TF2300

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS MOSFET IC SMD Type TF2300 TF2300 N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.025Ω@ 10V 20V 0.032Ω@ 4.5V 3 1.GATE 6.0 A 2.SOURCE 0.040Ω@ 2.5V 1 General FEATURE 3.DRAIN 2 Equivalent Circuit MARKING ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package C009T w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS Drain-Current -Continuous * TJ=125 -Pulsed Power Dissipation * Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range * Surface Mounted on FR 4 Board ,t www.sztuofeng.com V 10 ID 6.0 A IDM 20 A PD 1.25 W RthJA 100 Tj.Tstg -55 to 150 /W 10 sec. 1 Feb,2018 V1.0 1 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SMD Type SOT-23 Plastic-Encapsulate MOSFETS MOSFET IC TF2300 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage VDSS VGS=0V,ID=250uA Zero Gate Voltage Drain Current IDSS VDS=16V,VGS=0V 1 uA Gate-Body Leakage IGSS VGS= 10V,VDS=0V 100 nA 0.78 1.0 V 21 25 m RDS(ON) VGS=4.5V,ID=3.0A 28 32 m VGS=2.5V,ID=2.0A 35 40 m Gate Threshold Voltage * VGS(th) VGS=VDS,ID=250uA 20 0.5 VGS=10.0V,ID=6.0A Drain- Source on-state Resistance * On-State Drain Current * ID(ON) Forward Transconductance * gFS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time V VDS=5V,VGS=4.5V 5 A VDS=15V,ID=6A 30 S 888 pF 144 pF CRSS 115 pF tD(on) 31.8 ns 14.5 ns 50.3 ns tr tD(off) VDS = 15V, VGS = 0V,f =1.0MHZ VDD=10V,ID=1A,VGS=4.5V,RL=10 ,RGEN=6 Fall Time tf 31.9 ns Total Gate Charge Qg 16.8 nC Gate-S ource Charge Qgs 2.5 nC Gate-Drain Charge Qgd 5.4 nC Drain-Source Diode Forward Current * Diode Forward Voltage VDS = 10V, ID = 3.5A,VGS = 4.5V IS VSD VGS=0V,IS=1.25A 1.25 A 1.3 V 0.825 * Pulse Test:Pulse Width 300 ,Duty Cycle 2% www.sztuofeng.com 2 2 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2300 Typical Characteristics Output Characteristics Transfer Characteristics 20 20 15 ID-Drain Current (A) ID-Drain Current (A) VGS=3,4.5,6,7,8V V GS=2V 10 VGS=1.5V 5 15 10 TJ=25°C 5 TJ=-55°C TJ=125°C V GS=1V 0 0 1 2 3 4 5 6 7 8 9 0 0.0 10 VDS - Drain-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) 1.00 0.75 0.50 0.25 0 25 50 75 2.5 0.6 0.5 VGS=2.5V 0.4 VGS=4.5V 0.3 0.2 0.1 0.0 100 125 150 Tj - Junction Temperature (°C) www.sztuofeng.com 2.0 0.7 IDS=250uA -25 1.5 On-Resistance vs. Drain Current 1.25 0.00 -50 1.0 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 0.5 0 2 4 6 8 ID - Drain Current (A) 3 Feb,2018 V1.0 10 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2300 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 2.00 ID=6A 0.08 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.09 On-Resistance vs. Junction Temperature 0.07 0.06 0.05 0.04 0.03 0.02 VGS=10V 1.75 ID=6A 1.50 1.25 1.00 0.75 0.50 0.25 0 1 2 3 4 5 6 7 0.00 -50 8 VGS - Gate-to-Source Voltage (V) -25 0 6 4 2 Ciss 500 375 250 Coss Crss 125 2 4 6 8 10 12 14 16 0 18 QG - Gate Charge (nC) www.sztuofeng.com 100 125 150 Frequency=1MHz 625 Capacitance (pF) VGS-Gate-Source Voltage (V) 750 VDS=10V ID=6A 0 75 Capacitance 8 0 50 TJ - Junction Temperature (°C) Gate Charge 10 25 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 4 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2300 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 14 20 10 TJ=150°C Power (W) IS-Source Current (A) 12 10 TJ=25°C 8 6 4 2 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 VSD -Source-to-Drain Voltage (V) 1 10 100 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) www.sztuofeng.com 5 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2300 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.sztuofeng.com 6 Feb,2018 V1.0