650V/40A, SiC Schottky Barrier Diode
H3S065J040 Datasheet
Product Summary
H3S065J040
Part Number
Package
Marking
H3S065J040
TO-247-2L
H3S065J040
VR
650V
IF(110/136°C) 56A/40A
QC
120nC
Features
◼
◼
◼
◼
◼
◼
◼
◼
Circuit Diagram
Low Conduction and Switching Loss
Zero Reverse Recovery
Temperature Independent Switching Behavior
Positive Temperature Coefficient Device
High Surge Current Capability
RoHS Compliant and Halogen Free
Optimized for High Power Application
AEC-Q101 Qualified
PIN 2
PIN 1
Case
2
1
Benefits
Applications
◼
◼
◼
◼
◼
◼
◼
◼
◼
◼
◼
◼
Higher System Efficiency
Increase Parallel Device Convenience
Enable High Temperature Application
Allow High Frequency Operation
Realize Compact and Lightweight Systems
High Reliability
Switching Mode Power Supply
PFC
UPS
Motor Drives
Flywheel diode in Power Inverters
Solar/Wind Renewable Energy
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
c
Parameter
Symbol
Test Conditions
Value
Unit
Peak Repetitive Reverse Voltage
Peak Reverse Surge Voltage
DC Blocking Voltage
VRRM
VRSM
VR
IF
Non-Repetitive Peak Forward
Surge Current
IFSM
650
650
650
92
56
40
292
>200*
1813
V
V
V
Continuous Forward Current
(Per Leg/Per Device)
Repetitive Peak Forward Surge
Current
IFRM
Power Dissipation
PD
I2t value
Junction & Storage Temperature
Soldering Temperature
Mounting Torque
∫i2dt
Tj , Tstg
TL
MD
TJ = 25°C
TJ = 25°C
TJ = 25°C
TC = 25°C
TC = 110°C
TC = 136°C
TC = 25°C, TP = 10 ms, Half Sine Wave
TC = 125°C, TP = 10 ms, Half Sine Wave
TC = 25°C, TP = 10 μs, Pulse
TC = 25°C, TP = 10 ms
Half Sine Wave, D = 0.1
TC = 125°C, TP = 10 ms
Half Sine Wave, D = 0.1
TC=25°C
TC=125°C
TC = 25°C, TP = 10 ms
M3 or 6-32 screw
A
A
210
A
178
263
88
426
-55 to 175
260
1.0
W
A2s
°C
Nm
* Limited by equipment
Rev. Preliminary 0.2
Dec. 2021
1
www.hestia-power.com
650V/40A, SiC Schottky Barrier Diode
H3S065J040 Datasheet
Electrical Characteristics (T = 25°C unless otherwise specified)
c
Parameter
Symbol
Test Conditions
DC Blocking Voltage
VDC
Forward Voltage
VF
Reverse Current
IR
Total Capacitive Charge
QC
Total Capacitance
Cj
Capacitance Stored Energy
EC
IR = 500 μA, TJ = 25°C
IF = 40A, TJ = 25°C
IF = 40A, TJ = 175°C
VR = 650V, TJ = 25°C
VR = 650V, TJ = 175°C
IF = 30A, dI/dt = 300A/μs,
VR = 400V, TJ = 25°C
VR = 0.1V, TJ=25°C, f = 1 MHz
VR = 200V, TJ=25°C, f = 1 MHz
VR = 400V, TJ=25°C, f = 1 MHz
VR = 400V
Min.
> 650
Typ.
1.45
1.65
6
80
Max.
1.7
1.9
300
1000
120
Unit
V
V
V
μA
μA
nC
2497
233
191
24
pF
μJ
Thermal Resistance
Parameter
Symbol
Thermal Resistance, Junction to Case
Rθ,JC
Naming Rule
Min.
Typ.
0.57
Max.
