.66) 0.194(4.93) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS SS52 SS53 SS54 SS55 SS56 SS58 SS510 SS515 SS520 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range VRRM VRMS VDC 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 56 80 100 70 100 150 105 150 200 140 200 UNITS VOLTS VOLTS VOLTS I(AV) 5.0 Amps IFSM 150.0 Amps VF 0.45 IR CJ RqJA TJ, TSTG 0.55 20 800 -65 to +125 0.85 0.70 0.5 10 500 55.0 -65 to +150 -65 to +150 Volts mA pF C/W C C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.4x0.4”(10x10mm) copper pad areas Rev 8: Nov 2014 www.born-tw.com Page 1 of 2 SS52-520 SERIES SCHOTTKY SMB SS52 Plastic-Encapsulate Schottky Barrier Diode THRU SS520 AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG. 1- FORWARD CURRENT DERATING CURVE 4 Single Phase Half Wave 60Hz Resistive or inductive Load 3 2 SS52-SS54 SS55-SS520 1 0 0 25 50 75 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 £PEAK FORWARD SURGE CURRENT, AMPERES 5 100 125 150 120 90 60 30 175 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 1 10 AMBIENT TEMPERATURE, C FIG. 4-TYPICAL REVERSE CHARACTERISTICS FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1,000 1 TJ=25 C PULSE WIDTH=300 ms 1%DUTY CYCLE 0.1 SS52-SS54 SS55-SS56 SS58-SS520 0.2 0.4 0.6 0.8 1.0 1.1 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES 10 0.01 TJ=100 C 100 TJ=75 C 10 1 TJ=25 C 0.1 0.01 INSTANTANEOUS FORWARD VOLEAGE, VOLTS 0 FIG. 5-TYPICAL JUNCTION CAPACITANCE TJ=25 C 100 SS52-SS54 SS55-SS520 10 60 80 100 100 10 1 0.1 0.01 10 1.0 40 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, C/W 1000 0.1 20 PERCENT OF PEAK REVERSE VOLTAGE,% 2000 JUNCTION CAPACITANCE, pF 100 NUMBER OF CYCLES AT 60 Hz 20 0.1 1 10 100 100 REVERSE VOLTAGE,VOLTS Rev 8: Nov 2014 ROHS www.born-tw.com t,PULSE DURATION,sec. Page 2 of 2