WSD4066DN33

WSD4066DN Dual N-Ch MOSFET Product Summery General Description The WSD4066DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 17mΩ 14A Applications The WSD4066DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. • High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA • Networking DC-DC Power System Features • Load Switch • Advanced high cell density Trench technology DFN3.3x3.3-8-EP Pin Configuration • Super Low Gate Charge • Excellent CdV/dt effect decline • 100% EAS Guaranteed • Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature 150 °C TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current ID Continuous Drain Current IDM a Pulse Drain Current Tested PD Maximum Power Dissipation -55 to 150 TA=25°C 2 TA=25°C 14 TA=70°C 9.8 TA=25°C 28 TA=25°C 2.5 TA=70°C 1.68 A A W Thermal Resistance-Junction to Lead RJ A Thermal Resistance-Junction to Ambient IAS c Avalanche Current, Single pulse L=0.5mH 10 A Avalanche Energy, Single pulse L=0.5mH 25 mJ EAS 10 A RJL c Steady State °C t 10s Steady State 42.5 b 75 °C/W °C/W Note a：Pulse width limited by max. junction temperature. Note b：Surface Mounted on 1in2 pad area, t =999sec. Note c：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).  www.winsok.tw Page 1 Dec.2014 WSD4066DN Dual N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit 40 - - V - - 1 - - 30 1.0 1.5 2.0 V nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS=0V, IDS=250A VDS=32V, VGS=0V TJ=85°C A VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 VGS=10V, IDS=14A - 14 17 VGS=4.5V, IDS=12 A - 17 20 ISD=1A, VGS=0V - 0.75 1.1 V - 13 - ns - 8.7 - nC - 2.5 -  - 815 - - 95 - - 60 - - 7.8 - - 6.9 - - 22.4 - - 4.8 - - 15.7 22 - 7.5 10.5 - 1.85 - - 3.24 - - 2.75 - R DS(ON) c Drain-Source On-state Resistance m Diode Characteristics VSD c Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics d RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td( OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=20V, Frequency=1.0MHz VDD =20V, RL=20, IDS=1A, VGEN=10V, RG=6 Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge Qg Total Gate Charge Qgth IDS=6A, dlSD /dt=100A/s pF ns d Threshold Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=20V, VGS=10V, IDS=6A VDS=20V, VGS=4.5V, IDS=6A nC Note c：Pulse test ; pulse width300s, duty cyc le2%. Note d：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Dec.2014 WSD4066DN Dual N-Ch MOSFET Typical Operating Characteristics Drain Current Power Dissipation 3.0 16 14 2.5 ID - Drain Current (A) Ptot - Power (W) 12 2.0 1.5 1.0 10 8 6 4 0.5 2 o o 0.0 TA=25 C 0 20 40 60 80 0 100 120 140 160 Tj - Junction Temperature (°C) 1ms 10ms 0.1 1s 100ms TA=25 C 0.01 0.01 DC 0.1 1 10 Normalized Transient Thermal Resistance im it R ds (o n) L ID - Drain Current (A) 300ms o 40 60 80 100 120 140 160 2 Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 100 300 Mounted on 1in pad o RqJA :110 C/W 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) www.winsok.tw 20 Thermal Transient Impedance 100 1 0 Tj - Junction Temperature (°C) Safe Operation Area 10 TA=25 C,VG=10V Page 3 Dec.2014 WSD4066DN Dual N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 30 30 VGS=4,5,6,7,8,9,10V ID - Drain Current (A) RDS(ON) - On - Resistance (mW) 3.5V 25 20 15 10 3V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 Gate-Source On Resistance Gate Threshold Voltage 60 50 40 30 20 10 3 4 5 6 7 8 9 IDS =250mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) www.winsok.tw 30 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mW) 10 ID - Drain Current (A) IDS=6A 2 VGS=10V 15 5 3.0 VGS=4.5V 20 VDS - Drain - Source Voltage (V) 70 0 25 Page 4 Dec.2014 WSD4066DN Dual N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance 2.0 30 VGS = 10V IDS = 6A 10 1.6 IS - Source Current (A) Normalized On Resistance 1.8 Source-Drain Diode Forward 1.4 1.2 1.0 0.8 0.6 o Tj=150 C o Tj=25 C 1 0.4 o 0.2 -50 -25 RON@Tj=25 C: 17mW 0 25 50 75 1.0 1.2 Gate Charge VDS=20V 9 I =6A DS VGS - Gate-source Voltage (V) 600 400 200 Coss 10 15 20 8 7 6 5 4 3 2 1 Crss 5 1.4 10 Ciss 800 25 30 35 0 0 40 2 4 6 8 10 12 14 16 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.winsok.tw 0.8 0.6 Capacitance Frequency=1MHz 0 0.4 VSD - Source - Drain Voltage (V) 1000 0 0.2 Tj - Junction Temperature (°C) 1200 C - Capacitance (pF) 0.1 0.0 100 125 150 Page 5 Dec.2014 WSD4066DN Dual N-Ch MOSFET www.winsok.tw Page 6 Dec.2014 Attention  1, Any and all Winsok power products described or contained herein do not have specifications that can handle  applications that require extremely high levels of reliability, such as life‐support systems, aircraft's control systems, or  other applications whose failure can be reasonably expected to result in serious physical and/or material damage.  Consult with your Winsok power representative nearest you before using any Winsok power products described or  contained herein in such applications.  2,Winsok power assumes no responsibility for equipment failures that result from using products at values that exceed,  even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in  products specifications of any and all Winsok power products described or contained herein.  3, Specifications of any and all Winsok power products described or contained herein stipulate the performance,  characteristics, and functions of the described products in the independent state, and are not guarantees of the  performance, characteristics, and functions of the described products as mounted in the customer’s products or  equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always  evaluate and test devices mounted in the customer’s products or equipment.  4, Winsok power Semiconductor CO., LTD. strives to supply high‐quality high‐reliability products. However, any and all  semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents  or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other  property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such  measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,  and structural design.  5,In the event that any or all Winsok power products(including technical data, services) described or contained herein are  controlled under any of applicable local export control laws and regulations, such products must not be exported without  obtaining the export license from the authorities concerned in accordance with the above law.  6, No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,  including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior  written permission of Winsok power Semiconductor CO., LTD.  7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for  volume production. Winsok power believes information herein is accurate and reliable, but no guarantees are made or  implied regarding its use or any infringements of intellectual property rights or other rights of third parties.  8, Any and all information described or contained herein are subject to change without notice due to product/technology  improvement,etc. When designing equipment, refer to the "Delivery Specification" for the Winsok power product that you  Intend to use.  9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change without  notice.