9926B

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9926B N-Channel Enhancement Mode Power MOSFET SOP-8L Description D2 D2 D1 The 9926B uses advanced trench technology to provide D1 excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Pin 1 SO-8 G2 S2 G G1 S S1 S S Equivalen t Cir cu it General Features D1 D2 PRODUCT SUMMARY VDSS ID RDS(on) (mΩ) Max 6.5A 22 @ VGS = 4.5V 5.5A 30 @ VGS = 2.5V G1 G2 P S1 20V S2 MARKING 9926B P ● High power and current handing capability TFCYWP ● Lead free product is acquired o ● Surface mount package Y :year code W :week code Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain TA=25°C Current B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C www.sztuofeng.com ID 6.5 IDM 30 Units V V A 2 PD TA=70°C Maximum 20 ±10 W 1.2 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State Page 1 RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W v1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9926B Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID= 250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS= 16V, V GS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS=±10V VDS=VGS ID= 250µA VGS= 4.5V, V DS= 5V RDS(ON) Static Drain-Source On-Resistance gFS VSD IS Min Typ Max Units 20 V 500 nA ±100 0.65 1.0 nA V A VGS= 4.5V, I D= 6.5A 18 22 mΩ VGS= 2.5V, ID= 5.5A 25 30 mΩ 1.2 3 S V A VDS= 15V, I D = 6.5A Forward Transconductance Diode Forward Voltage IS= 3A,V GS=0V Maximum Body-Diode Continuous Current 0.5 20 9 0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Rg Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=30V, f=1MHz 931 60 pF pF 50 pF Ω VGS=0V, VDS=0V, f=1MHz 9.5 SWITCHING PARAMETERS Qg (4.5V) Total Gate Charge (4.50V) Qg (2.5V) Total Gate Charge (2.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 13 VDD= 15V, V GEN = 4.5V, I D = 6A VDD= 15V, V GEN = 4.5V, RL=15 Ω , RGEN=6Ω IF= 5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF= 5A, dI/dt=100A/µs 11 3.2 3.5 nC nC nC nC 24 40 50 20 23.5 13.4 ns ns ns ns ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. www.sztuofeng.com Page 2 v1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9926B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 2.5V 4.5V 20 2V 25 12 15 ID(A) ID (A) 20 VDS=5V 16 VDS=16V, VGS=0V VGS=1.5V 8 10 125°C 4 5 0 0 0 1 2 3 4 5 0.4 0.8 1.2 1.6 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 45 2.4 1.8 Normalized On-Resistance 40 VGS=1.8V 35 RDS(ON) (mΩ) 25°C 30 VGS=2.5V 25 20 VGS=4.5V 15 10 ID=6.5A 1.6 VGS=4.5V 1.4 1.2 VGS=2.5V VGS=1.8V 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 1.0E+00 50 125°C ID=6.5A IS (A) RDS(ON) (mΩ) 1.0E-01 40 125°C 30 25°C 1.0E-02 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage www.sztuofeng.com Page 3 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics v1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9926B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1800 5 VDS=15V ID=6.5A 1600 VGS (Volts) VDS=16V, VGS=0V 3 2 1400 Capacitance (pF) 4 1200 Ciss 1000 800 600 Coss 400 1 Crss 200 0 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 100µs TJ(Max)=150°C TA=25°C 10µs 30 1ms Power (W) ID (Amps) 20 40 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 0.1 1 0 0.001 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 20 10 10s 0.1 ZθJA Normalized Transient Thermal Resistance 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.sztuofeng.com Page 4 v1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9926B SOP-8 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° www.sztuofeng.com Page 5 v1.0