Unit
°C/W
H3 S 065 J 040
Generation
H3 = 3rd Gen Discrete
Device Type
S = JBS diode (High Power)
D = JBS diode (High Speed)
Breakdown Voltage
065 = 650V
120 = 1200V
170 = 1700V
Package
A = TO-220-2L
F = TO-247-3L
J = TO-247-2L
Typical Current Rating
012 = 12A
016 = 16A
020 = 20A
030 = 30A
040 = 40A
Recommended Solder Pad Layout
TO-247-2L
10.88
Rev. Preliminary 0.2
Dec. 2021
2
www.hestia-power.com
650V/40A, SiC Schottky Barrier Diode
H3S065J040 Datasheet
Typical Device Performance
80
5.0E-04
Tj=25°C
Tj=25°C
Tj=75°C
Tj=125°C
Reverse Current, IR (A)
Forward Current, IF (A)
Tj=75°C
4.0E-04
Tj=125°C
60
Tj=175°C
Tj=175°C
3.0E-04
40
2.0E-04
20
1.0E-04
0
0.0E+00
0
0.5
1
1.5
2
2.5
0
200
Forward Voltage, VF (V)
Fig.1
Forward Characteristics
Fig.2
Cj Stored Energy, EC (J)
Capacitance, Cj (F)
1.E-08
1.E-09
Conditions:
Tc=25°C
VAC=25mV
f: 1MHz
1.E-10
800
1000
Reverse Characteristics
4.0E-05
3.0E-05
2.0E-05
Conditions:
Tc=25°C
VAC=25mV
f: 1MHz
1.0E-05
0.0E+00
0.1
1
10
100
1000
0
100
Reverse Voltage, VR (V)
200
300
400
500
600
Reverse Voltage, VR (V)
Junction Capacitance vs. Reverse Voltage
Fig.4
2.0E-07
Capacitance Stored Energy
1.E+04
Non-Repetitive Surge Current, IFSM
(A)
Cj Capacitive Charge, QC (C)
600
5.0E-05
1.E-07
Fig.3
400
Reverse Voltage, VR (V)
1.6E-07
25°C
125°C
1.E+03
1.2E-07
8.0E-08
1.E+02
Conditions:
Tc=25°C
VAC=25mV
f: 1MHz
4.0E-08
1.E+01
1.00E-06
0.0E+00
0
100
200
300
400
500
600
Reverse Voltage, VR (V)
Fig.5
Recovery Charge vs. Reverse Voltage
Rev. Preliminary 0.2
Dec. 2021
Conditions:
Tc=25°C
1.00E-05
1.00E-04
1.00E-03
Pulse Width, TP (sec)
Fig.6
3
Non-Repetitive Peak Forward Surge
Current (Pulse Mode)
www.hestia-power.com
650V/40A, SiC Schottky Barrier Diode
H3S065J040 Datasheet
Typical Device Performance
300
300
DC
Max Power Dissipation, PD (W)
Peak Forward Current, IF (A)
DC
Duty=70%
250
Duty=50%
Duty=30%
200
Duty=20%
Duty=10%
150
100
50
0
250
200
150
100
50
0
0
25
50
75
100
125
150
175
0
Case Temperature, Tc (°C)
Fig.7
25
50
75
100
125
150
175
Case Temperature, Tc (°C)
Maximum Forward Current Derating vs.
Case Temperature
Fig.8
Maximum Power Dissipation Derating vs.
Case Temperature
Thermal Impedance, Zth(j-c) (K/W)
1.E+01
1.E+00
D=0.8
D=0.5
D=0.3
D=0.1
D=0.05
D=0.02
D=0.01
Single Pusle
1.E-01
1.E-02
1.E-03
1.E-04
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Pulse time, tPW (sec)
Fig.9
Transient Junction to Case Thermal Impedance
Rev. Preliminary 0.2
Dec. 2021
4
www.hestia-power.com
650V/40A, SiC Schottky Barrier Diode
H3S065J040 Datasheet
Package Dimensions (TO-247-2L)
Symbol
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
D2
E
E1
E2
e
L
L1
𝝓P
𝝓P1
Q
S
Min.
4.83
2.29
1.50
1.12
1.12
1.91
1.91
0.55
0.55
20.80
16.25
0.51
15.75
13.46
4.32
19.81
4.10
3.56
5.39
6.04
mm
Typ.
5.02
2.41
2.00
1.20
1.20
2.00
2.00
0.60
0.60
20.95
16.55
1.19
15.94
14.02
4.91
5.44 BSC
20.07
4.19
3.61
7.19 REF.
5.79
6.17
Max.
5.21
2.55
2.49
1.33
1.28
2.39
2.34
0.69
0.65
21.10
17.65
1.35
16.13
14.16
5.49
20.32
4.40
3.65
Note
6
6
4
5
4
5
3
6
7
6.20
6.30
The information provided herein is subject to change without notice.
Rev. Preliminary 0.2
Dec. 2021
5
www.hestia-power.com